JPS6120311A - アモルフアス軟磁性膜の作製方法 - Google Patents

アモルフアス軟磁性膜の作製方法

Info

Publication number
JPS6120311A
JPS6120311A JP59140670A JP14067084A JPS6120311A JP S6120311 A JPS6120311 A JP S6120311A JP 59140670 A JP59140670 A JP 59140670A JP 14067084 A JP14067084 A JP 14067084A JP S6120311 A JPS6120311 A JP S6120311A
Authority
JP
Japan
Prior art keywords
film
ion beam
amorphous
substrate
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59140670A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582723B2 (enExample
Inventor
Akio Tago
田子　章男
Tsutomu Nishimura
力 西村
Tomoyuki Toshima
戸島　知之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP59140670A priority Critical patent/JPS6120311A/ja
Publication of JPS6120311A publication Critical patent/JPS6120311A/ja
Publication of JPH0582723B2 publication Critical patent/JPH0582723B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/13—Amorphous metallic alloys, e.g. glassy metals
    • H01F10/132—Amorphous metallic alloys, e.g. glassy metals containing cobalt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)
  • Physical Vapour Deposition (AREA)
JP59140670A 1984-07-09 1984-07-09 アモルフアス軟磁性膜の作製方法 Granted JPS6120311A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59140670A JPS6120311A (ja) 1984-07-09 1984-07-09 アモルフアス軟磁性膜の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59140670A JPS6120311A (ja) 1984-07-09 1984-07-09 アモルフアス軟磁性膜の作製方法

Publications (2)

Publication Number Publication Date
JPS6120311A true JPS6120311A (ja) 1986-01-29
JPH0582723B2 JPH0582723B2 (enExample) 1993-11-22

Family

ID=15274026

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59140670A Granted JPS6120311A (ja) 1984-07-09 1984-07-09 アモルフアス軟磁性膜の作製方法

Country Status (1)

Country Link
JP (1) JPS6120311A (enExample)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307272A (ja) * 1987-06-05 1988-12-14 Hitachi Ltd イオンビ−ムスパツタ装置
WO2002071456A3 (en) * 2001-01-19 2003-03-20 Intel Corp Magnetic layer processing
US6856228B2 (en) 1999-11-23 2005-02-15 Intel Corporation Integrated inductor
US6856226B2 (en) 1999-11-23 2005-02-15 Intel Corporation Integrated transformer
US6891461B2 (en) 1999-11-23 2005-05-10 Intel Corporation Integrated transformer
US7087976B2 (en) 1999-11-23 2006-08-08 Intel Corporation Inductors for integrated circuits
US7852185B2 (en) 2003-05-05 2010-12-14 Intel Corporation On-die micro-transformer structures with magnetic materials
US8134548B2 (en) 2005-06-30 2012-03-13 Micron Technology, Inc. DC-DC converter switching transistor current measurement technique
JP2013232273A (ja) * 2012-04-30 2013-11-14 Seagate Technology Llc データ記憶装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58177432A (ja) * 1982-04-13 1983-10-18 Matsushita Electric Ind Co Ltd 非晶質磁性合金
JPS5980909A (ja) * 1982-11-01 1984-05-10 Seiko Epson Corp 垂直磁気記録媒体

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58177432A (ja) * 1982-04-13 1983-10-18 Matsushita Electric Ind Co Ltd 非晶質磁性合金
JPS5980909A (ja) * 1982-11-01 1984-05-10 Seiko Epson Corp 垂直磁気記録媒体

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63307272A (ja) * 1987-06-05 1988-12-14 Hitachi Ltd イオンビ−ムスパツタ装置
US7119650B2 (en) 1999-11-23 2006-10-10 Intel Corporation Integrated transformer
US7299537B2 (en) 1999-11-23 2007-11-27 Intel Corporation Method of making an integrated inductor
US6856228B2 (en) 1999-11-23 2005-02-15 Intel Corporation Integrated inductor
US6856226B2 (en) 1999-11-23 2005-02-15 Intel Corporation Integrated transformer
US6870456B2 (en) 1999-11-23 2005-03-22 Intel Corporation Integrated transformer
US6891461B2 (en) 1999-11-23 2005-05-10 Intel Corporation Integrated transformer
US7982574B2 (en) 1999-11-23 2011-07-19 Intel Corporation Integrated transformer
US6943658B2 (en) 1999-11-23 2005-09-13 Intel Corporation Integrated transformer
US6988307B2 (en) 1999-11-23 2006-01-24 Intel Corporation Method of making an integrated inductor
US7064646B2 (en) 1999-11-23 2006-06-20 Intel Corporation Integrated inductor
US6815220B2 (en) 1999-11-23 2004-11-09 Intel Corporation Magnetic layer processing
US6940147B2 (en) 1999-11-23 2005-09-06 Intel Corporation Integrated inductor having magnetic layer
US7791447B2 (en) 1999-11-23 2010-09-07 Intel Corporation Integrated transformer
US7327010B2 (en) 1999-11-23 2008-02-05 Intel Corporation Inductors for integrated circuits
US7332792B2 (en) 1999-11-23 2008-02-19 Intel Corporation Magnetic layer processing
US7434306B2 (en) 1999-11-23 2008-10-14 Intel Corporation Integrated transformer
US7087976B2 (en) 1999-11-23 2006-08-08 Intel Corporation Inductors for integrated circuits
WO2002071456A3 (en) * 2001-01-19 2003-03-20 Intel Corp Magnetic layer processing
US7852185B2 (en) 2003-05-05 2010-12-14 Intel Corporation On-die micro-transformer structures with magnetic materials
US8471667B2 (en) 2003-05-05 2013-06-25 Intel Corporation On-die micro-transformer structures with magnetic materials
US8134548B2 (en) 2005-06-30 2012-03-13 Micron Technology, Inc. DC-DC converter switching transistor current measurement technique
US8482552B2 (en) 2005-06-30 2013-07-09 Micron Technology, Inc. DC-DC converter switching transistor current measurement technique
US9124174B2 (en) 2005-06-30 2015-09-01 Micron Technology, Inc. DC-DC converter switching transistor current measurement technique
JP2013232273A (ja) * 2012-04-30 2013-11-14 Seagate Technology Llc データ記憶装置

Also Published As

Publication number Publication date
JPH0582723B2 (enExample) 1993-11-22

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Legal Events

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EXPY Cancellation because of completion of term