JPS60257454A - Light receiving member - Google Patents

Abstract

PURPOSE:To obtain a ligh receiving member suitable for imaging using interfering monochromatic light, easy in manufacture management by forming the image receiving member composed of a substrate provided with a large number of protuberances on the surface, and a light receiving layer having in at least one layer region incorporating a photosensitive layer made of an amorphous material contg. Si and at least one of O, C, and N. CONSTITUTION:The light receiving member 1000 is constituted by laminating on the substrate 1001 subjected to surface cutting, the light receiving layer 1002 composed of, from the substrate side, an electrostatic charge injection preventive layer 1003, photosensitive layer 1004, and a surface layer 1005. The substrate 1001 may be electrically conductive or insulating, and as the conductive substrate, a metal or alloy, such as Ni, Cr, Pd, or their alloy, are usable, and as the insulating substrate, polyester, paper, etc., are generally used. The layer 1003 is prepared in order to prevent injection of charge from the substrate 1001 side to the photosensitive layer 1004, and to enhance apparent resistivity. The layer 1004 is made of A-Si(H, X), and it has both of charge generating function being allowed to generate photocarriers by irradiation of laser beams, and charge transfer function transferring charge.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to the use of light (here, light in a broad sense, such as ultraviolet rays, visible light,
It relates to a light-receiving member that is sensitive to electromagnetic waves such as infrared rays, X-rays, gamma rays, etc. More specifically, the present invention relates to a light receiving member suitable for using coherent light such as laser light.

[Conventional technology]

As a method for recording digital image information as an image, an electrostatic latent image is formed by optically scanning a light-receiving member with a laser beam modulated according to the digital image information, and then the latent image is developed and A well-known method is to record an image by performing processes such as transfer and fixing accordingly. Among these, in image forming methods using electrophotography, image recording is generally performed using a small and inexpensive He--Ne laser or semiconductor laser (usually having an emission wavelength of 650 to 820 nm).

In particular, electrophotographic light-receiving members suitable for use with semiconductor lasers have a much better consistency in their photosensitivity region than other types of light-receiving members. It has a high Vickers hardness and is socially non-polluting, such as those disclosed in JP-A No. 54-86341 and JP-A No. 56-Sho.
A light-receiving member made of an amorphous material containing silicon atoms (hereinafter abbreviated as rA-5i, 1) disclosed in Japanese Patent No. 83746 has been attracting attention.

According to Jisei et al., when the photosensitive layer is an A-3i layer with an intermediate layer structure, it maintains its high photosensitivity while achieving the 1 required for electrophotography.
In order to ensure a dark resistance of 0'2 Ωcm or more, it is necessary to structurally contain hydrogen atoms, halogen atoms, or boron atoms in addition to these in a specific amount range in a controlled manner in the layer. Therefore, there are considerable limitations on the tolerance in the design of the light-receiving member, such as the need to control layer formation in flower offerings.

You can expand the tolerance of this setting. For example, Japanese Patent Application Laid-open Sho, 54-12 is an example of a device that makes it possible to effectively utilize high light sensitivity even if the dark resistance is low to some extent.
As described in JP-A No. 1743, JP-A-57-4053, and JP-A-57-4172, the photoreceptive layer has a two-layer structure in which layers having different conductive properties are laminated. Forming a depletion layer inside the photoreceptive layer, or JP-A-57-52178, JP-A-57-52179, JP-A-52-180.
No. 58159, No. 58160, pal 581
As described in each publication of No. 61, the photoreceptive layer is formed into a multilayer structure in which a barrier layer is provided between the support and the photosensitive layer, and/or on the surface of the two parts of the photosensitive layer, thereby creating an apparent appearance. A light-receiving member with increased dark resistance has been proposed.

Through such proposals, A-3i-based light-receiving materials have made rapid progress in terms of commercialization tolerance, ease of manufacturing control, and productivity. The speed of development toward commercialization is accelerating.

When laser recording is performed using a light-receiving member with such a multilayered light-receiving layer, the thickness of each layer is uneven, and the laser light is coherent monochromatic light, so the light-receiving layer is Reflected from the free surface of the laser beam irradiation side, each layer constituting the light-receiving layer, and the layer interface between the support and the light-receiving layer (hereinafter, both the free surface and the layer interface are collectively referred to as the "interface"). There is a tendency for each of the reflected lights to cause interference.

This interference phenomenon causes the so-called,
This appears as an interference fringe pattern and causes image defects, and particularly when forming a half-tone image with high gradation, the image becomes noticeably unsightly. Furthermore, as the wavelength range of the semiconductor laser light used becomes longer, the absorption of the laser light in the photosensitive layer decreases, so the above-mentioned interference phenomenon becomes remarkable.

This point will be explained with reference to the drawings.

FIG. 1 shows the light weight ◇ incident on a certain layer constituting the light-receiving layer of the light-receiving member, the reflected light R1 reflected at the upper interface 102,
The reflected light R7 reflected at the lower interface 101 is shown.

If the average layer thickness of the layer is d, the refractive index is n, and the wavelength of light is uneven due to the thickness difference λ, then the reflected light 1j, , R2 will be 2nd-m input (m
is an integer, and the reflected light strengthens each other) or 211d, the amount of absorbed light and the amount of transmitted light of a certain layer change.

In a light-receiving member having a multilayer structure, the interference effect shown in FIG. 1 occurs in each layer, and as shown in FIG. 2, a synergistic adverse effect occurs due to each interference. Therefore, interference fringes corresponding to the interference fringe pattern appear in the visible image transferred and fixed on the transfer member, causing a defective image.

A method to overcome this inconvenience is to diamond-cut the surface of the support and provide unevenness of ±500A to ±10,000 to form a light-scattering surface (for example,
162975), a method of providing a light absorption layer by subjecting the surface of an aluminum support to black alumite treatment, or dispersing carbon, colored pigments, or dyes in a resin (for example, Japanese Patent Laid-Open No. 57-165845). , Aluminum l The surface of the support is treated with a satin-like alumite,
A method has been proposed in which a layer of light scattering and anti-reflection 11 is provided on the surface of the support by creating fine irregularities in the form of grains by sandblasting (for example, Japanese Patent Laid-Open No. 57-1.6554" + Publication). There is.

With these conventional methods, Jisei et al. were unable to completely eliminate the interference fringe pattern that appears on images.

In other words, in the first method, the surface of the support is simply provided with a large number of irregularities of a specific size, so although it does prevent the appearance of interference fringes due to the light scattering effect, it does not affect the light scattering. Since the specularly reflected light component still exists, in addition to the remaining interference fringe pattern due to the specularly reflected light, the irradiation spot spreads due to the light scattering effect on the support surface, resulting in a substantial This was a cause of a decrease in resolution.

In the second method, complete absorption is impossible with the black alumite treatment, and the reflected light on the surface of the support remains. In addition, when a colored pigment-dispersed resin layer is provided, when forming the A-5i photosensitive layer, a degassing phenomenon occurs from the resin layer, and the layer quality of the formed photosensitive layer is significantly deteriorated. 3
There are disadvantages such as being damaged by the prism during the formation of the i-based photosensitive layer, reducing its original absorption function, and having a negative impact on the subsequent formation of the A-5i-based photosensitive layer due to deterioration of the surface condition. be.

The third method of irregularly roughening the surface of the support is as shown in FIG. enters the inside of the light-receiving layer 302 and becomes transmitted light (1). The amount of transmitted light is such that on the surface of the support 302, a part of it is scattered and becomes diffused light, 2, 3, etc., and the rest is stopped and reflected as reflected light R2, A part of it becomes the emitted light R6 and goes outside. Therefore, since the emitted light R3, which is a component that interferes with the reflected light R1, remains, the interference fringe pattern cannot be completely erased.

It also prevents multiple reflections inside the light-receiving layer by preventing 1° crossing.
If the diffusivity of the surface of the support 301 is increased in order to achieve 1-1, there is also the drawback that the resolution is lowered because light is diffused within the light-receiving layer and halation occurs.

In particular, in a multilayered light-receiving member, even if the surface of the support 401 is irregularly roughened, as shown in FIG.
The reflected light R2 on the layer 402, the reflected light R2 on the second M layer, and the specularly reflected light R3 on the surface of the support 401 all intersect, producing an interference fringe pattern according to the thickness of each layer of the light-receiving member. Therefore, in a light receiving member having a multilayer structure, the support 401
It has been impossible to completely prevent interference fringes by irregularly roughening the surface.

Furthermore, when the surface of the support is irregularly roughened by a method such as sandblasting, the degree of roughness varies widely between lofts, and even in the same lot, the 11-sidedness is uneven. There was a problem with manufacturing management. In addition, relatively large protrusions were often formed on the rungs, and such large protrusions caused local breakdown of the photoreceptive layer.

Moreover, if the support surface 501 is simply roughened regularly, FJ
As shown in Figure J5, the light receiving layer 502 is usually deposited along the uneven shape of the surface of the support 501,
The sloped surface of the unevenness of the photoreceptor layer 502 becomes parallel to the sloped surface of the unevenness of the photoreceptive layer 502.

Therefore, in that part, the incident light holds 2ndl=m input or 2ndl=(m slave station) input, and becomes a bright part or a dark part, respectively. In addition, for the entire photoreceptive layer, the layer thickness d1 of the photoreceptive layer is
, d2. d3. Light and dark striped patterns appear because of the different characteristics of dn.

Therefore, just by regularly roughening the surface of the support 501,
It is not possible to completely prevent the occurrence of interference fringes.

In addition, even when a multilayered light-receiving layer is deposited on a support whose surface is regularly roughened, the specularly reflected light on the support surface as explained for the single-layered light-receiving member in FIG. In addition to the interference with the reflected light on the surface of the light-receiving layer, interference from the reflected light at the interface between each layer is also added, so the degree of interference fringe appearance is more complicated than that of a single-layer light-receiving member. Become.

[Purpose of the invention]

It is an object of the present invention to provide a new light-sensitive light-receiving member which eliminates the above-mentioned drawbacks.

Another object of the present invention is to provide a light-receiving member that is suitable for image formation using coherent monochromatic light and that is easy to control in manufacturing.

Still another object of the present invention is to provide a light-receiving member that can simultaneously and completely eliminate the interference fringe pattern that appears during image formation and the appearance of spots during reversal development.

Another object of the present invention is to provide a light-receiving member that allows digital image recording using electrophotography, especially digital image recording with halftone information to be performed clearly, with high resolution, and with high quality.

Yet another object of the present invention is to provide a light-receiving member having high photosensitivity, high signal-to-noise ratio characteristics, and good electrical contact with the support.

Another object of the present invention is to provide a light receiving member that can reduce light reflection on the surface of the light receiving member and efficiently utilize incident light.

[Summary of the invention]

The light-receiving member of the present invention includes a support having a surface having a large number of convex portions whose cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed; A light-receiving member comprising: a layer made of a crystalline material and having at least a part of the layer region being photosensitive; and a light-receiving layer comprising a surface layer having an antireflection function, the at least part of the layer region The photosensitive layer is characterized by containing at least one type selected from oxygen atoms, carbon atoms, and nitrogen atoms.

Hereinafter, the present invention will be specifically explained with reference to the drawings.

FIG. 6 is an explanatory diagram for explaining the basic principle of the present invention.

In the present invention, a multilayer photoreceptive layer has one or more photosensitive layers on a support (shown below) having an uneven shape smaller than the required resolution of the apparatus, along the slope of the unevenness. As shown in enlarged view in FIG. 6(A), the second layer 60
Since the layer thickness d of No. 2 changes continuously from d to d, the interface 603 and the interface 604 have a tendency toward each other.

Therefore, the coherent light incident on this minute part (short range) text causes interference in the minute part (short range) text.

Produces minute interference fringes.

Furthermore, if the interface 703 between the first layer 701 and the second layer 702 and the free surface 704 of the second layer 702 are non-parallel as shown in FIG. Since the traveling directions of the reflected light R1 and the emitted light R3, which become the light Io, are different from each other, when the interfaces 703 and 704 are parallel (r (
B) The degree of interference is reduced compared to J).

Therefore, as shown in Figure 7 (C), if the pair of interfaces are parallel, r (B) If they are non-parallel than J, r
(A) In J, even if there is interference, the difference in brightness of the interference fringe pattern is so small that it can be ignored. As a result, the amount of light incident on the minute portion is equalized.

As shown in FIG. 6, this is true even if the thickness of the second layer 602 is macroscopically non-uniform (dy #d8), so the amount of incident light becomes uniform over the entire layer area ( (See r (D)J in Figure 6) Also, the effects of the present invention will be described in the case where the light-receiving layer has a multilayer structure and coherent light is transmitted from the irradiation side to the second layer. , as shown in FIG. 8, the incident light I. There is one reflected light beam R,, R2, R3, R4, and R5 for each reflected light beam.

Therefore, in each layer, what was explained above with reference to FIG. 7 occurs.

Moreover, each layer interface within the micropart acts as a kind of slit, where diffraction development occurs.

Therefore, the effect of interference in each layer appears as a product of interference due to the difference in layer thickness and interference due to diffraction at the layer interface.

Therefore, when considering the entire photoreceptive layer, interference is a synergistic effect in each layer, so according to the present invention, as the number of layers constituting the photoreceptive layer increases, the interference effect can be further prevented. I can do it.

Further, interference fringes generated within the minute portion do not appear in the image because the size of the minute portion is smaller than the irradiation light spot diameter, that is, smaller than the resolution limit. Moreover, even if it appears in the image, it is below the resolution of the eye, so it does not actually cause any trouble.

In the case of the present invention, it is desirable that the uneven inclined surface has a mirror finish in order to reliably align the reflected light in one direction.

The size of the minute portion (=one period of the concavo-convex shape) suitable for the present invention satisfies the condition ≦L, where L is the spot diameter of the irradiation light.

In addition, in order to more effectively achieve the object of the present invention, it is desirable that the difference in layer thickness (ds db) in minute portions is as follows, where the wavelength of the irradiation light is taken as input.

In the present invention, within the layer thickness of a microscopic portion of a multilayered photoreceptive layer (hereinafter referred to as "microcolumn J"), at least any two layer interfaces are in a non-parallel relationship. The layer thickness of each layer is controlled within the microcolumn, but if this condition is satisfied, any two layer interfaces may be in a parallel relationship within the microcolumn.

However, it is desirable that the layers forming parallel layer interfaces be formed to have a uniform layer thickness over the entire area, with the difference in layer thickness between any two positions being as follows.

In order to more effectively and easily achieve the object of the present invention, the layer thicknesses are adjusted according to the optical standard in forming each layer, such as the photosensitive layer, the charge injection prevention layer, and the barrier layer made of an electrically insulating material, which constitute the photoreceptive layer. The prisma vapor phase method (PC
(VD method), optical CVD method, and thermal CVD method.

As methods for processing the support to achieve the object of the present invention, chemical methods such as chemical etching and electroplating, physical methods such as vapor deposition and sputtering, and mechanical methods such as lathe processing can be used. However, in order to easily manage production, a mechanical processing method such as a lathe is preferred.

For example, when machining a support with a lathe, a cutting tool having a 7-shaped cutting edge is fixed at a predetermined position on a cutting machine such as a milling machine or a lathe, and the cylindrical support is machined according to a program designed in advance according to the desired results. By regularly moving in a predetermined direction while rotating, the surface of the support is accurately cut to form a desired uneven shape, pitch, and depth. The linear protrusion created by the unevenness formed by such a cutting method has a spiral structure centered on the central axis of the cylindrical support. The spiral design of the protrusion is
It may be a double or triple spiral structure, or a crossed spiral structure.

Alternatively, in addition to the spiral structure, a slow line drawing along the central axis may be introduced.

In order to enhance the effects of the present invention and to facilitate processing control, it is preferable that the convex portions within a predetermined cross section of the support of the present invention have approximately the same shape.

Further, the convex portions are preferably arranged regularly or periodically in order to enhance the effects of the present invention. Furthermore, it is preferable that the convex portion has a plurality of sub-peaks in order to enhance the effect of the present invention and increase the adhesion between the light-receiving layer and the support.

In addition to each of these, in order to efficiently scatter incident light in one direction, the convex portion may be symmetrical (FIG. 9(A)) or asymmetrical (FIG. 9(B)) about the main peak. It is preferable that they be unified. However, in order to increase the degree of freedom in controlling the processing of the support, it is better to have both of them mixed together.

In the present invention, each dimension of the unevenness provided on the surface of the support under controlled conditions is set so as to effectively achieve the objective of the present invention, taking into consideration the following points. .

That is, firstly, the A-3i layer constituting the photosensitive layer is structurally sensitive to the condition of the surface on which the layer is formed, and the layer quality changes greatly depending on the surface condition.

Therefore, it is necessary to set the dimensions of the irregularities provided on the surface of the support so as not to deteriorate the layer quality of the A-3i photosensitive layer.

Secondly, if the free surface of the photoreceptive layer is extremely uneven, it becomes impossible to perform cleaning completely after image formation.

Further, when cleaning the blade, there is a problem that the blade becomes damaged quickly.

-I- As a result of examining the problems in the layer deposition described above, the problems in the electrophotographic process, and the conditions for preventing interference fringes, the pitch of the four parts of the support surface is preferably 50
0 p, m ~ 0,3 pm, more preferably 200
pLm-1p,m, optimally 50 ILm-5p.

It is desirable that it be m.

The maximum depth of the four parts is preferably 0.1gm to 5gm.
, more preferably 0.37 bm to 3 m, optimally 0.37 bm to 3 m.
It is desirable that it be 6 gm to 2 gm. If the pitch and maximum depth of the four parts on the surface of the support are within the above range, the four parts (
or linear protrusion) is preferably I I
N to 20 degrees, more preferably 3 degrees to 15 degrees, optimally 4 degrees
It is desirable that the temperature is between 10° and 10°.

Further, the maximum difference in layer thickness due to non-uniform layer pressure of each layer deposited on such a support is preferably 0.1 μm to 2.0 μm within the rotation pitch. m, more preferably 0, I I
Lm ~1, 5 p, m, optimally 0.2 pm ~1,
It is desirable to set it to m.

,,+, In the light-receiving member of the invention, at least one of The photosensitive layer contains at least one species selected from oxygen atoms, carbon atoms, and nitrogen atoms. Such atoms (OCN) contained in a layer in which at least a portion of the layer region is photosensitive are contained in the entire layer region of the layer in which at least a portion of the layer region is photosensitive. Alternatively, it may be unevenly distributed by containing it only in some layer regions of a layer in which at least some of the layer regions have a photosensitive property of 1. In the 4j state of atoms (OCN), it is desirable that the distribution concentration C (OCN) is uniform in the layer thickness direction of the photoreceptive layer and in a plane parallel to the surface of the support.

In the present invention, the layer region (OCN) containing atoms (OCN), which is provided in a layer in which at least a part of the layer region is photosensitive, has the main purpose of improving photosensitivity and dark resistance. In this case, the layer area of at least 2 parts is provided so as to occupy the entire layer area of the photosensitive layer, and the main purpose is to strengthen the adhesion between the support and the photoreceptive layer. In this case, at least a part of the layer region is provided so as to occupy the support side end layer region of the photosensitive layer.

In the former case, the atoms (O
It is desirable that the content of CN) be relatively low to maintain high photosensitivity, and in the latter case relatively high to ensure enhanced adhesion to the support.

In the present invention, the content of atoms (OCN) contained in a layer region (OCN) provided in a layer in which at least a part of the layer region is photosensitive is determined by the characteristics required for the layer region (OCN) itself. , or when the layer region (OCN) is provided in direct contact with the support, the layer region (OCN) is appropriately selected based on the organic relationship, such as the relationship with the characteristics at the contact interface with the support. I can do it. In addition, when another layer region is provided in direct contact with the layer region (OCN), the relationship between the characteristics of the layer region of the origin and the characteristics at the contact interface with the layer region of the origin. The content of atoms (OCN) is selected accordingly, taking into consideration the content of atoms (OCN) contained in the layer region (OCN).
The amount of N) is determined as desired depending on the required characteristics of the light receiving member to be formed, but is preferably 0.
001 to 50 atomic %, more preferably 0.001 to 50 atomic %.
002-40 atomic %, optimally 0.003
It is desirable that the content be 30 atomic %.

In the present invention, whether the layer region (OCN) occupies the entire area of the photoreceptive layer or even if it does not occupy the entire area of the photoreceptor layer, the layer pressure of the photoreceptor layer equal to the layer thickness T of the layer area (OCN) When the proportion of T is sufficiently large, it is desirable that the upper limit of the content of atoms (OCN) contained in the layer region (OCN) is sufficiently smaller than the above value.

In the uninvented case, the layer thickness T of the layer region (OCN).

When the proportion of the photoreceptive layer to the layer thickness T is two-fifths or more, the upper limit of the atoms (OCN) contained in the layer region (OCN) is preferably 30 atoms.
It is desirable that the content be mic% or less, more preferably 20 atomic% or less, more preferably 20 atomic% or less, and optimally 10 atomic% or less.

According to a preferred embodiment of the present invention, atoms (OCN) are contained at least in the charge injection prevention layer and the impact layer provided directly on the support. Strengthen the adhesion between the support and the light-receiving layer by including atoms (OCN) in the end layer region on the support side of the layer in which at least a part of the layer region is photosensitive. I can do it. Furthermore, in the case of nitrogen atoms, for example, in coexistence with boron atoms, it is possible to improve dark resistance and ensure high photosensitivity.
It is desirable that a desired amount of these atoms (OCN) be contained in the photosensitive layer, and a plurality of types of these atoms (OCN) may be contained in a layer in which at least a part of the layer region is photosensitive. That is, for example,
The charge injection prevention layer may contain oxygen atoms, and the photosensitive layer may contain nitrogen atoms, or, for example, may contain oxygen atoms and nitrogen atoms coexisting in the same layer region. Also good. In the present invention, A-3i (rA-3i(H,
)J) is formed by, for example, a vacuum deposition method that utilizes a discharge phenomenon such as a glow discharge method, a sputtering method, or an ion blating method. For example, by glow discharge method, a-3i
To form a photosensitive layer composed of (H, The raw material dregs for use and/or the raw material gas for introducing halogen atoms (X) are introduced at a desired dregs pressure into a deposition chamber whose interior can be reduced in pressure, and a glow discharge is generated in the deposition chamber to form a predetermined position. a-3i on a predetermined support surface.
It is sufficient to form a layer consisting of (H,X). In addition, when forming by sputtering, a target made of St is used in an atmosphere of an inert gas such as Ar or He, or a mixed gas based on these gases. A gas for introducing hydrogen atoms (H) and/or halogen atoms (X) diluted with a diluent gas such as He, A, or R is introduced into a deposition chamber for sputtering to form a plasma atmosphere of the desired gas. The target described above may be sputtered. In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon is housed in a vapor deposition port as an evaporation source, and this evaporation source is heated using a resistance heating method or an electron beam method (E B
This can be carried out in the same manner as in the sputtering method, except that the evaporated material is heated and evaporated by a method such as the sputtering method, and the flying evaporated material is passed through a desired gas plasma atmosphere.

Substances that can be used as raw material gas for supplying Si used in the present invention include SiH4, Si2H6, and 5iAHe.
, 5i4H+. Silicon hydrides (silanes) in a gaseous state or that can be gasified are effectively used, such as SiH4, SiH4, etc., in particular, from the viewpoint of ease of handling during layer creation work and good Si supply efficiency. S i 2 Hb + is preferred.

Many halides are effective as the raw material gas for introducing halogen atoms used in the present invention.
For example, halogen compounds in a gaseous state or capable of being gasified, such as halogen gas, halogen compounds, interhalogen compounds, and halogen-substituted silane derivatives, are preferably mentioned. Further, a borohydride compound containing a halogen atom, which is in a gaseous state or can be gasified and whose constituent elements are a silicon atom and a halogen atom, can also be mentioned as an effective compound in the present invention.

Specifically, halogen compounds that can be suitably used in the present invention include halogen gases such as fluorine, chlorine, bromine, and iodine, B, rF, CfLF, ClF3, BrF5
, BrF3, HF3, IF7, ICM, IBr, and other interhalogen compounds.

Examples of boron compounds containing halogen atoms, so-called silane derivatives substituted with halogen atoms, include SiF4, Si2 F6, and SiC. , 5iBr,
Preferred examples include silicon halides such as .

When forming the characteristic light-receiving member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, boron hydride gas is not used as a raw material gas capable of supplying Si. In either case, a photosensitive layer consisting of a-3i containing halogen atoms can be formed on a desired support.

When creating a photosensitive layer containing halogen atoms according to the glow discharge method, basically silicon halide and Ar are used as raw material gas for supplying Si, for example.

F2. By introducing a gas such as He into a deposition chamber in which a photosensitive layer is to be formed at a predetermined mixing ratio and gas flow rate, and generating a glow discharge to form a plasma atmosphere of these gases, a desired mixture can be achieved. [Support] Secondly, a photosensitive layer can be formed, but in order to control the introduction ratio of hydrogen atoms so that the layer can be easily formed, hydrogen gas or boron containing hydrogen atoms is added to these gases. A desired amount of compound gas may also be mixed to form a layer. Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blating method,
A gas of the halogen compound or a boron compound containing halogen atoms may be introduced into the deposition chamber to form a plasma atmosphere of the gas. In addition, when introducing hydrogen atoms, a raw material gas for introducing hydrogen atoms, such as F2 or the above-mentioned silane gases, is introduced into the deposition chamber for sputtering to form a plasma atmosphere of the gas. Good.

In the present invention, the halogen compounds listed in "2" or silicon compounds containing halogen are effectively used as raw material gases for introducing halogen atoms, but other gases include HF, FO, HBr, and HI. Hydrogen halides such as S i F2 F2 +SiH2I, SiH2
0 sentences, 5iHCu3 +5fH2Br2 , SfH,
Gaseous or gasifiable substances such as halogen-substituted boron hydrides such as , Br, , 5t) IBr3 can also be mentioned as effective starting materials for forming the photosensitive layer. Among these substances, halides containing hydrogen atoms introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, at the same time as halogen atoms are introduced into the layer during the formation of the photosensitive layer. In the present invention, it is used as a suitable raw material for introducing halogen.

In the charge injection prevention IL layer or photosensitive layer constituting the photoreceptive layer,
In order to structurally introduce a substance (C) that controls conduction properties, for example, a group Ⅰ atom or a group V atom, a starting material for introducing a group Ⅰ atom or a group V atom is added during the formation of each layer. The starting material for introducing atoms may be introduced in a gaseous state into the deposition chamber together with other starting materials for forming the photoreceptive layer. As the starting material for such introduction of Group (I) atoms, it is desirable to employ materials that are gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions.

Specifically, as a starting material for introducing a group Ⅰ atom, B2H6+ B4 H10+ is used for introducing a boron atom.
BS B5 ・BS HIf + B6 HIQ(”
+ B6 H11+ Boron hydride such as B6 H14,
BF3.

Examples include boron halides such as 1' BCl3 and BB r3. Kono et al., AlCl2, GaC sentence 3 + Ga (
CH3)3, I n0 sentence 3, TlCO3, etc. can also be mentioned.

In the present invention, the starting materials for introducing Group V atoms that are effectively used for introducing phosphorus atoms include PH3,
Other hydrogen terms such as P2H4, PH4I, PF3, PF,
, PCl, , PCIl, PBr3 , PBr3 , PI
Examples include halogens such as No. 3. In addition, AsH3, A
sF3. AsCC statement.

, AsBr3, AsF5, SbH3, SbF3.

SbF5,5bCu:, t, Sb0 sentence 5 + BI
In the present invention, B3 + BiC, B1Br3, etc. can also be cited as effective starting materials for introducing Group V atoms. In order to provide a layer region containing (OCN), the starting material for the introduction of atoms (OCN) during the formation of a layer in which at least a part of the layer region is photosensitive is used as a starting material for forming the photoreceptive layer. It may be used in conjunction with the above, and the amount thereof may be controlled and contained in the formed layer.

When a glow discharge method is used to form the layer region (OCN), a starting material for introducing atoms (OCN) is added to the starting material selected as desired from among the starting materials for forming the photoreceptive layer described above. It will be done. As the starting material for such introduction of atoms (OCN), most of the gaseous substances or gasified substances whose constituent atoms are at least atoms (OCN) can be used.

Specifically, for example, oxygen (02), ozone (03), -
Nitrogen oxide (No), nitrogen dioxide (No2), -nitrogen dioxide (N20), nitrogen sesquioxide (N203), trinitrogen tetraoxide (N204), nitrogen pentoxide (N20S), nitrogen dioxide (NO3) Silicon atoms (Si ) and oxygen atom (0)
and a hydrogen atom (H) as constituent atoms, for example, disiloxane (H3SiO3iH3), disiloxane (B3
Lower siloxanes such as SiO3iH20S iH3), methane (CH4), ethane (C2H&), propane (
C3He) + n-Buta7, (n-C,4H+o)
, C1-5 saturated hydrocarbons such as pentane (CsH+z), ethylene (C2H4), propylene (C3H6)
, butene-1 (C4He) + butene-2 (C4H8),
Ethylene hydrocarbons having 2 to 5 carbon atoms such as inbutylene (C4H8) and pentene (C5HIo), acetylene (,
C2) (2) + Acetylenic hydrocarbons having 2 to 4 carbon atoms such as methylacetylene (C3H4) and butyne (CA H&), nitrogen (N2), ammonia (NH3), hydrazine (H2NNH2), hydrogen azide (HN3N) )3,
Examples include ammonium azide (NH4N), nitrogen trifluoride (N3N), nitrogen tetrafluoride (F4N2), etc. In the case of sputtering, atoms (O
As starting materials for the introduction of CN), in addition to the above-mentioned gasifiable starting materials listed for the glow discharge method, as solidified starting materials 5i02. Examples include Si3N4 and carbon black. These are used as sputtering targets together with targets such as Si.

The thickness of the surface layer with antireflection function is determined as follows.

When the refractive index of the material of the surface layer is n and the wavelength of the irradiated light is d, the thickness d of the surface layer having an antireflection function is preferably as follows.

Further, as the material for the surface layer, a material having a refractive index of n=na is optimal, where na is the refractive index of the photosensitive layer on which the surface layer is deposited.

Considering such optical conditions, the thickness of the antireflection layer is preferably 0.05 to 2 gm, assuming that the wavelength of the exposure light is in the wavelength range from near infrared to visible light. be.

In the present invention, materials that can be effectively used as the material for the surface layer having the function of anti-reflection 1 include, for example, Mg
F 2 , A 1203 , Z r 02 , T
IO2ZnS, Ce07, CeF2. 5i02
.

Sio, Ta705, AlF3, NaF.

Inorganic fluorides, inorganic oxides and inorganic nitrides such as 5ijN4,
The composition is polyvinyl chloride, polyamide resin, polyimide resin, vinylidene fluoride, melamine resin, epoxy resin,
Examples include organic compounds such as phenolic resin and cellulose acetate.

In order to achieve the purpose of the present invention more effectively and easily, these materials can be used by vapor deposition method, sputtering method, plasma vapor phase method (CPCVD method), photo-CVD method, because the layer thickness can be precisely controlled at the optical level. method, thermal CVD method, and coating method.

Next, specific examples of the multilayered light receiving member according to the present invention will be shown.

The light-receiving member 1ooo shown in FIG.
A photoreceptive layer 1002 is provided thereon, and the photoreceptor layer 1002 has a charge injection prevention layer 1003, a photosensitive layer 1004, and so on from the support 1001 side. It is composed of a surface layer 1005.

The support 1001 may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr,
Stainless steel, AI, Cr, Mo.

Examples include metals such as Au, Nb, Ta, V, Ti, Pt, and Pd, and alloys thereof.

Examples of the electrically insulating support include polyester, polyethylene, polycarbonate, cellulose, acetate, polypropylene, polyvinyl 11ide, polyvinylidene chloride,
Films or sheets of synthetic resins such as polystyrene and polyamide, glass, ceramics, paper, etc. are commonly used.

Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, NiCr is applied to its surface.

AI, Cr, Mo, Au, Ir, Nb, Ta.

V, Ti, Pt, Pd, In707.5n02.

Conductivity is imparted by providing a film made of I To (I n203 +S n02 ), or a 1m film such as polyester film, NiCr, AI, Ag, Pd, Zn, Ni.

Au, Cr, Nto, Ir, Nb, Ta, , V, Ti,
A thin film of metal such as Pt is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the metal, and the surface is made conductive.
given. The shape of the support body is cylindrical, belt-shaped,
The light-receiving member 1000 in FIG.
If used as an electro-photographic image forming member, it is desirable to have an endless belt shape or a cylindrical shape for continuous copying. The thickness of the support is determined as appropriate so that the desired light-receiving member is formed, but if flexibility is required as a light-receiving member, the support can sufficiently function as a support. It is made as thin as possible within this range. However, in such a case, from the viewpoints of manufacturing and handling of the support, mechanical strength, etc., it is preferably 10p or less.

The charge injection prevention layer 1003 is provided for the purpose of preventing the injection of charges from the support 1001 side into the photosensitive layer 1004 and increasing the resistance in view.

At the time of charge injection, the first layer 1003 of 11 is A-3i (hereinafter rA-S) containing a hydrogen atom or/and a halogen atom (X).
i (denoted as H, X) J) and contains a substance (C) that controls conductivity.

The substance (C) that controls conductivity contained in the charge injection prevention layer 1003 can be impurities known in the semiconductor field, and in the present invention, Si has p-type conductivity. Examples include a p-type impurity that provides a p-type impurity, and an n-type impurity that provides an n-type conductivity. in particular,
As p-type impurities, atoms belonging to Group ■ of the periodic table (No.
group atoms) such as B (boron), AI (aluminum),
There are Ga (gallium), In (indium), and TI (thallium) A4, and those that are particularly preferably used are B,
It is Ga.

As n-type impurities, atoms belonging to the wIjv group of the periodic table (
Group V atoms), such as P (phosphorus), As (arsenic),
Sb (antimony), Bi (bismuth), etc.
Particularly preferably used are P and As.

It is.

In the present invention, the content of the substance (C) that controls conductivity contained in the charge injection prevention layer 1003 is determined depending on the required charge injection prevention property or the charge injection prevention layer 1003 on the support 1001. When provided in direct contact with the support 1001, the relationship with the characteristics at the contact interface with the support 1001, etc.
It can be selected as appropriate depending on the organic relationship. or,
In addition to being provided in direct contact with the charge injection prevention layer, 4. The content of the substance that controls the conduction characteristics is appropriately selected, taking into account the conductivity and the relationship with the characteristics at the contact interface with the original layer region.

In the present invention, the content of the substance controlling conductivity contained in the charge injection prevention layer is preferably 0.001
-5X104 atomic ppm, more preferably 0.5 to lXl0. atomicppm, @ suitably 1
It is desirable that the concentration be 5 to 5 XIO3a tomic ppm.

In the present invention, the material (
The content of C) is preferably 30 atomic pp
m or more, more preferably 50 at.

mic ppm or more, optimally 100 atomic
ppm or more, for example, if the substance (C) to be contained is the above-mentioned p-type impurity, it will be injected from the support side into the photosensitive layer when the free surface of the photoreceptive layer is charged to Φ polarity. The substance (C) to be contained can more effectively block the movement of electrons.
In the case of type impurities, it is possible to more effectively prevent the movement of holes injected from the support side into the photosensitive layer when the free surface of the photoreceptive layer is charged to ○ polarity.

The layer thickness of the charge injection prevention layer 1003 is preferably 30 or more.
10 people, more preferably 40 people to 8 people, optimally 50 people ~
It is desirable that it be used for 5.

The photosensitive layer 1004 is composed of A-S i (H, The layer thickness of 1004 is preferably 1 to 11
00 pL+, preferably 1 to 80 pm.

The optimum range is preferably 2 to 50 gm.

The photosensitive layer 1004 may contain a substance that controls conduction characteristics with a polarity different from the polarity of the substance that controls conduction characteristics contained in the charge injection prevention layer 1003, or a substance with conduction characteristics of the same polarity. layer 1 during charge injection.
It may be contained in an amount much smaller than the actual amount contained in 003.

In such a case, the content of the substance controlling the conduction characteristics contained in the photosensitive layer 1004 may be appropriately determined according to the polarity and content of the substance contained in the charge injection prevention layer 1003. However, it is preferably 0.001 to 1001000 atomic ppm, more preferably 0.05-05-500 atomic ppm, and optimally 0.1 to 200 atomic ppm.

In the present invention, when the charge injection barrier 11 layer 1003 and the photosensitive layer 1004 contain the same kind of substance that controls conductivity, the content in the photosensitive layer 1004 is preferably 30 atomic ppm or less. is desirable.

In the present invention, the charge injection prevention layer 1003 and the photosensitive layer 10
The amount of hydrogen atoms (H) or the amount of halogen atoms (X) contained in 04, or the sum of the amounts of hydrogen atoms and halogen atoms (H
+X) is preferably 1 to 40 atomic %, more preferably 5 to 30 atomic %.

Examples of the halogen atom (X) include F, CI, and Br.

(2), and among these, F and CI are preferred.

In the light receiving member shown in FIG.
Instead of 003, a so-called barrier layer made of an electrically insulating material may be provided. Alternatively, the barrier layer and the charge injection prevention layer 1003 may be used together.

As the barrier layer forming material, A or 203,5inLSi,
Examples include inorganic electrical insulating materials such as +N4 and organic electrical insulating materials such as polycarbonate.

Examples of the present invention will be described below.

Example 1 In this example, a spot system 80 lumen semiconductor laser (wavelength 780 nm) was used. Therefore, the cylindrical An support (length L) on which A-3i:H is deposited is 357 mm.
A spiral groove with a diameter (r) of 80 mm) was created using a lathe. The cross-sectional shape of the groove at this time is shown in FIG. 11 CB).

A charge injection barrier 11 layer and a photosensitive layer were deposited on this An support using the apparatus shown in FIG. 12 in the following manner.

First, the configuration of the device will be explained. 1201 is a high frequency power supply, 1
202 is a matching box, 1203 is a diffusion pump and a mechanical booster pump, 1204 is a motor for rotating the A part 1 support, 1205 is an An support, 1206 is a heater for heating the An support 1207 is a gas introduction pipe, 12
08 is a cathode electrode for high frequency introduction, 1209 is a shield plate, 1210 is a power source for a heater, 1221~1225°1
241-1245 are valves, 1231-1235 are mass flow controllers, 1251-1255 are regulators, 1261 is hydrogen (H2) cylinder, 1262 is silane (SjHQ) cylinder, 1263 is Ziporan (B2H)
6) Cylinder, 1264 is a nitrogen oxide (NO) cylinder, 12
67 is a methane (CH4) cylinder.

Next, the manufacturing procedure will be explained. All the main valves of cylinders 1261 to 1265 were closed, and the pressure inside the deposition apparatus was reduced to to' Torr using all mass flow controllers and valves of 131t and diffusion pump 1203. At the same time, the 1205 AfL support was heated to 250"C by the 1206 heater and kept constant at 250"C.12
After the temperature of the AfL support of 05 becomes constant at 250 ° C. 1221~1225.1241~1245.1251~
Close the valve 1255, open the main valves of cylinders 1261 to 1265, and replace the diffusion pump 1203 with a mechanical booster pump. The secondary pressure of the regulator control valves 1251 to 1255 was set to 1°5 Kg/cm'. 1231 mass flow controller to 3003C
CM was set, and the valves 1241 and 1221 were opened in sequence to introduce H2 gas into the deposition apparatus.

Next, set the SiH4 gas in 1261 and the mass flow controller in 1232 to 150! Set to jCCM, H2
SiH4 gas was introduced into the deposition apparatus in the same manner as the gas introduction. Next, set the 1233 (7) mass flow controller so that the B2H6 gas flow rate of 1263 becomes 1600 Vol ppm with respect to the SiH4 gas flow rate,
B2H6 gas was introduced into the deposition apparatus in the same manner as the introduction of H2 gas.

Next, set the mass flow controller of 1234 so that the No gas flow rate of 1264 is 3.4 Vo1% with respect to the SiH4 gas flow rate, and introduce No gas into the deposition apparatus using the same operation as introducing H2 gas. Introduced.

When the internal pressure in the deposition apparatus stabilizes at 0.2 Torr, turn on the high frequency power supply 1201 and adjust the munching box 1202 to generate a glow discharge between the AM support 1205 and the cathode electrode 1208. let me,
High frequency power is 150W, A-3i:H layer (
After depositing P-type A-3i:H layer containing B (charge injection prevention layer) and depositing A-3t:H (P-type) with a thickness of 5 Kawada, without turning off the discharge, 1223 valve? Close B
Stop the influx of 2H2.

And 201Lm thick A-5i with high frequency power of 150W:
A non-doped H layer was deposited (photosensitive layer). Thereafter, the high frequency power supply and gas valves were all closed, the deposition apparatus was evacuated, the temperature of the An support was lowered to room temperature, and the support with the photosensitive layer formed thereon was taken out.

The photosensitive layer was formed on the support L in the same manner,
22 pieces were made.

Next, the 1261 hydrogen (H layer) cylinder was
A r) Replace with gas cylinder, clean the deposition device,
A surface layer material shown in Table 1 (Condition No. 1O1) is applied all over the cathode electrode. One of the devices with the photosensitive layer formed thereon is installed, and the pressure inside the deposition device is sufficiently reduced using a diffusion pump. Thereafter, argon gas was introduced to 0.015 Torr, a glow discharge was caused with a high frequency power of 150 W, and the surface material was sputtered to deposit the surface layer shown in Table 1 (Condition No. 1 O1) on the support. (Sample No. 1) Similarly, surface layers were deposited on the remaining 21 wires under the conditions shown in Table 1 (rows 1 No. 102 to 122). (Samples Nos. 102 to 122) As shown in FIGS. 11(B) and 11(C), the surface of the photosensitive layer and the surface of the support were non-parallel. In this case, the difference in average layer thickness between the center and both ends of the An support was 2 m.

For the following 1-22 types of electrophotographic light-receiving members, an anticonductor laser with a wavelength of 780 nm was used with a spot diameter of 80 pLm.
Image exposure is carried out using the apparatus shown in Fig. 13, and then it is developed and
An image was obtained by transfer.

In this case, no interference fringe pattern was observed, and a product showing electrophotographic characteristics sufficient for practical use was obtained.

Example 2 The surface of a cylindrical AI support was machined using a lathe as shown in FIG. 14.

A light-receiving member for electrophotography of A-3i:H was produced on each of the cylindrical An supports under the same conditions as in Example 1.

This electrophotographic light-receiving member was subjected to image exposure using the apparatus shown in FIG. 13 in the same manner as in Example 1, and was developed and transferred to obtain an image.

No interference fringes were observed in the transferred image in this case, and the characteristics were sufficient for practical use.

Example 3 An electrophotographic light-receiving member was formed on a cylindrical An support with the surface properties shown in FIGS. 15 and 16 under the conditions shown in Table 2.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and then developed, transferred, and fixed to obtain a visible image on plain paper. Such an image forming process was continuously repeated 10,000 times.

In this case, no interference fringes were observed in any of the images obtained, and the characteristics were sufficient for practical use. Also, there was no difference between the initial image and the 100,000th image, and the images were of high quality.

Example 4 Cylindrical surface A shown in FIGS. 15 and 16! :
An electrophotographic light-receiving member was formed on the L support under the conditions shown in Table 3.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure apparatus as in Example 1, and were developed, transferred, and fixed to obtain a good image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 5 An electrophotographic light-receiving member was formed on a cylindrical AM support having the surface properties shown in FIGS. 15 and 16 under the conditions shown in Table 4.

These electrophotographic light-receiving members were subjected to one-image exposure using the same image and exposure apparatus as in Example 1, and then developed and
A visible image was obtained on plain paper by transferring and fixing.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

Example 6 A light-receiving member for electrophotography was formed using the cylindrical A-pattern support having the surface properties shown in FIGS. 15 and 16 under the conditions shown in Table 5.

These electrophotographic light-receiving members were subjected to image exposure using the same image exposure method as in Example 1, followed by development, transfer, and
It was fixed to obtain a visible image on plain paper.

No interference fringes were observed in the image obtained in this case, and the image had sufficient characteristics for practical use.

[Effects of the Invention] As described in detail in 1-1, according to the present invention, the present invention is suitable for image formation using coherent monochromatic light, easy to manage manufacturing, and reduces interference fringes that appear during image formation. It can simultaneously and completely eliminate the appearance of spots during pattern and reversal development, and has a further n1 ha, high photosensitivity, high SN ratio characteristics, and good electrical contact with the support. It is possible to provide a light-receiving member that is suitable for digital image recording, reduces light reflection on the surface, and can efficiently utilize incident light.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a general explanatory diagram of interference fringes. FIG. 2 is an explanatory diagram of interference fringes in the case of a multilayer light receiving member. FIG. 3 is an explanatory diagram of interference fringes due to scattered light. FIG. 4 is an explanatory diagram of interference fringes due to scattered light in the case of a multilayer light receiving member. FIG. 5 is an explanatory diagram of interference fringes when the interface between each layer of the light-receiving member is 11 rows. Figure 6 shows the number of drying points when the interfaces of each layer of the light-receiving member are non-parallel.
FIG. 6 is an explanatory diagram showing that no stripes appear. FIG. 7 is an explanatory diagram of a comparison of reflected light intensity when the interfaces of each layer of the light-receiving member are parallel and non-parallel. FIG. 8 is an explanatory diagram showing that no interference fringes appear when the interfaces of each layer are non-parallel. (Figures 9(A) and 9(B) are representative supports, respectively!
It is an explanatory view of a surface state. FIG. 10 is an explanatory diagram of the layer structure of the light receiving member. FIG. 12 is an explanatory diagram of a photoreceptive layer deposition apparatus used in Examples. FIG. 13 shows an image exposure apparatus used in the examples. Figures 11, t514, 15, and 16 show the surface conditions of the AfL support used in the examples! It is an explanatory diagram of a fish. ], OOO, 1100... Light receiving member 1002.1106... Light receiving layer 100
1・・・・・・・・・・・・・・・・・・・・・・・・
AM support 1003・・・・・・・・・・・・・・・
......Charge injection prevention layer 1004...
・・・・・・・・・・・・・・・Photosensitive layer 1005
・・・・・・・・・・・・・・・・・・・・・・・・Surface layer 1301・・・・・・・・・・・・・・・・・・
...Light receiving member for electrophotography 1302...
・・・・・・・・・・・・・・・・・・Semiconductor laser 1303・・・・・・・・・・・・・・・・・・
・・・fθ Relen 1304・・・・・・・・・・・・・・・
・・・・・・・・・・・・Polygon mirror】305...
・・・・・・・・・・・・・・・・・・・Plan view of exposure apparatus 1306・・・・・・・・・・・・・・・・
......Side view of the exposure device 3 Figure 4 Figure 5 Figure 6 Side (D) 4 pieces 5E Figure 7 (C) (B) (C) FI device +! '￥ 8 Figure IT9 Figure 14 Figure Cμm) Figure 16 Figure 4 m) 350-

Claims (10)

[Claims] (1) The cross-sectional shape at a predetermined cutting position is a convex shape in which a main peak and a sub-peak are superimposed, and is made of a support having many convex portions formed on its surface and an amorphous material containing 5 silicon atoms. a layer in which at least a part of the layer region is photosensitive;
a light-receiving layer consisting of a surface layer having an antireflection function; and the layer in which at least a part of the layer region is photosensitive is composed of oxygen atoms, carbon atoms, and nitrogen atoms. A light-receiving member characterized by containing at least one selected one. (2) The light-receiving member according to claim 1, wherein the layer region has photoconductivity. (3) The light-receiving member according to claim 1, wherein the light-receiving layer has a multilayer structure. (4) The light receiving member according to claim 1, wherein the convex portions are regularly arranged. (5) The light receiving member according to claim 1, wherein the convex portions are arranged periodically. (6) The light-receiving member according to claim 1, wherein each of the convex portions has the same shape approximately to the −th order. (7) The light-receiving member according to claim 1, wherein the convex portion is characterized by a sub-peak. (8) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is symmetrical about the main peak. (9) The light-receiving member according to claim 1, wherein the cross-sectional shape of the convex portion is asymmetrical with respect to the main peak. (10) The light receiving member according to claim 1, wherein the convex portion is formed by mechanical processing.