JPS6121194B2 - - Google Patents
Info
- Publication number
- JPS6121194B2 JPS6121194B2 JP19306081A JP19306081A JPS6121194B2 JP S6121194 B2 JPS6121194 B2 JP S6121194B2 JP 19306081 A JP19306081 A JP 19306081A JP 19306081 A JP19306081 A JP 19306081A JP S6121194 B2 JPS6121194 B2 JP S6121194B2
- Authority
- JP
- Japan
- Prior art keywords
- ampoule
- single crystal
- furnace
- crystal growth
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003708 ampul Substances 0.000 claims description 68
- 239000013078 crystal Substances 0.000 claims description 66
- 239000000843 powder Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 13
- 238000002109 crystal growth method Methods 0.000 claims description 11
- 239000002470 thermal conductor Substances 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000010453 quartz Substances 0.000 description 8
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000007790 solid phase Substances 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 230000005501 phase interface Effects 0.000 description 4
- 229910002665 PbTe Inorganic materials 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011491 glass wool Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19306081A JPS5895689A (ja) | 1981-12-01 | 1981-12-01 | 単結晶育成法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19306081A JPS5895689A (ja) | 1981-12-01 | 1981-12-01 | 単結晶育成法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5895689A JPS5895689A (ja) | 1983-06-07 |
| JPS6121194B2 true JPS6121194B2 (nl) | 1986-05-26 |
Family
ID=16301519
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19306081A Granted JPS5895689A (ja) | 1981-12-01 | 1981-12-01 | 単結晶育成法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5895689A (nl) |
-
1981
- 1981-12-01 JP JP19306081A patent/JPS5895689A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5895689A (ja) | 1983-06-07 |
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