JPS60179747A - Light receiving member - Google Patents

Abstract

PURPOSE:To prevent the occurrence of interferential striped patterns in the course of picture forming method using a coherent light, such as laser light, etc., by setting the interface of each photosensitive layer in non-parallel with each other when a light receiving layer of a multilayer constitution composed of more than one photosensitive layers is formed on a supporting body having an uneven shape which is finer and smoother than the resolution required by a device along the inclined surface of the unevenness. CONSTITUTION:Since advancing directions of the reflecting light R1 and outgoing light R2 of an incident light I0 are different from each other as shown in Fig. (A) when the interface 703 between the 1st and 2nd layers 701 and 702 and the free surface 704 of the 2nd layer 702 are not parallel with each other, the degree of interference decreases as compared with the case where the interface 703 and free surface 704 are parallel with each other shown in Fig. (B). Therefore, as shown in Fig. (C), the difference between the bright part and dark part of the interferential striped pattern produced at the time of interference is minimized to a negligible degree when the pair of interfaces are not parallel with each other (A), as compared with the case where they are parallel with each other (B). As a result, the quantity light made incident on minute parts is averaged. Moreover, it is desirable to apply the spiral structure of a sine function type projection to the smooth unevenness provided on the surface of supporting body.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a light-receiving member that is sensitive to electromagnetic waves such as light (here, light in a broad sense is ultraviolet rays, indicating visible light, infrared rays, X-rays, γ-rays, etc.). More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light. As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm). In particular, as a light-receiving member for electrophotography that is suitable when using a semiconductor laser, it has a much better consistency in the photosensitivity region than other types of light-receiving members, and also has a Vickers hardness. For example, JP-A-54-88341 and JP-A-58-
A light-receiving member having a photosensitive layer made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-SiJ) disclosed in Japanese Patent No. 8374Ei is attracting attention. However, if the photosensitive layer is made of a single-layer A-Si layer, it will maintain its high photosensitivity while also achieving the 1 required for electrophotography.
In order to ensure a dark resistance of 0.012 Ωcm or more, it is necessary to structurally contain hydrogen atoms, halogen atoms, or, in addition to these, poron atoms in a specific amount range in a controlled manner in the layer. There are considerable limitations on the latitude in the design of the light-receiving member, such as the need to strictly control layer formation. For example, Japanese Patent Laid-Open No. 54-121743 is an example of a system that can expand this design tolerance and make effective use of high light sensitivity even if the dark resistance is low to some extent.
No. 1, JP-A-57-4053, JP-A-57-4
As described in Japanese Patent Publication No. 172, the photoreceptive layer may have a layer structure of two or more layers having different conductivity characteristics, and a depletion layer may be formed inside the photoreceptive layer, or
No. 52178, No. 52179, No. 52180, No. 5
As described in Publications No. 8159, No. 58180, and No. 581Ei1, the photoreceptive layer has a multilayer structure in which a barrier layer is provided between the support and the photosensitive layer and/or on the upper surface of the photosensitive layer. For this reason, light-receiving members with apparently increased dark resistance have been proposed. Through such proposals, A-Si light-receiving members have made dramatic progress in terms of commercialization design tolerances, ease of manufacturing management, and productivity, and are moving toward commercialization. The speed of development is accelerating. When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a possibility that each of the reflected lights may cause interference. This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects. Particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly. Furthermore, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photosensitive layer decreases, so the above-mentioned interference phenomenon becomes remarkable. This point will be explained with reference to the drawings. FIG. 1 shows light 10 incident on a certain layer constituting the light-receiving layer of a light-receiving member and reflected light R1 reflected at the upper interface 102.
, shows reflected light R2 reflected at the lower interface 101. If the average layer thickness of the layer is d, the refractive index is n, and the wavelength of the light is nonuniform due to the difference in layer thickness, then the reflected lights R1 and R2 enter 2nd = m (m is an integer, in this case, the reflected light is strong and the reflection is The amount of light absorbed and transmitted by a certain layer changes depending on which of the following conditions (light weakens each other) is met. In a light-receiving member having a multilayer structure, the interference effect shown in FIG. 1 occurs in each layer, and the mutual interference causes a synergistic adverse effect as shown in FIG. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed onto the transfer member, causing a defective image. As a method for solving this problem, the surface of the support is diamond-cut to provide unevenness of ±500 to ±10,000 to form a light scattering surface.
8-182El? No. 5) The surface of the aluminum support is treated with black alumite, or carbon or carbon is added to the resin.
A method of providing a light absorbing layer by dispersing colored pigments or dyes (for example, Japanese Patent Application Laid-open No. 57-185845), applying a satin-like alumite treatment to the surface of an aluminum support, or forming fine grain-like irregularities by sandblasting. A method has been proposed in which a light scattering and antireflection layer is provided on the surface of a support (for example, Japanese Patent Application Laid-Open No. 16554/1983). With these conventional methods, it was not possible to completely eliminate the interference fringe pattern appearing on the image. In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still exists, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot expands due to the light scattering effect on the support surface (so-called (blurring phenomenon) was a factor that substantially reduced resolution. In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment dispersed resin layer is provided, when forming the A-3i photosensitive layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed photosensitive layer is significantly deteriorated. 3
It is damaged by the plasma during the formation of the i photosensitive layer, reducing its original absorption function, and has disadvantages such as deterioration of the surface condition, which adversely affects the subsequent formation of the A-Si photosensitive layer. In the case of the third method of irregularly roughening the surface of the support, as shown in FIG. 3, for example, when the weight of the incident light is 0, a part of it is reflected by the surface of the light-receiving layer 302 and becomes reflected light R1, The rest,
The light enters the light receiving layer 302 and becomes transmitted light 11. A portion of the transmitted light (1) is scattered on the surface of the support 302 and becomes diffused light (1). 2. 3φ..., the rest is specularly reflected and becomes reflected light R2, and a part of it becomes emitted light R3 and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern cannot be completely erased. Furthermore, if the diffusivity of the surface of the support pair 801 is increased in order to prevent interference and multiple reflections inside the light-receiving layer, the resolution decreases because light is diffused within the light-receiving layer and causes halation. There was also the drawback of doing so. In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
The reflected light R2 on the surface of the layer 402, the reflected light R1 on the surface of the second layer 403, and the regularly reflected light R3 on the surface of the support 401 interfere with each other to form an interference fringe pattern according to the thickness of each layer of the light receiving member. occurs. Therefore, in a multilayer light-receiving member, it is impossible to completely prevent interference fringes by irregularly roughening the surface of the support 401. Furthermore, when the surface of the support is irregularly roughened by a method such as sandblasting, the degree of roughness varies greatly between lots, and even within the same lot, the degree of roughness is uneven. There was a problem with manufacturing management. In addition, relatively large protrusions are frequently formed randomly, and such large protrusions cause local electrical breakdown of the photoreceptive layer. 5. If the support surface 501 is simply roughened regularly, the fifth
As shown in the figure, the light-receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501.
The sloped surface 503 of the unevenness and the sloped surface 504 of the unevenness of the light-receiving layer 502- are parallel to each other. Therefore, in that part, the incident light satisfies 2ndt = m incidence or 2nd+ = (m-1-34) incidence, and becomes a bright part or a dark part, respectively. In addition, in the entire photoreceptive layer, the layer thickness of the photoreceptive layer is d1. d2. Due to the non-uniformity of d3 and d4, a bright and dark striped pattern appears. Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes. Furthermore, even when a multi-layered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the surface of the support as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference due to the reflected light at the interface between each layer is added, so that the degree of interference fringe pattern development becomes more complicated than that of a light-receiving member with a single-layer structure. It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks. Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing. Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development. The light-receiving member of the present invention is a light-receiving member having a multi-layered light-receiving layer having at least one photosensitive layer on a support, wherein the light-receiving layer is composed of a fluorine atom, a carbon atom, or a nitrogen atom. Contains at least one type of atom selected from S,
and the photosensitive layer has one or more pairs of non-parallel interfaces within a short range, a large number of the non-parallel interfaces are arranged in at least one direction in a plane perpendicular to the layer thickness direction, and the non-parallel interfaces are They are characterized by being smoothly connected to each other in the arrangement direction. Hereinafter, the present invention will be specifically explained with reference to the drawings. FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention. The present invention includes a multilayer photoreceptive layer having one or more photosensitive layers on a support (not shown) having irregularities that are finer and smoother than the required resolution of the apparatus, and along the slope of the irregularities. is shown as an enlarged portion of Figure $6. As shown in FIG. 6, the layer thickness of the second layer 602 is from d5 to d6.
Since the interface 603 and the interface 60 change continuously,
4 and have a tendency toward each other. Therefore, the coherent light incident on this minute portion (short range) causes interference in the minute portion, producing a minute interference fringe pattern. Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R1 and the emitted light R3 for the light IO are different from each other, when the interfaces 703 and 704 are parallel (r
(B) The degree of interference is reduced compared to J). Therefore, as shown in Fig. 7 (C), interference occurs when a pair of interfaces are non-parallel (r (A) J) than when they are parallel (r (B)''). The difference in brightness of the striped pattern becomes negligible. As a result, the amount of light incident on the minute portions is averaged. As shown in Fig. 6, the same can be said even if the layer thickness of the second layer B02 is macroscopically nonuniform (dy # da ), so the amount of incident light becomes uniform in the entire layer area. (See r(D)J in Figure 6). Furthermore, to describe the effects of the present invention in the case where coherent light is transmitted from the irradiation side to the second layer when the light-receiving layer has a multilayer structure, as shown in FIG. For IO, there are reflected lights R1, R2, R3, R4, and R5. In the ninth layer, what has been described above similar to FIG. 7 occurs. Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer.According to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it. Further, interference fringes generated within a minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it will not cause any substantial trouble because it is below the resolution of the eye. In the present invention, the uneven inclined surface is desirably mirror-finished in order to reliably align the reflected light in one direction. If the spot diameter of the irradiation light is L, it is desirable that the size of the minute portion (one period of the uneven shape) suitable for the present invention be ≦. By designing in this way, the diffraction effect can be actively utilized, and the appearance of interference fringes can be further suppressed. In addition, in order to more effectively achieve the purpose of the present invention, it is desirable that the difference in layer thickness (ds ds ) in minute portions is as follows, where the wavelength of the irradiation light is taken as input (see Figure 6). ). In the present invention, at least any two layer interfaces are in a nonparallel relationship within the layer thickness of a minute portion of a multilayered photoreceptive layer (hereinafter referred to as a "microcolumn"). The layer thickness of each layer is controlled within the microcolumn when forming each layer, but any two layer interfaces may be in a parallel relationship within the microcolumn as long as this condition is satisfied. However, it is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness in the four regions so that the difference in layer thickness at any two positions is as follows. In order to more effectively and easily achieve the object of the present invention, the layer thickness is adjusted to form each layer such as a photosensitive layer, a charge injection prevention layer, and a barrier layer made of an electrically insulating material, which constitute the photoreceptive layer. Plasma vapor phase method (P
(CVD method), optical CVD method, and thermal CVD method. The smooth unevenness provided on the surface of the support can be achieved by fixing a cutting tool having an arc-shaped cutting edge in a predetermined position on a cutting machine such as a milling machine or lathe, and rotating the cylindrical support according to a program designed in advance according to the desired results. However, by regularly moving in a predetermined direction, the surface of the support can be accurately cut to form a desired smooth uneven shape, pitch, and depth. The sinusoidal shadow line-shaped protrusion created by the unevenness formed by such a cutting method has a spiral pattern centered on the central axis of the cylindrical support. The spiral structure of the sinusoidal expansion protrusion may be a double or triple spiral structure, or a crossed spiral structure. Alternatively, a linear structure along the central axis may be introduced in addition to the spiral structure. In the present invention, each dimension of the smooth irregularities provided on the surface of the support in a controlled manner is set in such a way that the purpose of the present invention can be achieved as a result, taking into consideration the following points. . That is, first, the A-9i layer constituting the photosensitive layer is structurally sensitive to the surface condition 1 on which the layer is formed, and the layer quality changes greatly depending on the surface condition. Therefore, it is necessary to set the dimensions of the smooth irregularities provided on the surface of the support so as not to cause deterioration in the layer quality of the a-5i photosensitive layer. Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to completely clean it after image formation. Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly. After considering the above-mentioned problems in layer deposition, process problems in electrophotography, and conditions for preventing interference fringes, we found that:
The pitch of the four parts on the surface of the support is preferably 500 gm ~
0.3pm, more preferably 200pm to 17pm,
Optimally, 50 pL, m-5 gm is desirable. Further, the maximum depth of the recess is preferably O, lBm to 5 g.
m, more preferably 0.3pm-3pm. The optimum range is 0.8 pm to 27 pm. When the pitch and maximum depth of the recesses on the support surface are within the above range, the slope of the slope connecting the minimum and maximum points of the adjacent recesses and projections is preferably between 1 degree and 1 degree. It is desirable that the angle is 20 degrees, more preferably 3 degrees to 15 degrees, most preferably 4 degrees to 10 degrees. Further, the maximum difference in layer thickness due to the non-uniformity of the layer thickness of each layer deposited on such a support is preferably 0 within the same pitch.
．． 1 g m to 2 g m, more preferably 0.1 g
, m ~1.5gm, optimally 0.2gm ~ Igm. Next, specific examples of the multilayered light receiving member according to the present invention will be shown. A light-receiving member 900 shown in FIG. 9 has a light-receiving layer 902 on a support 901 whose surface is machined to achieve the object of the present invention.
It is composed of a charge injection prevention layer 903 and a photosensitive layer 904 from the side. The support 801 may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr, Steer L/S, AI, Cr, No, Au, Nb
. Examples include metals such as Ta, V, Ti, Pt, and Pd, or alloys thereof. Polyester is used as the electrically insulating support. Films or sheets of synthetic resins such as polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride, polystyrene, polyamide, glass, ceramic, paper, etc. are usually used. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side. For example, if it is glass, NiCr is applied to its surface. AI, Cr, Mo, Au, Nb, Ta,
V, Ti, Pt. Pd, ln2C)+, S+102. ITO(In2
()++5nO2), etc., or if it is a synthetic resin film such as a polyester film, NlCr, AI, Ag
, Pd', Zn. Ni, Au, Cr, Mo, Ir, Nb, T
A thin film of metal such as a, V, Ti, Pt, etc. is vacuum evaporated or electron beam evaporated. Conductivity is imparted to the surface by sputtering or the like, or by laminating the surface with the metal. The shape of the support may be any shape such as a cylinder, a belt, or a plate, and the shape is determined as desired. For example, the light receiving member 800 in FIG. If used as a member for continuous copying, it is desirable to have an endless belt shape or a cylindrical shape. The thickness of the support is determined appropriately so that the desired light-receiving member is formed. However, if flexibility is required as a light-receiving member, the thickness of the support may not be sufficiently exerted. It is made as thin as possible within the range. However, in such a case, from the viewpoint of manufacturing and handling of the support, mechanical strength, etc., it is preferable to use 10. This is considered to be the above. The charge injection prevention layer 803 is attached to the support 90 to the photosensitive layer 904.
This is provided for the purpose of preventing charge injection from the first side and increasing the apparent resistance. Charge injection prevention layer [3 is A-3i (hereinafter rA -3i (H) containing hydrogen atoms or/and halogen atoms (X)
, X) J) and contains a substance (C) that controls conductivity. The substance (C) that controls conductivity contained in the charge injection prevention layer 903 can be impurities known in the semiconductor field. Examples include a p-type impurity that provides a p-type impurity, and an n-type impurity that provides an n-type conductivity. Specifically, (aluminum), Ga(
(gallium), In (indium), TQ (thallium), etc. (particularly preferred elements), sb (antimony),
Bi (bismuth), etc., and particularly preferably used are P and As. In the present invention, the content of the substance (C) that controls conductivity contained in the charge injection prevention layer 903 is determined according to the required charge injection prevention property or when the charge injection prevention layer 903 is formed on the support 801. When provided in direct contact with the support 901, it can be appropriately selected depending on the organic relationship, such as the relationship with the characteristics at the contact interface with the support 901. In addition, the characteristics of other layer regions provided in direct contact with the charge injection prevention layer and the relationship with the characteristics at the contact interface with the other layer regions are also taken into consideration, and the material that controls the conduction characteristics is selected. The content of (C) is appropriately selected. In the present invention, the content of the substance (C) that controls conductivity contained in the charge injection prevention layer is preferably 0.
001-5 X 10' atomIc ppm. More preferably, 0.5-l x 10' atomic
ppm, optimally 1-5 x 103103ato
It is desirable to set it as ppm. In the present invention, the material (
The content of C) is preferably 30 atomic ppm
more preferably 50 atomic ppm or more,
Optimally, by setting the content to 100,100 ato ppm or more, the effects described below can be more significantly obtained. For example, when the substance (C) to be contained is the p-type impurity described above, when the free surface of the photoreceptive layer is charged to e-polarity, the movement of electrons injected from the support side into the photosensitive layer is suppressed. In addition, when the substance (C) to be contained is the above-mentioned n-type impurity, when the free surface of the photoreceptive layer is charged to e-polarity, The movement of holes injected into the photosensitive layer can be more effectively prevented. The thickness of the charge injection prevention layer 803 is preferably 30 to
+0 IJ, more preferably 40 people to 8 Ii, optimally 50 people to 5 Ii. The photosensitive layer 804 is made of A-9i (H, The layer thickness of the photosensitive layer 904 is preferably 1 to 100
m', more preferably from 1 to 80 m, optimally from 2 to 5
It is desirable to set it to 0 pLm. The photosensitive layer 904 may contain a substance controlling conduction characteristics of a polarity different from the polarity of the substance controlling conduction characteristics contained in the charge injection prevention layer 803, or a substance having conduction characteristics of the same polarity. If the actual amount of the substance controlling the charge injection prevention layer 903 is large, it may be contained in an amount much smaller than the amount. In such a case, the content of the substance controlling the conduction properties contained in the photosensitive layer 904 may be determined as desired depending on the polarity and content of the substance contained in the charge injection prevention layer 903. However, it is preferably 0.001 to 1001000 atomic ppm, more preferably 0.05 to 500 atomicPPffl+optimally 0.1 to 200 atomic ppm. In the present invention, the charge injection prevention layer 803 and the photosensitive layer 80
When the same kind of substance that controls conductivity is contained in the photosensitive layer 804, the content in the photosensitive layer 804 is preferably 3.
It is desirable that the content be less than 0 ato old c ppm. In the present invention, the charge injection prevention layer 903 and the photosensitive layer 90
The amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in 4, or the sum of the amounts of hydrogen atoms and halogen atoms (H+
X) is preferably 1 to 4° atomic%, more preferably 5 to 30 atomic%. Examples of the halogen atom (X) include F, [J, Br. (2), and among these, F and α are preferred. In the light receiving member shown in FIG. 9, the charge injection prevention layer 80
3, a so-called barrier layer made of an electrically insulating material may be provided, or the barrier layer and the charge injection prevention layer 903 may be provided.
There is no shame in using it in combination with. As the material for forming the barrier layer, Ag2O3,5i02°Si
Examples include inorganic electrical insulating materials such as 2N4 and organic electrical insulating materials such as polycarbonate. In the light-receiving member of the present invention, for the purpose of increasing photosensitivity and dark resistance, and further improving the adhesion between the support and the light-receiving layer, the light-receiving layer is It contains at least one type of atom selected from oxygen atoms, carbon atoms, and nitrogen atoms. Such atoms (OCN) contained in the photoreceptive layer may be contained in the entire layer area of the photoreceptive layer without any scratches, or may be contained only in a part of the layer area of the photoreceptive layer. It may be unevenly distributed. As for the distribution state of oxygen atoms, it is desirable that the distribution concentration C (OCN) is uniform in the layer thickness direction of the photoreceptive layer and in a plane parallel to the surface of the support. In the present invention, atoms (OCN) provided in the photoreceptive layer
When the main purpose is to improve photosensitivity and dark resistance, the layer area (OCN) containing OCN is provided so as to occupy the entire layer area of the photoreceptive layer, and the area between the support and the photoreceptive layer is When the main purpose is to strengthen the adhesion between layers, it is provided so as to occupy the end layer region of the light-receiving layer on the side of the support. In the former case, the atoms (O
It is desirable that the content of CN) be relatively low in order to maintain high photosensitivity, and in the latter case, relatively high in order to ensure enhanced adhesion to the support. Either the oxygen atoms should be distributed at a low concentration, or the surface layer region on the free surface side of the amorphous layer should be formed with a distribution state of oxygen atoms in the layer region (0) that does not actively contain oxygen atoms. good. In the present invention, a layer region (OCN
) The content of atoms (OCN) contained in the layer region (O
CN) itself or the layer region (OCN).
) is provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support. In addition, when another layer area is provided in direct contact with the layer area (OCN), the characteristics of the original layer area and 1. The content of atoms (OCN) is appropriately selected in consideration of the relationship with the properties at the contact interface with the original layer region. The amount of atoms (OCN) contained in the layer region (OCN) is determined as desired depending on the properties required of the photoconductive member to be formed, but is preferably 0.001 to 50 atomic%, More preferably 0.002-40 atomic%, optimally 0.0
It is desirable to set it as 03-30 atomic%. In the present invention, whether the layer region (OCN) occupies the entire area of the photoreceptive layer or even if it does not occupy the entire area of the photoreceptor layer, the layer thickness T of the photoreceptor layer is equal to the layer thickness TO of the layer area (OCa). When the proportion of atoms (OCN) in the layer region (OCN) is sufficiently large, it is desirable that the upper limit of the content of atoms (OCN) contained in the layer region (OCN) be sufficiently greater than the above value. In the case of the present invention, if the ratio of the layer thickness TO of the layer region (OCN) to the layer thickness T of the photoreceptive layer is two-fifths or more, Atoms contained (
The upper limit of OCN) is preferably 30 ato
mic% or less, more preferably 20 ato++ic%
Hereinafter, it is optimally desirable to set it to 1 Oatomic% or less. According to a preferred embodiment of the present invention, atoms (OCN) are contained at least in the charge injection prevention layer and barrier layer provided directly on the support. By containing atoms (OCN) in the end layer region of the photoreceptive layer on the side of the support, it is possible to enhance the adhesion between the support and the photoreceptor layer. Further, in the case of nitrogen atoms, for example, in coexistence with boron atoms, it is possible to improve dark resistance and ensure high photosensitivity, so it is desirable to contain a desired amount in the photosensitive layer. Further, a plurality of types of these atoms (OCN) may be contained in the photoreceptive layer. That is, for example, the charge injection prevention layer may contain oxygen atoms, the photosensitive layer may contain nitrogen atoms, or, for example, oxygen atoms and nitrogen atoms may coexist in the same layer region. It may be included. In the present invention, the photosensitive layer composed of A-9i (rA-3i (H, Alternatively, it can be accomplished by a vacuum deposition method that utilizes a discharge phenomenon, such as an ion plating method. For example, in order to form a photosensitive layer composed of a-3i (H, According to What is necessary is to generate a glow discharge and form a layer consisting of a-9i (H, When forming by the shibatta ring method, for example, a target made of Si is used in an atmosphere of an inert gas such as Ar or He, or a mixed gas based on these gases. He,
A gas for introducing hydrogen atoms (H) and/or halogen atoms (X) diluted with a diluting gas such as Ar is introduced into a deposition chamber for sputtering to form a plasma atmosphere of the desired gas to form the target. You can do it by sputtering. In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon is housed in an evaporation board as an evaporation source, and the evaporation source is heated and evaporated by a resistance heating method, an electron beam method (EB method), or the like. This can be carried out in the same manner as in the sputtering method, except that the flying evaporated material is passed through a desired gas plasma atmosphere. Substances that can be used as raw material gas for supplying Si used in the present invention include 5i) 14 and Si2 H6. Silicon hydride (silanes) in a gaseous state or obtained by gasification, such as 5i3HI, SL4~, can be used effectively, and in particular, it is easy to handle during layer creation work and has a good Si supply rate. From these points of view, SiH4°, Si2 H6, and the like are preferred. Effective raw material gases for introducing halogen atoms used in the present invention include many halokene compounds, such as halogen gas, halides, interhalogen compounds, halogen-substituted silane derivatives, etc. Preferred examples include halogen compounds that can be converted into Further, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and whose constituent elements are silicon atoms and halogen atoms, can also be mentioned as effective in the present invention. Examples of halokene compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, BrF, and 'CJljF. Cl2F3, BrF6, BrF3, IF3
．． IF7. Examples include interhalogen compounds such as H0 and IBr. As a silicon compound containing a halogen atom, so-called a silane conductor substituted with a halogen atom, specifically, for example, S
iF4.5izF6, 5iCp4, SiBr4
Preferred examples include silicon halides such as the following. When forming the characteristic photoconductive member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, silicon hydride gas is not used as a raw material gas capable of supplying Si. In either case, a photosensitive layer consisting of a-5i containing halogen atoms can be formed on a desired support. When creating a photosensitive layer containing halogen atoms according to the glow discharge method, basically silicon halide and Ar are used as raw material gas for supplying Si, for example. B2. By introducing a gas such as He into a deposition chamber in which a photosensitive layer is to be formed at a predetermined mixing ratio and gas flow rate, and generating a glow discharge to form a plasma atmosphere of these gases, a desired mixture can be achieved. Although a photosensitive layer can be formed on the support, hydrogen gas or a silicon compound gas containing hydrogen atoms may be added to these gases in order to more easily control the ratio of hydrogen atoms introduced. A layer may be formed by mixing desired amounts. Me, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio. In order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blating method,
The above-mentioned halogen compound or the above-mentioned silicon compound containing halogen atoms may be introduced into a gaseous deposition chamber to form a plasma atmosphere of the gas. In addition, when introducing hydrogen atoms, the raw material gas for hydrogen atom introduction, for example, B2 or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into the deposition chamber for sputtering to form a plasma atmosphere of the gases. In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as the raw material gas for introducing halogen atoms, but HF is also used. )1ci2. )IBr, hydrogen halides such as old, SiH
2F2゜5iH2I2.5iH2(u2,5i)Ic
Gaseous or gasifiable substances such as halogen-substituted silicon hydrides such as ln, 5iH2Br2, 5iHBr3, etc. can also be mentioned as effective starting materials for forming the photosensitive layer. Among these substances, halides containing hydrogen atoms introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, at the same time as halogen atoms are introduced into the layer during the formation of the photosensitive layer. In the present invention, it is used as a suitable raw material for introducing halogen. In the charge injection prevention layer or photosensitive layer constituting the photoreceptive layer,
In order to structurally introduce a substance (C) that controls conduction properties, for example, a group Ⅰ atom or a group V atom, a starting material for introducing a group Ⅰ atom or a group V atom is added during the formation of each layer. An amorphous layer is formed in a deposition chamber using the starting material for introducing atoms in a gaseous state.
It may be introduced together with other starting materials for the formation of the compound. As the starting material for such introduction of Group (I) atoms, it is desirable to employ materials that are gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, as a starting material for introducing a group Ⅰ atom, B2Hs is used for introducing a boron atom. B4110 + B5 H! + B5 Hll +
BG-+ B6 + B, boron hydride such as islands, BF3
, BCQ3, BBr3, and other boron halides. Besides this, MCI! 3. GaCl23゜Ga(
CH2)3, InC,93, TQ'CQz, etc. can also be mentioned. In the present invention, the starting materials for introducing Group V atoms that are effectively used for introducing phosphorus atoms are PH,
Hydrogenated phosphorus such as P2H4, PH4I. P B3 + P B5 + P CR31P C'
Q5 + P B T3' * P B B5 + P
Examples include halogenated phosphorus such as No. 3. Besides this, ASH31
ASF3 + AgCCl23, AsBr3, A
SF5.5b) (z +S'bF3.SbF5,
Sbα3. sbgo5, BiI3. B1Cu3. BiB'r3 and the like can also be mentioned as effective starting materials for introducing Group V atoms. In the present invention, in order to provide a layer region (OCN) containing atoms (OCN) in the photoreceptive layer, a starting material for introducing atoms (OCN) is added to the above-mentioned photoreceptor when forming the photoreceptor layer. It may be used together with a starting material for layer formation, and contained in the formed layer while controlling its amount. When a glow discharge method is used to form the layer region (OCN), a starting material for introducing atoms (OCN) is added to the starting material selected as desired from among the starting materials for forming the photoreceptive layer described above. It will be done. As the starting material for such introduction of atoms (OCN), most of the gaseous substances or gasified substances whose constituent atoms are at least atoms (OCN) are used. Specifically, for example, oxygen (02) and ozone (03). -Nitrogen oxide (NO), nitrogen dioxide (NO2), -nitrogen dioxide (NzO), nitrogen sesquioxide (Hz()+-)
. Nitrogen sesquioxide (N205), nitrogen dioxide (NOa). Trinitrogen tetraoxide (N2Q4), whose constituent atoms are a silicon atom (Sl), an oxygen atom (0), and a hydrogen atom (H), for example, disiloxane (H3S its i'!b)
. Trisiloxane (H3SiO5i) I 20Silb
), etc. 1. Methane (CH4), ethane (C2Hs). Propane-(C3H1), n-Buta7 (n Q&). Saturated hydrocarbons with 1 to 5 carbon atoms such as pentane (Cs Hu ), ethylene (C2H4), propylene (CIHG)
. Butene-1 (C4H1), Butene-2, (C4H+). Inbutylene (C4H@), pentene (C5Hll)
), acetylene hydrocarbons having 2 to 4 carbon atoms such as acetylene (C2H2), methylacetylene (C3H4), butyne (C4, H6), nitrogen (NZ), ammonia (NHj), hydrazine (H2NNH2), hydrogen azide (HN3N)
3. Ammonium azide (Nl(4N3), nitrogen trifluoride (F
3N), nitrogen tetrafluoride (FaN2), and the like. In the case of the sputtering method, the starting materials for the introduction of atoms (OCN) include, in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, as solidified starting materials:
Examples include 5i02, Si3N, carbon black, and the like. These are used as sputtering targets together with targets such as Si. Examples of the present invention will be described below. Example 1 In this example, a semiconductor laser (wavelength 780 r+m) with a spot diameter of 80 pm was used. Therefore A-3i:
Cylindrical AM support (length L) on which H is deposited
A spiral groove with a pitch (P) of 25 pm and a depth of D) of 0.83 was made using a lathe on the substrate (357 mm, diameter (r) 80 mm). The shape of the groove at this time is shown in FIG. A charge-injection prevention layer and a photosensitive layer were deposited on this A-pattern support using the apparatus shown in FIG. 11 in the following manner. First, the configuration of the device will be explained. 1101 is a high frequency power supply, 1
102 is a matching box, 1103 is a diffusion pump and a mechanical booster pump, 1104 is a motor for rotating the All support, 1105 is an An support, 1106 is a heater for heating the AfL support, 1107 is a gas introduction pipe, -
1108 is a cathode electrode for high frequency introduction, 1108 is a shield plate, 1110 is a power source for a heater, 1121 to 1125
, 1141-1145 are valves, 1131-1135
is a mass flow controller, 1151 to 1155 are regulators, 1161 is a hydrogen (H2) cylinder, 1162
1163 is a silane (SiH4) cylinder, and 1163 is a silane (SiH4) cylinder.
2H8) cylinder, 1164 is a nitrogen oxide (NO) cylinder, and 1167 is a methane CcH4) cylinder. Next, the manufacturing procedure will be explained. All main valves of cylinders 1161 to 1165 were closed, all mass flow controllers and valves were opened, and the pressure inside the deposition apparatus was reduced to 10'' Torr using a diffusion pump 1103. At the same time, the heater of 1106 is used to heat the An support of 1105 to 250
℃ and kept constant at 250 ℃. 1105 An
After the temperature of the support becomes constant at 250 °C 1121~
Close the valves 1125.1141 to 1145.1151 to 1155, open the main valves of cylinders 1181 to 1165, and replace the diffusion pump 1103 with a mechanical booster pump. The secondary pressure of the regulator-equipped valves 1151 to 1155 was set to 1.5 kg/cy/. 1
The mass flow controller 131 was set to 3009CCH, and the valves 1141 and 1121 were sequentially opened to introduce H2 gas into the deposition apparatus. Next, the SiH4 gas of 1161 and the mass flow controller of 1132 were set to 1509 CCM, and the SiH4 gas was introduced into the deposition apparatus in the same manner as the introduction of H2 gas. Next, the B2H6 gas flow rate of 1163 was adjusted to 1 to become IBOOVol Ppm with respect to the SiH4 gas flow rate.
133 mass flow controller was set, and E2 H6 gas was introduced into the deposition apparatus in the same manner as the introduction of H2 gas. Next, set the mass flow controller of 1234 so that the NO gas flow rate of 1264 is 3.4 Vo1% with respect to the L4 gas flow rate, and add NO gas to the deposition device using the same operation as introducing H2 gas. introduced within. When the internal pressure in the deposition apparatus stabilized at 0.2 Torr, the high frequency power source 1101 was turned on and the matching box 1102 was adjusted to generate a glow discharge between the AI support 1105 and the cathode electrode 1108.・A-9i:H with a high frequency power of 150W and a thickness of 5 m.
:B:0 layer (resulting in 8 P-type A-9i layers containing B and 0) was deposited (charge injection prevention layer). Do it like this 5
g After depositing m-thick A-3i:H:B (P type) layer, close the valve 1123 without turning off the discharge E2 H6
stop the influx of And high frequency power 150W Te 20g m thickness A-3
i: 8 layers (non-doped) deposited (photosensitive layer)
. After that, the high frequency power supply and gas valves were all closed, the deposition apparatus was evacuated, and the temperature of the An support was lowered to room temperature.
The support on which the photoreceptive layer was formed was taken out. Separately, a charge injection prevention layer and a photosensitive layer were formed on the same cylindrical An support with the same surface properties under the same conditions and manufacturing procedure as above, except that the high frequency power was 40 W. However, as shown in FIG. 12, the surface of the photosensitive layer 1203 is
It was parallel to the plane of the support 1201. At this time, the difference in the total layer thickness between the center and both ends of the An support is l
pm・Also, when the above-mentioned high frequency power was set to 160W, the first
As shown in FIG. 3, the surface of the photosensitive layer 1303 and the surface of the support 1301 were non-parallel. In this case, the difference in average layer thickness between the center and both ends of the An support was 2 m. Regarding the above two types of photoreceptive layer members for electrophotography, what is the wavelength? 80r+m semiconductor laser sp-/ ) diameter 80p
An interference fringe pattern was observed on the light-receiving member subjected to image exposure using the apparatus shown in FIG. On the other hand, in the light receiving member having the surface properties shown in FIG.
No interference fringe pattern was observed, and a product showing electrophotographic characteristics sufficient for practical use was obtained. Example 2 The surface of a cylindrical A-shaped support was machined using a lathe as shown in Table 1. On these cylindrical An supports (Nos. 101 to 108), electrophotographic light-receiving members were produced under the same conditions as in Example 1 under which the interference fringe pattern disappeared (high-frequency power IBOW). (No. 111 to 118"). The difference in average layer thickness between the center and both ends of the An support of the electrophotographic light-receiving member at this time was 2.2 gm. When the cross section of the receiving member was observed with an electron microscope and the difference in the pitch of the photosensitive layer was measured, it was found that the second
The results shown in the table were obtained. Regarding these light receiving members,
As in Example 1, image exposure was carried out using a semiconductor laser with a wavelength of 780 nm and a spot diameter of 80 pm using the apparatus shown in Figure 2, and the results shown in Table 2 were obtained. Example 3 A light-receiving member (Noll-128) was produced under the same conditions as in Example 2 except for the following points. At that time, the thickness of the charge injection prevention layer was set to 1 layer m. The charge at this time The difference in average layer thickness between the center and both ends of the injection prevention layer is 1.271m.
, the average difference in the thickness of the photosensitive layer between the center and both ends is 2.3p.
It was m. When the thickness of each layer of Nos. 121 to 128 was measured using an electron microscope, the results shown in Table 3 were obtained. These light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and the results shown in Table 3 were obtained. Example 4 A cylindrical A-shaped support with the surface properties shown in Table 1 (No.
101-108) A photoreceptive member having a nitrogen-containing charge injection blocking layer provided thereon was produced under the conditions shown in Table 4. (N
o, 401-408) The cross section of the light receiving member produced under the above conditions was observed with an electron microscope. The average layer thickness of the charge injection blocking layer was 0.0!3 pm at the center and both ends of the cylinder. The average layer thickness of the photosensitive layer was 31 Lm at the center and both ends of the cylinder. The layer thickness difference within the short range of the photosensitive layer of each light receiving member was the value shown in Table 5. When each light-receiving member was subjected to imagewise exposure with laser light in the same manner as in Example 1, the results shown in Table 5 were obtained. Example 5 A cylindrical Al support with the surface properties shown in Table 1 (No.
101-108) A light-receiving member having a nitrogen-containing charge injection blocking layer provided thereon was prepared under the conditions shown in Table 6 = (
No. 501 to 508) The cross sections of the light receiving members produced under the above conditions were observed with an electron microscope. The average layer thickness of the charge injection blocking layer was 0.3 gm at the center and both ends of the cylinder. The average layer thickness of the photosensitive layer is 3 at the center and both ends of the cylinder.
．． It was 2 lm. The layer thickness difference within the short range of the photosensitive layer of each light-receiving member was the value shown in Table 7. When each light-receiving member was subjected to image exposure with laser light in the same manner as in Example 1, the results shown in Table 7 were obtained. Example 6 A cylindrical Al support with the surface properties shown in Table 1 (No.
Light-receiving members having a charge injection blocking layer containing carbon provided thereon (Nos. 101 to 108) were prepared under the conditions shown in Table 8. (N
o, 901-808) The cross section of the light receiving member produced under the above conditions was observed with an electron microscope. The average layer thickness of the charge injection blocking layer was 0.08 Bm at the center and both ends of the cylinder. The average layer thickness of the photosensitive layer was 2.51 Lm at the center and both ends of the cylinder. The layer thickness difference within the short range of the photosensitive layer of each light-receiving member was the value shown in Table 9. When each light-receiving member was subjected to imagewise exposure with laser light in the same manner as in Example 1, the results shown in Table 9 were obtained. Example 7 A cylindrical Al support with the surface properties shown in Table 1 (No.
101-107) A light-receiving member having a charge injection blocking layer containing carbon provided thereon was produced under the conditions shown in Table 10. (
No. 1101 to 1108) The cross sections of the light receiving members produced under the above conditions were observed using an electron microscope. The average layer thickness of the charge injection blocking layer is 1.1p at the center and both ends of the cylinder.
It was m. The average layer thickness of the photosensitive layer was 3.4 m at the center and both ends of the cylinder. The layer thickness difference within the short range of the photosensitive layer of each light receiving member was the value shown in Table 11. When each light-receiving member was subjected to image/image exposure with laser light in the same manner as in Example 1, the results shown in Table 11 were obtained.-6 Comparative Example As a comparative experiment, the electrophotographic light-receiving member of Example 1 was created. The electrophotographic light-receiving member was prepared using a high-frequency power of 150 W as in Example 1 above, except that an AM support whose surface was roughened by sandblasting was used instead of the An support used in this case. A- in exactly the same way as
A 3i electrophotographic light receiving member was prepared. The surface condition of the An support, which had been surface-roughened by sandblasting, was measured using a universal surface profile measuring instrument (SE-30) of Koita Research Institute before forming the photoreceptive layer. The surface roughness was found to be 1.8 pm. When this comparative electrophotographic light-receiving member was attached to the apparatus of the same name used in Example 14 and the same measurements were performed, clear interference fringes were formed in the all-black image. Table 1 Table 2 O Most suitable for practical use Table 5 × Not suitable for practical use △ Sufficient for practical use O Good for practical use ■ Most suitable for practical use Table 7 × Not suitable for practical use △ Practically sufficient O Practically good O Practically optimal Table 9 Table × Not suitable for practical useΔ Practically sufficient O Practically good O Optimal for practical use

[Brief explanation of the drawing]

FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram for explaining the appearance of interference fringes in the case of a multilayered light-receiving member. FIG. 3 is an explanatory diagram for explaining the appearance of interference fringes due to scattered light. FIG. 4 is an explanatory diagram for explaining the appearance of interference fringes due to scattered light in the case of a light-receiving member having a multilayer structure. FIG. 5 is an explanatory diagram of interference fringes when the interfaces of each layer of the light receiving member are parallel. FIG. 6 is an explanatory diagram for explaining the principle that interference fringes do not appear when the interfaces of each layer of the light-receiving member are non-parallel. FIG. 7 is an explanatory diagram showing a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and when they are non-parallel. FIG. 8 is an explanatory diagram for explaining the fact that interference fringes do not appear when the interfaces of each layer are non-parallel, expanded to the case of two layers. FIG. 9 is an explanatory diagram of each light receiving member. FIG. 10 is an explanatory diagram of the surface state of the An support used in Example 1. FIG. 11 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIGS. 12 and 13 each show the structure of the light-receiving member produced in Example 1. FIG. 14 is a schematic explanatory diagram for explaining the image exposure apparatus used in the example. 900・・・・・・・・・・・・・・・・・・・・・
・Photoreceptor 802・・・・・・・・・・・・・・・
......Photoreceptive layer 901.1201.1301
......An support body 903.1202.13
02・・・・・・Charge injection prevention layer 904.120
3.1303...Photosensitive layer 1401...
・・・・・・・・・・・・・・・・・・Light receiving member for electrophotography 1402・・・・・・・・・・・・・・・
......Semiconductor laser 1403...
・・・・・・・・・・・・・・・・・・fθ lens 1
404・・・・・・・・・・・・・・・・・・・・・
・・Polygon mirror 1405・・・・・・・・・・・・
...... Plan view of exposure device 140B.
・・・・・・・・・・・・・・・・・・・・・・・・Side view of exposure device (A) (B) (C) FF 41Ld[

Claims (1)

Scope of Claims: (1) In a photoreceptive member having a multilayered photoreceptive layer having at least one photosensitive layer on a support, the photoreceptive layer includes oxygen atoms, carbon atoms, nitrogen atoms. and the photosensitive layer has one or more pairs of non-parallel interfaces within a short range, and the non-parallel interfaces include at least one pair of atoms in a plane perpendicular to the layer thickness direction. A large number of honorable members are arranged in a direction, and each of the non-parallel interfaces is smoothly connected in the arrangement direction. (2) The light receiving member according to claim 1, wherein the arrangement is regular. (3) The light receiving member according to claim 1, wherein the arrangement is periodic. (4) The light receiving member according to claim 1, wherein the short range is 0.3 to 500 IL. (5) The light-receiving member according to claim 1, wherein the non-parallel interface is formed based on regularly arranged smooth irregularities provided on the surface of the support. (6) The light-receiving member according to claim 5, wherein the smooth irregularities are formed by sinusoidal shadow linear protrusions. (7) The light-receiving member according to claim 1, wherein the support body is cylindrical. (8) The light-receiving member according to claim 7, wherein the sinusoidal shadow linear protrusion has a spiral structure within the plane of the support. (8) The light-receiving member according to claim 8, wherein the spiral structure is a multi-spiral structure. (10) The light-receiving member according to claim 6, wherein the sinusoidal shadow linear projection is divided in the direction of its ridgeline. (11) The light-receiving member according to claim 7, wherein the ridgeline direction of the sinusoidal shadow linear projection is along the central axis of the cylindrical support. (I2) The light receiving member according to claim 5, wherein the smooth unevenness has an inclined surface. (13) The light-receiving member according to claim 12, wherein the inclined surface is mirror-finished. (14) The photoreceptor according to claim 5, wherein the free surface of the photoreceptor layer has smooth unevenness arranged at the same pitch as the smooth unevenness provided on the support surface. Element.