JPH03152956A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPH03152956A
JPH03152956A JP29271989A JP29271989A JPH03152956A JP H03152956 A JPH03152956 A JP H03152956A JP 29271989 A JP29271989 A JP 29271989A JP 29271989 A JP29271989 A JP 29271989A JP H03152956 A JPH03152956 A JP H03152956A
Authority
JP
Japan
Prior art keywords
integrated circuit
bonding pads
circuit chip
row
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29271989A
Other languages
Japanese (ja)
Inventor
Atsushi Kuriyama
栗山 敦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP29271989A priority Critical patent/JPH03152956A/en
Publication of JPH03152956A publication Critical patent/JPH03152956A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve an integrated circuit device in characteristics by a method wherein interface cells corresponding to the first and the second row of bonding pads from the side of an integrated circuit chip are different from each other in constitution for each row of bonding pad. CONSTITUTION:Bonding pads P1-P3 are arranged in a line in a direction parallel with the side of an integrated circuit chip 1. Bonding pads P4-P6 are arranged in a line in a direction parallel with the side of the integrated circuit chip 1 inside the bonding pads P1-P3. The bonding pads P1-P3 and P4-P6 are so arranged that the centers of the bonding pads and the side of the integrated circuit chip do not overlap with each other in a vertical direction. Output buffer circuit transistor and resistor regions T4-T9 and output buffer circuit transistor and resistor regions T1-T3 of the same type with the regions T4-T9 are provided between the bonding pads P1-P3 and interface cells C1-C3 to be added to the interface cells C1-C3.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は半導体集積回路に関し、特にボンディングパッ
ドを複数列有するマスタスライス方式半導体集積回路装
置に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor integrated circuit, and more particularly to a master slice type semiconductor integrated circuit device having multiple rows of bonding pads.

〔従来の技術〕[Conventional technology]

従来よりピン数の多い半導体集積回路では、集積回路チ
ップ上に形成できるボンディングパッド数を増やすため
、ボンディングパッドを集積回路チップの辺と平行に複
数列、集積回路チップの辺と垂直方向には重なり合わな
いよう並べるという構成をとるものがあった。
Conventionally, in semiconductor integrated circuits with a large number of pins, in order to increase the number of bonding pads that can be formed on an integrated circuit chip, bonding pads are placed in multiple rows parallel to the sides of the integrated circuit chip, and overlapping in the vertical direction with the sides of the integrated circuit chip. Some were arranged in such a way that they did not match.

第2図は従来の半導体集積回路の一例の平面図である。FIG. 2 is a plan view of an example of a conventional semiconductor integrated circuit.

ボンディングパッドP1〜P3とボンディングパッドP
4〜P6は二列に並んでいる。ボンディングパッドP1
〜P3は集積回路チップの辺1側の列に並び、ボンディ
ングパッドP4〜P6は集積回路チップ内側の列に並ん
でいる。ボンディングパッドP1〜P6それぞれにイン
タフェイス用セルC1〜C6が一対−に対応している。
Bonding pads P1 to P3 and bonding pad P
4 to P6 are lined up in two rows. Bonding pad P1
-P3 are arranged in a row on the side 1 side of the integrated circuit chip, and bonding pads P4-P6 are arranged in a row on the inside of the integrated circuit chip. Pairs of interface cells C1 to C6 correspond to bonding pads P1 to P6, respectively.

インタフェイス用セルC1〜C6は、すべて同−の構造
、同一の形状を持っていた。さらに、インタフェイス用
セル01〜C6はボンディングパッドP1〜P6の列に
よらず集積回路チップの辺1から一定の距離を保ち、集
積回路イップの辺1−と平行な方向に一列に配置されて
いた。通常、ボンディングパッドP4〜P6とインタフ
ェイス用セル04〜C6との間隔は、ボンディング時に
、インタフェイス用セルに影響を与えない必要最小間隔
である。このとき、ボンディングパッドP1〜P3とそ
れぞれが対応するインタフェイス用セル01〜C3との
間のホンディングパッド−列置の領域は全く使われず、
無駄になっていた。
The interface cells C1 to C6 all had the same structure and shape. Furthermore, the interface cells 01 to C6 are arranged in a line in a direction parallel to side 1- of the integrated circuit chip, keeping a constant distance from side 1 of the integrated circuit chip, regardless of the rows of bonding pads P1 to P6. Ta. Usually, the distance between the bonding pads P4 to P6 and the interface cells 04 to C6 is the minimum necessary distance that does not affect the interface cells during bonding. At this time, the bonding pad array area between the bonding pads P1 to P3 and the corresponding interface cells 01 to C3 is not used at all,
It was wasted.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来の半導体集積回路では、インタフェイス用
セルが集積回路チップの辺1から2列目のボンディング
パッドのさらに内側に、集積回路チップの辺から一定距
離で一列に配置されていたことにより、集積回路チップ
の辺から1列目のボンディングパッドとインタフェイス
用セルの間に無駄な領域が生じるので、半導体集積回路
の集積密度が低下するという欠点があった。
In the conventional semiconductor integrated circuit described above, the interface cells are arranged in a line at a constant distance from the side of the integrated circuit chip, further inside the bonding pads in the second row from the first side of the integrated circuit chip. Since a wasted area is created between the bonding pad in the first row from the side of the integrated circuit chip and the interface cell, there is a drawback that the integration density of the semiconductor integrated circuit is reduced.

〔課題を解決するための手段〕 本発明の半導体集積回路は、ボンディングパッドが集積
回路チップの一辺と平行に少なくとも一列、該集積回路
チップの辺と垂直方向には前記ボンディングパッドの中
心か重なり合うことなく並んでいるマスタスライス方式
の半導体集積回路において、前記集積回路チップ辺から
一列目のボンディングパッドに一対一に対応する第1の
種類のインタフェイス用セルの構成が前記集積回路チッ
プ辺から二列目のボンデインクパッドに一対一に対応す
る第2の種類のインタフェイス用セルの構成と異なると
いう特徴を有する。
[Means for Solving the Problems] The semiconductor integrated circuit of the present invention has at least one row of bonding pads parallel to one side of the integrated circuit chip, and the centers of the bonding pads overlap in a direction perpendicular to the side of the integrated circuit chip. In a master slice type semiconductor integrated circuit in which the semiconductor integrated circuits are arranged in a master slice manner, the structure of the first type of interface cells corresponding one-to-one to the bonding pads in the first row from the side of the integrated circuit chip is arranged in the second row from the side of the integrated circuit chip. It has a feature that it is different from the structure of the second type of interface cell, which corresponds one-to-one to the bonding ink pad of the eye.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の一実施例の平面図である。FIG. 1 is a plan view of one embodiment of the present invention.

半導体集積回路のボンディングパッドP1〜P3は、集
積回路チップの辺と平行な方向に一列にならんでいる。
Bonding pads P1 to P3 of the semiconductor integrated circuit are arranged in a line in a direction parallel to the sides of the integrated circuit chip.

ボンディングパッドP4〜P6は、ボンディングパッド
P1〜P3より集積回路チップ内側に集積回路チップの
辺と平行な方向に並んでいる。ボンディングパッドP1
〜P3とP4〜P6とは、集積回路チップの辺とボンデ
ィングパッド中心とが垂直な方向に重なり合うことがな
いよう配置されている。
The bonding pads P4 to P6 are arranged inside the integrated circuit chip from the bonding pads P1 to P3 in a direction parallel to the sides of the integrated circuit chip. Bonding pad P1
~P3 and P4 to P6 are arranged so that the sides of the integrated circuit chip and the center of the bonding pad do not overlap in the perpendicular direction.

集積回路チップの辺から1列目のボンディングパッドP
1〜P3とこれに対応するインタフェイス用セルC1〜
C3の間の領域はインタフェイス用セルの出力回路用の
トランジスタおよび抵抗の占める領域にほぼ匹敵する。
Bonding pad P in the first row from the side of the integrated circuit chip
1 to P3 and the corresponding interface cell C1 to
The area between C3 is approximately comparable to the area occupied by the transistor and resistor for the output circuit of the interface cell.

従って、ホンディングパッドP1〜P3とインタフェイ
ス用セル01〜C3の間に出力バッファ回路用のトラン
ジスタおよび抵抗領域T4〜Tつと同一の出力バッファ
回路用のトランジスタおよび抵抗領域T1〜T3を設置
し、これをインクフェイス用セルC]〜C3に付加する
Therefore, between the bonding pads P1 to P3 and the interface cells 01 to C3, the same transistors and resistance regions T1 to T3 for the output buffer circuit as the transistors and resistance regions T4 to T for the output buffer circuit are installed, This is added to the ink face cells C] to C3.

これにより、インタフェイス用セルC1〜C3の出力バ
ッファ回路は、インタフェイス用セルC4〜C6の出力
バッファ回路に比べ2倍の出力バッファ回路用のトラン
ジスタおよび抵抗を持つことになり、インタフェイス用
セル01〜C3の駆動能力は、通常の入出力バッファ回
路用セルC4〜C6に比べ、約2倍に向上させることが
できる。
As a result, the output buffer circuits of the interface cells C1 to C3 have twice as many output buffer circuit transistors and resistances as the output buffer circuits of the interface cells C4 to C6. The driving ability of cells 01 to C3 can be improved approximately twice as much as that of normal input/output buffer circuit cells C4 to C6.

このように、従来無駄になっていた領域を利用して、集
積回路装置の特性の向上が可能になる。
In this way, it is possible to improve the characteristics of the integrated circuit device by utilizing the area that was previously wasted.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、 (a)集積回路チップの辺から1列目と2列目のホンデ
ィングパッドに対応するインタフェイス用セルの構成が
ボンディングパッドの列毎に異なるものにすること、 (b)集積回路チップ辺から1列めのボンディングパッ
ドに出力バッファを対応させ、2列目のホンディングパ
ッドに入力バッファを対応させること、 により、ホンディングパッドと入出力バッファ回路用セ
ル間の面積の無駄を無くし、半導体集積回路装置のチッ
プ面積の有効利用並びに集積密度を向上を図ることがで
きるという効果がある。
As explained above, the present invention has the following features: (a) The structure of the interface cells corresponding to the bonding pads in the first and second rows from the side of the integrated circuit chip is different for each row of bonding pads. (b) Associating the output buffer with the bonding pad in the first row from the side of the integrated circuit chip, and associating the input buffer with the bonding pad in the second row, thereby creating a connection between the bonding pad and the input/output buffer circuit cell. This has the effect of eliminating wasted area, making effective use of the chip area of the semiconductor integrated circuit device, and improving the integration density.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の平面図、第2国は従来の集
積回路チップの一例の平面図である。 1・・・集積回路チップの辺、C1〜C6・・・インク
フェイス用セル、P1〜P6・・・ホンディングパッド
、T1〜T9・・・出力バッファ回路用のトランジスタ
および抵抗領域。
FIG. 1 is a plan view of one embodiment of the present invention, and FIG. 2 is a plan view of an example of a conventional integrated circuit chip. 1...Sides of integrated circuit chip, C1-C6... Ink face cells, P1-P6... Honding pads, T1-T9... Transistors and resistance regions for output buffer circuits.

Claims (1)

【特許請求の範囲】[Claims]  ボンディングパッドが集積回路チップの一辺と平行に
少なくとも二列、該集積回路チップの辺と垂直方向には
前記ボンディングパッドの中心が重なり合うことなく並
んでいるマスタスライス方式の半導体集積回路において
、前記集積回路チップの辺から一列目のボンディングパ
ッドに一対一に対応する第1の種類のインタフェイス用
セルの構成が前記集積回路チップの辺から二列目のボン
ディングパッドに一対一に対応する第2の種類のインタ
フェイス用セルの構成と異なることを特徴とする半導体
集積回路。
In a master slice type semiconductor integrated circuit in which bonding pads are arranged in at least two rows parallel to one side of an integrated circuit chip and in a direction perpendicular to the side of the integrated circuit chip without overlapping the centers of the bonding pads, the integrated circuit The configuration of the first type of interface cells corresponds one-to-one to the bonding pads in the first row from the side of the chip, and the configuration of the second type interface cells corresponds one-to-one to the bonding pads in the second row from the side of the integrated circuit chip. A semiconductor integrated circuit characterized by having a structure different from that of an interface cell.
JP29271989A 1989-11-09 1989-11-09 Semiconductor integrated circuit Pending JPH03152956A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29271989A JPH03152956A (en) 1989-11-09 1989-11-09 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29271989A JPH03152956A (en) 1989-11-09 1989-11-09 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPH03152956A true JPH03152956A (en) 1991-06-28

Family

ID=17785430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29271989A Pending JPH03152956A (en) 1989-11-09 1989-11-09 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPH03152956A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818114A (en) * 1995-05-26 1998-10-06 Hewlett-Packard Company Radially staggered bond pad arrangements for integrated circuit pad circuitry
US6130484A (en) * 1997-07-17 2000-10-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5818114A (en) * 1995-05-26 1998-10-06 Hewlett-Packard Company Radially staggered bond pad arrangements for integrated circuit pad circuitry
US6130484A (en) * 1997-07-17 2000-10-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor device

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