JPS61206277A - Superconductive transistor - Google Patents

Superconductive transistor

Info

Publication number
JPS61206277A
JPS61206277A JP4653985A JP4653985A JPS61206277A JP S61206277 A JPS61206277 A JP S61206277A JP 4653985 A JP4653985 A JP 4653985A JP 4653985 A JP4653985 A JP 4653985A JP S61206277 A JPS61206277 A JP S61206277A
Authority
JP
Japan
Prior art keywords
substrate
projecting section
control electrode
insulator layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4653985A
Inventor
Masaaki Aoki
Yutaka Harada
Ushio Kawabe
Mutsuko Miyake
Juichi Nishino
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4653985A priority Critical patent/JPS61206277A/en
Priority claimed from DE19853588086 external-priority patent/DE3588086T2/en
Publication of JPS61206277A publication Critical patent/JPS61206277A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L39/00Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
    • H01L39/22Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
    • H01L39/228Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices three or more electrode devices, e.g. transistor-like structures

Abstract

PURPOSE:To improve the accuracy of finishing of a superconductor while enhancing the reliability and uniformity of element characteristics by forming a projecting section consisting of a semiconductor onto a substrate and shaping a pair of superconductive electrodes brought into contact with both sides of the projecting section and a control electrode to the upper section of the projecting section through an insulator layer. CONSTITUTION:An Si single crystal substrate 1 is oxidized to shape an insulator layer 6 on the surface of the substrate, a control electrode 5 consisting of polycrystalline Si is formed through electron0beam evaporation, and the layer 6, the electrode 5 and one part of the substrate 1 are etched through plasma etching while using an electron-beam resist as a mask. Superconducting electrodes 2, 3 are shaped, and the side surface of the control electrode 5 is thermoset to form an insulator layer 7. Accordingly, a projecting section 4 as a channel layer can be shaped easily with high precision while a distance between superconductors can be determined with high accuracy, thus acquiring a switching element having high reliability.
JP4653985A 1985-03-11 1985-03-11 Superconductive transistor Pending JPS61206277A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4653985A JPS61206277A (en) 1985-03-11 1985-03-11 Superconductive transistor

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP4653985A JPS61206277A (en) 1985-03-11 1985-03-11 Superconductive transistor
DE19853588086 DE3588086T2 (en) 1984-11-05 1985-11-04 superconductor arrangement
EP85308009A EP0181191B1 (en) 1984-11-05 1985-11-04 Superconducting device
EP95104470A EP0667645A1 (en) 1984-11-05 1985-11-04 Superconducting device
DE19853588086 DE3588086D1 (en) 1984-11-05 1985-11-04 superconductor arrangement
US07/073,408 US4884111A (en) 1984-11-05 1987-07-13 Superconducting device
US07/412,201 US5126801A (en) 1984-11-05 1989-09-25 Superconducting device
US07/875,431 US5311036A (en) 1984-11-05 1992-04-29 Superconducting device
US08/201,410 US5442196A (en) 1984-11-05 1994-02-24 Superconducting device

Publications (1)

Publication Number Publication Date
JPS61206277A true JPS61206277A (en) 1986-09-12

Family

ID=12750096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4653985A Pending JPS61206277A (en) 1985-03-11 1985-03-11 Superconductive transistor

Country Status (1)

Country Link
JP (1) JPS61206277A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01200680A (en) * 1988-02-05 1989-08-11 Hitachi Ltd Superconducting field-effect transistor
JPH0214586A (en) * 1988-07-01 1990-01-18 Hitachi Ltd Superconductive transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01200680A (en) * 1988-02-05 1989-08-11 Hitachi Ltd Superconducting field-effect transistor
JPH0214586A (en) * 1988-07-01 1990-01-18 Hitachi Ltd Superconductive transistor

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