JPS61202450A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS61202450A
JPS61202450A JP4305785A JP4305785A JPS61202450A JP S61202450 A JPS61202450 A JP S61202450A JP 4305785 A JP4305785 A JP 4305785A JP 4305785 A JP4305785 A JP 4305785A JP S61202450 A JPS61202450 A JP S61202450A
Authority
JP
Japan
Prior art keywords
cell
region
peripheral
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4305785A
Other languages
Japanese (ja)
Inventor
Hiroshi Koyada
古谷田 宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP4305785A priority Critical patent/JPS61202450A/en
Publication of JPS61202450A publication Critical patent/JPS61202450A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11898Input and output buffer/driver structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To increase an effective inner logic cell region without increasing a chip area by forming a region of part of a peripheral cell in the same construction as the inner logic cell region. CONSTITUTION:A peripheral cell 12 is formed at partial region 30 above the cell 12 in the same cell as an inner logic cell 11. An inner logic cell 21 is disposed on the upper region of an unused peripheral cell 33a not used as an input/output buffer. Accordingly, a new inner logic block is disposed on a vacant cell region 61 in which the block 21 is moved. Thus, effective inner logic cell region is increased.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はセルの構成を改善したマスタースライス方式の
半導体集積回路装置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a master slice type semiconductor integrated circuit device with an improved cell configuration.

〔従来の技術〕[Conventional technology]

従来、マスタースライス方式の半導体集積回路装置(以
下、ICという0)のチップレイアウトは、例えば第2
図に示す如く、内部論理セル11、周辺セル12および
配線領域13よシなりてお〕、周辺セル12は入出カバ
、ファーの構成にのみ使用されていた0 〔発明が解決しようとする問題点〕 第3図は上述したテラグレイアウトの一部をざらに詳細
に示したものである。同図において。
Conventionally, the chip layout of a master slice type semiconductor integrated circuit device (hereinafter referred to as IC) is, for example, a second
As shown in the figure, it consists of an internal logic cell 11, a peripheral cell 12, and a wiring area 13], and the peripheral cell 12 was used only for the configuration of input/output covers and fur.[Problems to be Solved by the Invention] ] FIG. 3 shows a part of the above-mentioned Terrag layout in rough detail. In the same figure.

21〜26は内部論理プロ、り、31.32は入出カバ
、ファープロ、り、33は未使用周辺セルである。これ
らのブロックは、第1の金属配線41、第2の金稿配置
tJ42およびピアホール43により接続され、論理回
路を構成している0未使用周辺セル33は、入カバ、フ
ァーにも出カバ、ファーにも使用されないセルである。
21 to 26 are internal logic processors, 31 and 32 are input/output covers and far processors, and 33 is an unused peripheral cell. These blocks are connected by a first metal wiring 41, a second metal wiring tJ42, and a peer hole 43, and the unused peripheral cells 33 forming the logic circuit have an input cover, a far outer cover, and an output cover. This cell is not even used for fur.

マスタースライス方式ICでは、通常はとんどの場合こ
のような空セルが生じ、論理回路として機能しない部分
としてチップ上に存在し、テッグ面積が有効に活用でき
ないという問題がありた〇本発明の目的は、上記の問題
点を解消することによシ、マスタースライス方式ICに
おける周辺セルの未使用領域を減少し、テア1面積の有
効活用ができるところの、新しいセル構成を有する半導
体集積回路装置を提供することにある。
In master slice type ICs, such empty cells usually occur in most cases and exist on the chip as a part that does not function as a logic circuit, and there is a problem that the TEG area cannot be used effectively.Objective of the present invention. By solving the above problems, we have developed a semiconductor integrated circuit device with a new cell configuration that can reduce the unused area of peripheral cells in a master slice IC and effectively utilize the tear area. It is about providing.

〔問題点を解決するための手段〕[Means for solving problems]

本発明の半導体集積回路装置は、アレイ状に配列された
内部論理セルと、周辺セルとを有するマスタースライス
方式の半導体集積回路装置において、前記周辺セルの一
部を前記同郡論理セル列(もしくは行)と同一の構成と
なしたことからなっている。
The semiconductor integrated circuit device of the present invention is a master slice type semiconductor integrated circuit device having internal logic cells arranged in an array and peripheral cells, in which a part of the peripheral cells are arranged in the same group logic cell column (or It consists of the same structure as (row).

〔実施例〕〔Example〕

以下、図面を参照して本発明について説明する。 The present invention will be described below with reference to the drawings.

第1図は本発明の一実施例のテップレイアクトの一部を
示すレイアウト図である。同図において周辺セル12は
その上方の一部の領域30を内部論理セル11と同一の
セルにより構成し、その配列方法も内部論理セル領域と
同一の構成をなしている。
FIG. 1 is a layout diagram showing a part of a tip layout according to an embodiment of the present invention. In the figure, a part of the upper region 30 of the peripheral cell 12 is made up of the same cells as the internal logic cell 11, and the arrangement method thereof is also the same as that of the internal logic cell region.

入出力バッ7アーは、周辺セル12の領域30の全ての
、あるいは一部のセルおよび他の領域によシ構成される
The input/output buffer 7 is configured by all or some cells of the region 30 of the peripheral cell 12 and other regions.

しかるに、入出カバ、ファーとして使用されない未使用
周辺セル33aの上方領域30は内部論理セル領域と何
ら相違するものではなく、内部論理ブロックを配置する
ことが可能である。本冥施例では、内部論理セル21を
未使用周辺セル33aの上方領域に配置している。した
がって内部論理ブロック21の移動した空セル領域61
には新たな内部論理プロ、りを配置できる。
However, the area 30 above the unused peripheral cells 33a, which is not used as an input/output cover or fur, is no different from the internal logic cell area, and an internal logic block can be placed therein. In this embodiment, the internal logic cell 21 is arranged in the area above the unused peripheral cell 33a. Therefore, the empty cell area 61 of the internal logic block 21 is moved.
A new internal logic processor can be placed.

又、入出力パッファーブロック31a、32aとして使
用している周辺セルにおいても、領域30の一部の未使
用領域51.52は内部論理セルと同様に内部論理ブロ
ックを配置できることは明らかである。
Furthermore, it is clear that even in the peripheral cells used as the input/output buffer blocks 31a and 32a, internal logic blocks can be placed in the unused areas 51 and 52 of the area 30 in the same way as the internal logic cells.

〔発明の効果〕〔Effect of the invention〕

以上述べた如く、本発明の半導体集積回路装置は、周辺
セルの一部の領域を内部論理セル領域と同一の構成とす
ることにより、チップ面積を増大させることなく、実効
的な内部論理セル領域を拡大できる効果を有する。
As described above, in the semiconductor integrated circuit device of the present invention, by making a part of the peripheral cell have the same configuration as the internal logic cell area, the effective internal logic cell area can be reduced without increasing the chip area. It has the effect of expanding the

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例のテアグレイアクトの一部を
示すレイアウト図、第2図は一従来例のテップレイアウ
トを示すレイアクト図、第3図は第2図の部分詳細図で
ある。 11・・・・・内部論理セル、12・・・・・・周辺セ
ル。 13・・・・・・配線領域%21〜26・・・・・・内
部論理プロ、り、30・・・・・・周辺セルの一部の領
域、31゜金属配線、42・・・・・・第2の金属配線
、43・・・・・・ピアホール、51.52・・・・・
・未使用領域、61・・・・・・空セル領域0 il: 内4fsf倉理セJし   31几、32tt
: 入出カバ゛°7フアプ”口・ツクt2:周返七lし
      21〜2に : カ番l倉理ブロック13
二 面乙線#Itに       51,52:  水
イ乏用搾勇薫墾1図 /3配隷傾城
Fig. 1 is a layout diagram showing a part of a tear gray act according to an embodiment of the present invention, Fig. 2 is a lay act diagram showing a tip layout of a conventional example, and Fig. 3 is a partial detailed view of Fig. 2. . 11... Internal logic cell, 12... Peripheral cell. 13...Wiring area %21-26...Internal logic pro, ri, 30...Part of peripheral cell area, 31° metal wiring, 42... ...Second metal wiring, 43...Pier hole, 51.52...
・Unused area, 61...Empty cell area 0 il: 4fsf storage space J 31, 32tt
: Input/output cover ゛°7 UP'' mouth/tsuk t2: Round return 7l to 21-2: Ka number l Kurari block 13
2nd side line #It 51, 52: water shortage use shiyuukunken 1 diagram / 3 slave leaning castle

Claims (1)

【特許請求の範囲】[Claims] アレイ状に配列された内部論理セルと、周辺セルとを有
するマスタースライス方式の半導体集積回路装置におい
て、前記周辺セルの一部を前記内部論理セル列(もしく
は行)と同一の構成となしたことを特徴とする半導体集
積回路装置。
In a master slice type semiconductor integrated circuit device having internal logic cells arranged in an array and peripheral cells, some of the peripheral cells have the same configuration as the internal logic cell columns (or rows). A semiconductor integrated circuit device characterized by:
JP4305785A 1985-03-05 1985-03-05 Semiconductor integrated circuit device Pending JPS61202450A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4305785A JPS61202450A (en) 1985-03-05 1985-03-05 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4305785A JPS61202450A (en) 1985-03-05 1985-03-05 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS61202450A true JPS61202450A (en) 1986-09-08

Family

ID=12653243

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4305785A Pending JPS61202450A (en) 1985-03-05 1985-03-05 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS61202450A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204162A (en) * 1987-02-24 1996-08-09 Internatl Business Mach Corp <Ibm> Logical chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08204162A (en) * 1987-02-24 1996-08-09 Internatl Business Mach Corp <Ibm> Logical chip

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