JPS6121197B2 - - Google Patents
Info
- Publication number
- JPS6121197B2 JPS6121197B2 JP54121279A JP12127979A JPS6121197B2 JP S6121197 B2 JPS6121197 B2 JP S6121197B2 JP 54121279 A JP54121279 A JP 54121279A JP 12127979 A JP12127979 A JP 12127979A JP S6121197 B2 JPS6121197 B2 JP S6121197B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- layer
- silicon
- growth
- sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12127979A JPS5645897A (en) | 1979-09-19 | 1979-09-19 | Manufacture of silicon carbide crystal |
| DE3002671A DE3002671C2 (de) | 1979-01-25 | 1980-01-25 | Verfahren zur Herstellung eines Siliciumcarbidsubstrats |
| US06/369,911 US4582561A (en) | 1979-01-25 | 1982-04-19 | Method for making a silicon carbide substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12127979A JPS5645897A (en) | 1979-09-19 | 1979-09-19 | Manufacture of silicon carbide crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5645897A JPS5645897A (en) | 1981-04-25 |
| JPS6121197B2 true JPS6121197B2 (esLanguage) | 1986-05-26 |
Family
ID=14807313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12127979A Granted JPS5645897A (en) | 1979-01-25 | 1979-09-19 | Manufacture of silicon carbide crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5645897A (esLanguage) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63283014A (ja) * | 1987-04-28 | 1988-11-18 | Sharp Corp | 炭化珪素半導体素子 |
| DE4234508C2 (de) * | 1992-10-13 | 1994-12-22 | Cs Halbleiter Solartech | Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht |
| FR2786208B1 (fr) * | 1998-11-25 | 2001-02-09 | Centre Nat Rech Scient | Procede de croissance cristalline sur substrat et reacteur pour sa mise en oeuvre |
| DE112018001768B4 (de) * | 2017-03-28 | 2024-12-12 | Mitsubishi Electric Corporation | Siliciumcarbid-substrat, verfahren zum herstellen eines siliciumcarbid-substrats und verfahren zum herstellen einer siliciumcarbid-halbleitervorrichtung |
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1979
- 1979-09-19 JP JP12127979A patent/JPS5645897A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5645897A (en) | 1981-04-25 |