JPS61205693A - 結晶成長方法 - Google Patents

結晶成長方法

Info

Publication number
JPS61205693A
JPS61205693A JP60043664A JP4366485A JPS61205693A JP S61205693 A JPS61205693 A JP S61205693A JP 60043664 A JP60043664 A JP 60043664A JP 4366485 A JP4366485 A JP 4366485A JP S61205693 A JPS61205693 A JP S61205693A
Authority
JP
Japan
Prior art keywords
gaas
layer
amorphous
base
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60043664A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0524113B2 (enExample
Inventor
Yoshinari Matsumoto
松本　良成
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP60043664A priority Critical patent/JPS61205693A/ja
Publication of JPS61205693A publication Critical patent/JPS61205693A/ja
Publication of JPH0524113B2 publication Critical patent/JPH0524113B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP60043664A 1985-03-07 1985-03-07 結晶成長方法 Granted JPS61205693A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60043664A JPS61205693A (ja) 1985-03-07 1985-03-07 結晶成長方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60043664A JPS61205693A (ja) 1985-03-07 1985-03-07 結晶成長方法

Publications (2)

Publication Number Publication Date
JPS61205693A true JPS61205693A (ja) 1986-09-11
JPH0524113B2 JPH0524113B2 (enExample) 1993-04-06

Family

ID=12670116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60043664A Granted JPS61205693A (ja) 1985-03-07 1985-03-07 結晶成長方法

Country Status (1)

Country Link
JP (1) JPS61205693A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2433447A (en) * 2005-12-21 2007-06-27 Durham Scient Crystals Ltd Bulk single crystal material and method of growth
US8093671B2 (en) 2005-12-21 2012-01-10 Kromek Limited Semiconductor device with a bulk single crystal on a substrate
US8968469B2 (en) 2005-12-21 2015-03-03 Kromek Limited Semiconductor device and method of manufacture thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2433447A (en) * 2005-12-21 2007-06-27 Durham Scient Crystals Ltd Bulk single crystal material and method of growth
US8093671B2 (en) 2005-12-21 2012-01-10 Kromek Limited Semiconductor device with a bulk single crystal on a substrate
US8093095B2 (en) 2005-12-21 2012-01-10 Kromek Limited Semiconductor device with a bulk single crystal on a substrate
US8968469B2 (en) 2005-12-21 2015-03-03 Kromek Limited Semiconductor device and method of manufacture thereof

Also Published As

Publication number Publication date
JPH0524113B2 (enExample) 1993-04-06

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