JPS61212061A - バイポーラトランジスタの製造方法 - Google Patents

バイポーラトランジスタの製造方法

Info

Publication number
JPS61212061A
JPS61212061A JP60051604A JP5160485A JPS61212061A JP S61212061 A JPS61212061 A JP S61212061A JP 60051604 A JP60051604 A JP 60051604A JP 5160485 A JP5160485 A JP 5160485A JP S61212061 A JPS61212061 A JP S61212061A
Authority
JP
Japan
Prior art keywords
base
layer
region
electrode
serving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60051604A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0422329B2 (enrdf_load_stackoverflow
Inventor
Yasuhiro Shiraki
靖寛 白木
Akitoshi Ishizaka
彰利 石坂
Kiyokazu Nakagawa
清和 中川
Taku Ooshima
卓 大嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP60051604A priority Critical patent/JPS61212061A/ja
Publication of JPS61212061A publication Critical patent/JPS61212061A/ja
Publication of JPH0422329B2 publication Critical patent/JPH0422329B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP60051604A 1985-03-16 1985-03-16 バイポーラトランジスタの製造方法 Granted JPS61212061A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60051604A JPS61212061A (ja) 1985-03-16 1985-03-16 バイポーラトランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60051604A JPS61212061A (ja) 1985-03-16 1985-03-16 バイポーラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS61212061A true JPS61212061A (ja) 1986-09-20
JPH0422329B2 JPH0422329B2 (enrdf_load_stackoverflow) 1992-04-16

Family

ID=12891502

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60051604A Granted JPS61212061A (ja) 1985-03-16 1985-03-16 バイポーラトランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS61212061A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156573A (ja) * 1988-12-09 1990-06-15 Agency Of Ind Science & Technol 半導体装置
US7923751B2 (en) 2003-08-02 2011-04-12 Zetex Plc Bipolar transistor with a low saturation voltage

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887865A (ja) * 1981-11-20 1983-05-25 Nec Corp 金属ベ−ストランジスタ
JPS5893373A (ja) * 1981-11-30 1983-06-03 Nec Corp 半導体装置およびその製造方法
JPS58158455U (ja) * 1982-04-16 1983-10-22 三菱電機株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5887865A (ja) * 1981-11-20 1983-05-25 Nec Corp 金属ベ−ストランジスタ
JPS5893373A (ja) * 1981-11-30 1983-06-03 Nec Corp 半導体装置およびその製造方法
JPS58158455U (ja) * 1982-04-16 1983-10-22 三菱電機株式会社 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02156573A (ja) * 1988-12-09 1990-06-15 Agency Of Ind Science & Technol 半導体装置
US7923751B2 (en) 2003-08-02 2011-04-12 Zetex Plc Bipolar transistor with a low saturation voltage

Also Published As

Publication number Publication date
JPH0422329B2 (enrdf_load_stackoverflow) 1992-04-16

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term