JPS6120963B2 - - Google Patents
Info
- Publication number
- JPS6120963B2 JPS6120963B2 JP8188178A JP8188178A JPS6120963B2 JP S6120963 B2 JPS6120963 B2 JP S6120963B2 JP 8188178 A JP8188178 A JP 8188178A JP 8188178 A JP8188178 A JP 8188178A JP S6120963 B2 JPS6120963 B2 JP S6120963B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent conductive
- conductive film
- film
- gas
- specific resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052760 oxygen Inorganic materials 0.000 claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 27
- 239000001301 oxygen Substances 0.000 claims description 27
- 239000007789 gas Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 18
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 11
- 238000002834 transmittance Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000011261 inert gas Substances 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 claims description 2
- 229910000925 Cd alloy Inorganic materials 0.000 claims 2
- 230000005684 electric field Effects 0.000 claims 2
- 239000010408 film Substances 0.000 description 98
- 238000010438 heat treatment Methods 0.000 description 23
- 238000004544 sputter deposition Methods 0.000 description 22
- 238000010586 diagram Methods 0.000 description 16
- 239000000956 alloy Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 229910052793 cadmium Inorganic materials 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005546 reactive sputtering Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 230000005355 Hall effect Effects 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000002003 electron diffraction Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000013077 target material Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910004607 CdSnO3 Inorganic materials 0.000 description 1
- 206010021143 Hypoxia Diseases 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8188178A JPS5510704A (en) | 1978-07-07 | 1978-07-07 | Transparent conductive film and method of manufacturing same |
| US05/936,124 US4349425A (en) | 1977-09-09 | 1978-08-23 | Transparent conductive films and methods of producing same |
| DE19782839057 DE2839057A1 (de) | 1977-09-09 | 1978-09-07 | Transparente leitende schichten und verfahren zur herstellung von transparenten leitenden schichten |
| US06/369,078 US4423403A (en) | 1977-09-09 | 1982-04-16 | Transparent conductive films and methods of producing same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8188178A JPS5510704A (en) | 1978-07-07 | 1978-07-07 | Transparent conductive film and method of manufacturing same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5510704A JPS5510704A (en) | 1980-01-25 |
| JPS6120963B2 true JPS6120963B2 (enrdf_load_stackoverflow) | 1986-05-24 |
Family
ID=13758785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8188178A Granted JPS5510704A (en) | 1977-09-09 | 1978-07-07 | Transparent conductive film and method of manufacturing same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5510704A (enrdf_load_stackoverflow) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57165905A (en) * | 1981-04-07 | 1982-10-13 | Asahi Glass Co Ltd | Method of forming transparent conductive film |
| JPS6050813A (ja) * | 1983-08-31 | 1985-03-20 | 触媒化成工業株式会社 | プラスチック又は塗料配合用透光性導電性粉末素材 |
| JP2838111B2 (ja) * | 1988-12-02 | 1998-12-16 | 横河電機株式会社 | 薄膜ｅｌ素子およびその製造方法 |
| CA2766401A1 (en) * | 2009-06-22 | 2011-01-13 | First Solar, Inc. | Method and apparatus for annealing a deposited cadmium stannate layer |
-
1978
- 1978-07-07 JP JP8188178A patent/JPS5510704A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5510704A (en) | 1980-01-25 |
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