JPH0372600B2 - - Google Patents

Info

Publication number
JPH0372600B2
JPH0372600B2 JP62251565A JP25156587A JPH0372600B2 JP H0372600 B2 JPH0372600 B2 JP H0372600B2 JP 62251565 A JP62251565 A JP 62251565A JP 25156587 A JP25156587 A JP 25156587A JP H0372600 B2 JPH0372600 B2 JP H0372600B2
Authority
JP
Japan
Prior art keywords
diamond
raw material
gas
cvd
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP62251565A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0196094A (ja
Inventor
Masamori Iida
Tateo Kurosu
Takeshi Okano
Yoichi Hirose
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokai University
Original Assignee
Tokai University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokai University filed Critical Tokai University
Priority to JP25156587A priority Critical patent/JPH0196094A/ja
Publication of JPH0196094A publication Critical patent/JPH0196094A/ja
Publication of JPH0372600B2 publication Critical patent/JPH0372600B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
JP25156587A 1987-10-07 1987-10-07 Ｐ型半導体ダイヤモンド膜の製造方法 Granted JPH0196094A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25156587A JPH0196094A (ja) 1987-10-07 1987-10-07 Ｐ型半導体ダイヤモンド膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25156587A JPH0196094A (ja) 1987-10-07 1987-10-07 Ｐ型半導体ダイヤモンド膜の製造方法

Publications (2)

Publication Number Publication Date
JPH0196094A JPH0196094A (ja) 1989-04-14
JPH0372600B2 true JPH0372600B2 (enrdf_load_stackoverflow) 1991-11-19

Family

ID=17224707

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25156587A Granted JPH0196094A (ja) 1987-10-07 1987-10-07 Ｐ型半導体ダイヤモンド膜の製造方法

Country Status (1)

Country Link
JP (1) JPH0196094A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03205398A (ja) * 1989-12-30 1991-09-06 Canon Inc ダイヤモンドの製造方法
JP4412411B2 (ja) * 2007-08-10 2010-02-10 三菱電機株式会社 炭化珪素半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5587425A (en) * 1978-12-26 1980-07-02 Tohoku Metal Ind Ltd Doping method for epitaxial layer of semiconductor
JPS5822861A (ja) * 1981-08-03 1983-02-10 三菱電機株式会社 減圧装置
JPS6270295A (ja) * 1985-09-24 1987-03-31 Sumitomo Electric Ind Ltd ｎ型半導体ダイヤモンド膜の製造法

Also Published As

Publication number Publication date
JPH0196094A (ja) 1989-04-14

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