JPS61214483A - 集積型太陽電池の製造方法 - Google Patents

集積型太陽電池の製造方法

Info

Publication number
JPS61214483A
JPS61214483A JP60053255A JP5325585A JPS61214483A JP S61214483 A JPS61214483 A JP S61214483A JP 60053255 A JP60053255 A JP 60053255A JP 5325585 A JP5325585 A JP 5325585A JP S61214483 A JPS61214483 A JP S61214483A
Authority
JP
Japan
Prior art keywords
layer
electrode
solar cell
manufacturing
integrated solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60053255A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519990B2 (enrdf_load_stackoverflow
Inventor
Kenji Nakatani
健司 中谷
Tetsuo Sato
哲生 佐藤
Hiroshi Okaniwa
宏 岡庭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Teijin Ltd
Original Assignee
Teijin Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teijin Ltd filed Critical Teijin Ltd
Priority to JP60053255A priority Critical patent/JPS61214483A/ja
Priority to US06/828,197 priority patent/US4697041A/en
Priority to FR868602039A priority patent/FR2577716B1/fr
Priority to DE19863604894 priority patent/DE3604894A1/de
Publication of JPS61214483A publication Critical patent/JPS61214483A/ja
Publication of JPH0519990B2 publication Critical patent/JPH0519990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
    • H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
JP60053255A 1985-02-15 1985-03-19 集積型太陽電池の製造方法 Granted JPS61214483A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP60053255A JPS61214483A (ja) 1985-03-19 1985-03-19 集積型太陽電池の製造方法
US06/828,197 US4697041A (en) 1985-02-15 1986-02-10 Integrated solar cells
FR868602039A FR2577716B1 (fr) 1985-02-15 1986-02-14 Piles solaires integrees et leur procede de fabrication
DE19863604894 DE3604894A1 (de) 1985-02-15 1986-02-15 Integrierte solarzellen und verfahren zu ihrer herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60053255A JPS61214483A (ja) 1985-03-19 1985-03-19 集積型太陽電池の製造方法

Publications (2)

Publication Number Publication Date
JPS61214483A true JPS61214483A (ja) 1986-09-24
JPH0519990B2 JPH0519990B2 (enrdf_load_stackoverflow) 1993-03-18

Family

ID=12937674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60053255A Granted JPS61214483A (ja) 1985-02-15 1985-03-19 集積型太陽電池の製造方法

Country Status (1)

Country Link
JP (1) JPS61214483A (enrdf_load_stackoverflow)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02105583A (ja) * 1988-10-14 1990-04-18 Fuji Electric Co Ltd 薄膜太陽電池
JPH06132552A (ja) * 1992-10-19 1994-05-13 Canon Inc 光起電力素子とその製造方法
JP2000353814A (ja) * 1999-06-10 2000-12-19 Fuji Electric Co Ltd 薄膜太陽電池の製造方法及び同薄膜の成膜状態監視装置
US7052998B2 (en) 2003-09-26 2006-05-30 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
JP2009021563A (ja) * 2007-06-05 2009-01-29 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JP2009283982A (ja) * 2009-08-31 2009-12-03 Sanyo Electric Co Ltd 薄膜太陽電池モジュールの製造方法
JP2010093309A (ja) * 2010-01-29 2010-04-22 Sanyo Electric Co Ltd 薄膜太陽電池モジュールの製造方法
JP2010093308A (ja) * 2010-01-29 2010-04-22 Sanyo Electric Co Ltd 薄膜太陽電池モジュールの製造方法
US8207441B2 (en) 2006-02-23 2012-06-26 Sanyo Electric Co., Ltd. Photovoltaic apparatus and method of manufacturing the same
US8362354B2 (en) 2007-07-09 2013-01-29 Sanyo Electric Co., Ltd. Photovoltaic apparatus and method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60101540A (ja) * 1983-11-07 1985-06-05 Nippon Kogaku Kk <Nikon> 投影光学装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60101540A (ja) * 1983-11-07 1985-06-05 Nippon Kogaku Kk <Nikon> 投影光学装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02105583A (ja) * 1988-10-14 1990-04-18 Fuji Electric Co Ltd 薄膜太陽電池
JPH06132552A (ja) * 1992-10-19 1994-05-13 Canon Inc 光起電力素子とその製造方法
JP2000353814A (ja) * 1999-06-10 2000-12-19 Fuji Electric Co Ltd 薄膜太陽電池の製造方法及び同薄膜の成膜状態監視装置
US7052998B2 (en) 2003-09-26 2006-05-30 Sanyo Electric Co., Ltd. Method of manufacturing photovoltaic device
US8207441B2 (en) 2006-02-23 2012-06-26 Sanyo Electric Co., Ltd. Photovoltaic apparatus and method of manufacturing the same
JP2009021563A (ja) * 2007-06-05 2009-01-29 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US8362354B2 (en) 2007-07-09 2013-01-29 Sanyo Electric Co., Ltd. Photovoltaic apparatus and method of manufacturing the same
JP2009283982A (ja) * 2009-08-31 2009-12-03 Sanyo Electric Co Ltd 薄膜太陽電池モジュールの製造方法
JP2010093309A (ja) * 2010-01-29 2010-04-22 Sanyo Electric Co Ltd 薄膜太陽電池モジュールの製造方法
JP2010093308A (ja) * 2010-01-29 2010-04-22 Sanyo Electric Co Ltd 薄膜太陽電池モジュールの製造方法

Also Published As

Publication number Publication date
JPH0519990B2 (enrdf_load_stackoverflow) 1993-03-18

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