JPS61220488A - 半導体レ−ザ装置 - Google Patents
半導体レ−ザ装置Info
- Publication number
- JPS61220488A JPS61220488A JP6230785A JP6230785A JPS61220488A JP S61220488 A JPS61220488 A JP S61220488A JP 6230785 A JP6230785 A JP 6230785A JP 6230785 A JP6230785 A JP 6230785A JP S61220488 A JPS61220488 A JP S61220488A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- refractive index
- coating
- gaalas
- coating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000010410 layer Substances 0.000 claims abstract description 122
- 239000011247 coating layer Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 230000000694 effects Effects 0.000 claims abstract description 10
- 238000005253 cladding Methods 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 abstract description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 238000003776 cleavage reaction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 230000007017 scission Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 description 20
- 230000003287 optical effect Effects 0.000 description 17
- 239000013078 crystal Substances 0.000 description 11
- 230000010355 oscillation Effects 0.000 description 10
- 238000009826 distribution Methods 0.000 description 6
- 201000009310 astigmatism Diseases 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 241000700560 Molluscum contagiosum virus Species 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 101100215641 Aeromonas salmonicida ash3 gene Proteins 0.000 description 1
- 241001139376 Allas Species 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- SPVXKVOXSXTJOY-UHFFFAOYSA-N selane Chemical group [SeH2] SPVXKVOXSXTJOY-UHFFFAOYSA-N 0.000 description 1
- 229910000058 selane Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6230785A JPS61220488A (ja) | 1985-03-27 | 1985-03-27 | 半導体レ−ザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6230785A JPS61220488A (ja) | 1985-03-27 | 1985-03-27 | 半導体レ−ザ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61220488A true JPS61220488A (ja) | 1986-09-30 |
| JPH0574957B2 JPH0574957B2 (enrdf_load_stackoverflow) | 1993-10-19 |
Family
ID=13196347
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6230785A Granted JPS61220488A (ja) | 1985-03-27 | 1985-03-27 | 半導体レ−ザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61220488A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5761232A (en) * | 1995-04-28 | 1998-06-02 | Mitsubishi Denki Kabushiki Kaisha | Double heterojunction semiconductor laser having improved light confinement |
-
1985
- 1985-03-27 JP JP6230785A patent/JPS61220488A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5761232A (en) * | 1995-04-28 | 1998-06-02 | Mitsubishi Denki Kabushiki Kaisha | Double heterojunction semiconductor laser having improved light confinement |
| US5870419A (en) * | 1995-04-28 | 1999-02-09 | Mitsubishi Denki Kabushiki Kaisha | Double heterojunction semiconductor laser having improved light confinement |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0574957B2 (enrdf_load_stackoverflow) | 1993-10-19 |
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