JPS61223179A - 炭素層間化合物の合成法 - Google Patents
炭素層間化合物の合成法Info
- Publication number
- JPS61223179A JPS61223179A JP60064572A JP6457285A JPS61223179A JP S61223179 A JPS61223179 A JP S61223179A JP 60064572 A JP60064572 A JP 60064572A JP 6457285 A JP6457285 A JP 6457285A JP S61223179 A JPS61223179 A JP S61223179A
- Authority
- JP
- Japan
- Prior art keywords
- carbon
- layers
- deposit
- metal
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 35
- 150000001875 compounds Chemical class 0.000 title claims description 19
- 238000000034 method Methods 0.000 title claims description 11
- 230000002194 synthesizing effect Effects 0.000 title claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 52
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 13
- 239000002184 metal Substances 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 6
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 5
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 5
- 238000009830 intercalation Methods 0.000 claims description 16
- 230000002687 intercalation Effects 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 abstract description 30
- CRHIAMBJMSSNNM-UHFFFAOYSA-N tetraphenylstannane Chemical compound C1=CC=CC=C1[Sn](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 CRHIAMBJMSSNNM-UHFFFAOYSA-N 0.000 abstract description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 239000002245 particle Substances 0.000 abstract 2
- 238000005336 cracking Methods 0.000 abstract 1
- -1 for example Natural products 0.000 abstract 1
- 238000004227 thermal cracking Methods 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 description 16
- 239000010439 graphite Substances 0.000 description 16
- 239000010410 layer Substances 0.000 description 14
- 239000011521 glass Substances 0.000 description 7
- 239000002932 luster Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 150000002736 metal compounds Chemical class 0.000 description 6
- 239000012776 electronic material Substances 0.000 description 3
- 230000001747 exhibiting effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XNMQEEKYCVKGBD-UHFFFAOYSA-N 2-butyne Chemical compound CC#CC XNMQEEKYCVKGBD-UHFFFAOYSA-N 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 108091006149 Electron carriers Proteins 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- JRXXLCKWQFKACW-UHFFFAOYSA-N biphenylacetylene Chemical group C1=CC=CC=C1C#CC1=CC=CC=C1 JRXXLCKWQFKACW-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- YUWFEBAXEOLKSG-UHFFFAOYSA-N hexamethylbenzene Chemical compound CC1=C(C)C(C)=C(C)C(C)=C1C YUWFEBAXEOLKSG-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021382 natural graphite Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000001388 picenyl group Chemical group C1(=CC=CC2=CC=C3C4=CC=C5C=CC=CC5=C4C=CC3=C21)* 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 235000011835 quiches Nutrition 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- WBJSMHDYLOJVKC-UHFFFAOYSA-N tetraphenyllead Chemical compound C1=CC=CC=C1[Pb](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 WBJSMHDYLOJVKC-UHFFFAOYSA-N 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1229—Composition of the substrate
- C23C18/1245—Inorganic substrates other than metallic
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60064572A JPS61223179A (ja) | 1985-03-26 | 1985-03-26 | 炭素層間化合物の合成法 |
EP86103833A EP0201696B1 (en) | 1985-03-20 | 1986-03-20 | Production of carbon films |
EP88113145A EP0305790B1 (en) | 1985-03-20 | 1986-03-20 | Production of graphite intercalation compound and doped carbon films |
DE8686103833T DE3678030D1 (de) | 1985-03-20 | 1986-03-20 | Herstellung von kohlenstoffschichten. |
DE8888113145T DE3687529T2 (de) | 1985-03-20 | 1986-03-20 | Herstellung von graphiteinlagerungsverbindung und gedopte carbonfilme. |
US07/190,353 US4946370A (en) | 1985-03-20 | 1988-05-05 | Method for the production of carbon films having an oriented graphite structure |
US07/344,961 US5049409A (en) | 1985-03-20 | 1989-04-28 | Method for metal or metal compounds inserted between adjacent graphite layers |
US07/706,006 US5273778A (en) | 1985-03-20 | 1991-05-28 | Method for producing graphite intercalation compound |
US08/051,441 US5404837A (en) | 1985-03-20 | 1993-04-22 | Method for preparing a graphite intercalation compound having a metal or metal compounds inserted between adjacent graphite layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60064572A JPS61223179A (ja) | 1985-03-26 | 1985-03-26 | 炭素層間化合物の合成法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61223179A true JPS61223179A (ja) | 1986-10-03 |
JPH0413425B2 JPH0413425B2 (enrdf_load_stackoverflow) | 1992-03-09 |
Family
ID=13262071
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60064572A Granted JPS61223179A (ja) | 1985-03-20 | 1985-03-26 | 炭素層間化合物の合成法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS61223179A (enrdf_load_stackoverflow) |
-
1985
- 1985-03-26 JP JP60064572A patent/JPS61223179A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0413425B2 (enrdf_load_stackoverflow) | 1992-03-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3172774A (en) | Method of forming composite graphite coated article | |
EP0305790B1 (en) | Production of graphite intercalation compound and doped carbon films | |
US6149975A (en) | Potassium-containing thin film and process for producing the same | |
US4664944A (en) | Deposition method for producing silicon carbide high-temperature semiconductors | |
US3778296A (en) | Process for the production of silicon carbide whiskers | |
JP3611640B2 (ja) | 第8族元素類の成膜法およびこれに使用する原料化合物 | |
JPH05254808A (ja) | 窒化ほう素の作製方法 | |
JPS61223179A (ja) | 炭素層間化合物の合成法 | |
JPH0977592A (ja) | ビスマス層状強誘電体薄膜の製造方法 | |
JP2803396B2 (ja) | ダイヤモンド薄膜合成装置 | |
JPH064520B2 (ja) | 酸化物薄膜の製造法 | |
US3556834A (en) | Low temperature method for producing amorphous boron-carbon deposits | |
JPS62202809A (ja) | 熱分解黒鉛の製造方法 | |
JPH06115913A (ja) | 炭窒化ほう素の合成法 | |
JPS61223186A (ja) | 炭素薄膜の製造方法 | |
JPH0321518B2 (enrdf_load_stackoverflow) | ||
JPS634069A (ja) | 熱分解黒鉛の製造方法 | |
JPS6110090A (ja) | 六方晶窒化ホウ素膜の製造方法 | |
JPH048366B2 (enrdf_load_stackoverflow) | ||
JPH01252780A (ja) | 窒化ホウ素被覆体及びその製造方法 | |
Devi et al. | Boron nitride thin films on Si (100) by metal organic chemical vapour deposition | |
JPS62502755A (ja) | ルテニウム塩を基質とする薄層、その製造及び、特に、半導体及び/又は保護沈着物の組立又は形成の実施におけるその応用 | |
JPS6390833A (ja) | 2族および6族からなる化合物薄膜の製造方法 | |
JP2579926B2 (ja) | ダイヤモンドの製造方法 | |
JPH0465310A (ja) | シリコンカーバイド薄膜の堆積方法 |