JPS61196390A - Ic card - Google Patents

Ic card

Info

Publication number
JPS61196390A
JPS61196390A JP60038007A JP3800785A JPS61196390A JP S61196390 A JPS61196390 A JP S61196390A JP 60038007 A JP60038007 A JP 60038007A JP 3800785 A JP3800785 A JP 3800785A JP S61196390 A JPS61196390 A JP S61196390A
Authority
JP
Japan
Prior art keywords
semiconductor device
card
conductive
semiconductor
embedded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60038007A
Other languages
Japanese (ja)
Inventor
Kenzo Hatada
畑田 賢造
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP60038007A priority Critical patent/JPS61196390A/en
Publication of JPS61196390A publication Critical patent/JPS61196390A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06KGRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07743External electrical contacts

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Credit Cards Or The Like (AREA)

Abstract

PURPOSE:To reduce the thickness of the packaged module, reduce the package area and increase reliability by forming metallic projections on the prescribed electrode terminals of the IC, LSI semiconductor devices, and mounting and building-in within the card. CONSTITUTION:An electroconductive projections 10 are formed on the surface of semiconductor device 2 and the semiconductor device 2 is embedded in a recessed part 12a provided in a supporting body 12 comprising the card 6. A film 13 is provided on the surface of the supporter 12 and only the conductive projection 10 of the semiconductor device 2 is exposed. The semiconductor device 2 is a semiconductor integrated circuit having memories for CPUs and memory functions. In order to receive/send signals between the embedded semiconductor circuit 2 and the outside circuits, outside signal terminals 11 contact with the electroconductive projection 10.

Description

【発明の詳細な説明】 産業上の利用分野 この発明は記憶回路、制御回路等の半導体装置を埋設し
た薄形のICカードに関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention This invention relates to a thin IC card in which semiconductor devices such as a memory circuit and a control circuit are embedded.

従来の技術 近年、IO,LSIを内蔵して大容量のメモリー機能を
持ち、キャッシュカード、クレジットカード等種々の機
能を発揮するいわゆるICカードの開発が行なわれてい
る。このICカードは携帯性を重要視するならば従来の
磁気ストライプ部を背面に設けた磁気ストライプカード
あるいはカードに孔を設けたシ凹凸を設けたエンボスカ
ードと同様にその厚さは少なくとも1ff以下望ましく
は0.7611に薄くする必要があり、また、カードの
折曲げに対して、内蔵したXC,L、SIの破損や回路
導体の断線を防ぐ念゛め実装面積も著しるしく小さくす
る必要がある。
2. Description of the Related Art In recent years, so-called IC cards have been developed that have built-in IO and LSI, have large capacity memory functions, and perform various functions such as cash cards and credit cards. If portability is important to this IC card, it is desirable that its thickness be at least 1 ff or less, similar to a conventional magnetic stripe card with a magnetic stripe section on the back or an embossed card with a hole in the card. It is necessary to reduce the thickness to 0.7611, and the mounting area also needs to be significantly reduced to prevent damage to the built-in XC, L, and SI and disconnection of circuit conductors when the card is bent. be.

第4図は一般的なICカードにおけるカードに埋設した
IC,LSIチップの実装モジュールを示している。
FIG. 4 shows a mounting module of IC and LSI chips embedded in a general IC card.

ガラスエポキシ基板1等にムUメッキ処理した導体配線
3が形成され、基板1上の一方にはIC。
Conductor wiring 3 coated with U-plating is formed on a glass epoxy substrate 1, etc., and an IC is mounted on one side of the substrate 1.

LSIチップ2がダイポンドされ、かつワイヤー4で導
体配線3と接続されている。また基板1上の他方には電
気的信号の入出力を行なうために、外部回路と接続する
ための複数の端子群5が形成されている。第6図は第4
図の平面図を示したものである。前記基板1は樹脂で形
成されたカード6に、該カード形成時に埋設もしくは装
着され、第6図に示すように前記端子群6のみが露出す
る様に樹脂フィルムによシ形成されるものである。
An LSI chip 2 is die-bonded and connected to conductor wiring 3 with wires 4. Further, on the other side of the substrate 1, a plurality of terminal groups 5 for connection with external circuits are formed for inputting and outputting electrical signals. Figure 6 is the 4th
FIG. 3 shows a plan view of the figure. The substrate 1 is embedded or attached to a card 6 made of resin when the card is formed, and is formed of a resin film so that only the terminal group 6 is exposed, as shown in FIG. .

発明が解決しようとする問題点 しかし、このような構成にあっては、IC。The problem that the invention aims to solve However, in such a configuration, the IC.

LSIチップを搭載する領域と端子群の領域が同一平面
に位置するために基板10寸法が大きくなり、折曲げ等
により導体配線の断線を招きやすいものであった。また
IC,LSIチップの実装がダイポンディングやワイヤ
ポンディングを用いているために、接続箇所が、IC,
LSIチップ上の電極部と基板上の導体配線の2箇所も
存在し、接続の信頼性を低下せしめるものである。また
、ワイヤーポンディングによる接続を行なっているため
に、前記ワイヤーがIc、LSIチップの表面から少な
くとも0.3 ffはみ出してしまったり、あるいはダ
イポンディングを行なうため、基板1の厚さを0.2f
f以上にしなければならない。仮にIC:、LSIチッ
プの厚さが0.2 tmの場合、実装モジュールの厚さ
は0.7 tmに達し、カード6に装着する際、保護用
フィルムの厚さも加算され、カード全体の厚さは1n以
上になり著しるしく実用性を欠くものであった。
Since the area where the LSI chip is mounted and the area where the terminal group is located are located on the same plane, the dimensions of the board 10 become large, and the conductor wiring is likely to break due to bending or the like. In addition, since IC and LSI chips are mounted using die bonding and wire bonding, the connection points are
There are also two locations: the electrode section on the LSI chip and the conductor wiring on the substrate, which reduces the reliability of the connection. Furthermore, since the connection is made by wire bonding, the wires may protrude by at least 0.3 ff from the surface of the IC or LSI chip, or the thickness of the substrate 1 may be reduced by 0.2 ff due to die bonding.
Must be greater than or equal to f. If the thickness of the IC:,LSI chip is 0.2 tm, the thickness of the mounted module will reach 0.7 tm, and when it is attached to the card 6, the thickness of the protective film will be added, and the total thickness of the card will be The diameter was 1n or more, which was extremely impractical.

そこで、本発明は、IC,LSIチップをカードに装着
、内蔵させた時、実装モジュールの厚さが薄く、実装面
積が小さく、かつ信頼性が高くなるようにしようとする
ものである。
Therefore, the present invention aims to provide a mounted module with a thin thickness, a small mounting area, and high reliability when an IC or LSI chip is mounted on a card and incorporated therein.

問題点を解決するための手段 上記問題点を解決するため本発明では、IC。Means to solve problems In order to solve the above problems, the present invention uses an IC.

LSxの半導体装置の所定の電極端子上に金属突起を形
成し、これ自体をカード内に装着、内蔵せしめ前記金属
突起のみをカード表面に露出させるものである。
Metal protrusions are formed on predetermined electrode terminals of the LSx semiconductor device, and the protrusions themselves are mounted and built into the card, with only the metal protrusions exposed on the card surface.

作用 このようにIC,LSIの半導体装置の電極端子上に金
属突起を形成し、カードに前記半導体装置の外寸と合致
する凹部を形成し、これに前記半導体装置を配設してお
き、前記金属突起のみがカード表面から露出した構成、
すなわち外部端子と信号の授受を行なう端子を半導体装
置上に形成したものであるから、実装モジュールの面積
が小さくなり、かつ厚さを薄くでき、接続箇所を低減で
きるものである。
Operation In this way, metal protrusions are formed on the electrode terminals of semiconductor devices such as ICs and LSIs, a recess is formed in the card that matches the outer dimensions of the semiconductor device, and the semiconductor device is disposed in this recess. A configuration in which only the metal protrusions are exposed from the card surface.
That is, since the terminals for exchanging signals with external terminals are formed on the semiconductor device, the area of the mounted module can be reduced, the thickness can be reduced, and the number of connection points can be reduced.

実施例 第1図に本発明の一実施例を示す。Example FIG. 1 shows an embodiment of the present invention.

半導体装置2の表面に導電性突起10が形成されており
、カード6を構成する支持体12に設けた凹部121L
に前記半導体装置2が埋設される。
A conductive protrusion 10 is formed on the surface of the semiconductor device 2, and a recess 121L is provided in the support 12 constituting the card 6.
The semiconductor device 2 is buried therein.

支持体12の表面にはフィルム13が設けられ、少なく
とも前記半導体装置2の導電性突起10のみが露出した
構成となっている。前記半導体装置は、メモリーもしく
はc、p、uとメモリー機能を有した半導体集積回路で
ある。前記埋設した半導体装置と外部回路(図示せず)
との信号の授受を行なうため、外部信号端子11が、前
記導電性突起1oと接する事になる。
A film 13 is provided on the surface of the support 12, so that at least only the conductive projections 10 of the semiconductor device 2 are exposed. The semiconductor device is a memory or a semiconductor integrated circuit having c, p, u and memory functions. The buried semiconductor device and external circuit (not shown)
In order to exchange signals with the external signal terminal 11, the external signal terminal 11 comes into contact with the conductive protrusion 1o.

次に導電性突起10の形成方法について説明する。第2
図において、半導体装置2の所定の電極から延在したア
ルミ電極21に保護用の5in2゜Si、N4等の絶縁
膜21が前記アルミ電極21上のみを開孔するように形
成される。次に、cr−Cu。
Next, a method for forming the conductive projections 10 will be explained. Second
In the figure, an aluminum electrode 21 extending from a predetermined electrode of a semiconductor device 2 is provided with a protective insulating film 21 of 5 inch 2° Si, N4, etc., with holes formed only on the aluminum electrode 21. Next, cr-Cu.

Ti−Pd等の多層金属膜22が、少なくとも前記アル
ミ電極21を覆う如く被着、形成され、ついで電解メッ
キ法により、前記多層金属膜22上に、選択的に導電性
突起10を形成せしめる。前記導電性突起1oは、外部
信号端子と直接、接するもので少なくとも、その表面は
ムUで構成され、外寸は、1oO〜600μm程度の大
きさである。
A multilayer metal film 22 such as Ti--Pd is deposited and formed to cover at least the aluminum electrode 21, and then conductive protrusions 10 are selectively formed on the multilayer metal film 22 by electrolytic plating. The conductive protrusion 1o is in direct contact with an external signal terminal, and at least its surface is made up of a mucus U, and its outer size is about 1oO to 600 μm.

前記導電性突起10が形成されれば、カードの支持体1
2に設けた凹部12aに埋設し、前記導電性突起10が
露出するようにフィルム13で、半導体装置表面および
支持体を覆うものである。
Once the conductive protrusions 10 are formed, the card support 1
The film 13 is buried in a recess 12a provided in the semiconductor device 2 and covers the surface of the semiconductor device and the support body so that the conductive protrusion 10 is exposed.

前記導電性突起10は、前記フィルム13表面から突出
しても良いし、同一表面、あるいは幾分、落ち込んだ状
態のいづれでも良い。
The conductive protrusions 10 may protrude from the surface of the film 13, may be on the same surface, or may be somewhat depressed.

第3図は他の実施例である。FIG. 3 shows another embodiment.

半導体装置2のアルミ電極2o上には弾性を有する導電
性突起10′が設けられ、前記導電性突起10′は、支
持体上のフィルム130表面よりも突出するか、もしく
は同一表面、あるいは落ち込んだ構成である。弾性を有
する導電性突起10′の材料としては、例えばシリコー
ン樹脂の如く柔軟性の材料にC,ムg、Ni、Au  
等の微粉末もしくは繊維を分散させた状態のものを用い
る事ができる。
An elastic conductive protrusion 10' is provided on the aluminum electrode 2o of the semiconductor device 2, and the conductive protrusion 10' protrudes from the surface of the film 130 on the support, is flush with the surface of the film 130, or is depressed. It is the composition. The elastic conductive protrusion 10' may be made of a flexible material such as silicone resin, C, Mg, Ni, or Au.
It is possible to use a fine powder such as or one in which fibers are dispersed.

また、この様な材料においては、その分散の仕方によシ
加圧した時のみ導電性を有する構成とすることもでき、
これらの構成においては、静電気による半導体装置の破
かいを防止できる。
Furthermore, depending on the way the material is dispersed, it can be configured to have conductivity only when pressurized.
In these configurations, damage to the semiconductor device due to static electricity can be prevented.

弾性を有する導電性突起10′の構成は、前記半導体装
置2のアルミ電極2o上に直接成形加工し、設置しても
良いし、フィルム13に前記アルミ電極2oと対応した
位置に孔を設け、この孔に前記導電性突起10′を埋設
せしめ、カード本体に、前記半導体装置2を埋設する段
階において、半導体装置2のアルミ電極2oと位置合せ
し、接着剤23等で固定するものである。
The elastic conductive protrusion 10' may be formed by directly molding and installing it on the aluminum electrode 2o of the semiconductor device 2, or by providing a hole in the film 13 at a position corresponding to the aluminum electrode 2o. The conductive protrusion 10' is embedded in this hole, and when the semiconductor device 2 is embedded in the card body, it is aligned with the aluminum electrode 2o of the semiconductor device 2 and fixed with an adhesive 23 or the like.

発明の効果 以上のように本発明によれば次のような効果を得ること
ができる。
Effects of the Invention As described above, according to the present invention, the following effects can be obtained.

(1)本発明の構成では外部信号端子と接する、半導体
装置側の電極を直接半導体装置自体に形成しているため
に、従来の如く配線基板を必要としない。したがって著
しるしく製造コストを低減できるものである。
(1) In the configuration of the present invention, since the electrodes on the semiconductor device side that are in contact with external signal terminals are formed directly on the semiconductor device itself, there is no need for a wiring board as in the prior art. Therefore, manufacturing costs can be significantly reduced.

(2)また、接続点数が少ないために接続の信頼性が高
い。
(2) Also, the reliability of the connection is high because the number of connection points is small.

(3)半導体装置の外寸が実装面積であるいわゆるチッ
プサイズ実装で、従来の方法よりも実装面積を小さくで
きるばかシでなく、カードへの埋設が容易であり薄型カ
ード特有の曲げ応力に対しても、実装面積が小さいため
に、その影響を受けにくい。したがって、配線を損傷す
る等の事故がないものである。
(3) So-called chip size mounting, in which the external dimensions of the semiconductor device are the mounting area, allows the mounting area to be smaller than conventional methods, is easy to embed in the card, and is resistant to the bending stress peculiar to thin cards. However, since the mounting area is small, it is less affected by this. Therefore, there will be no accidents such as damage to the wiring.

(4)  また、導電性突起を加圧した時のみ導電性を
有する材料で構成すれば、静電気等に対して、前記半導
体装置を安全に保護できるものであ°る。
(4) Furthermore, if the conductive protrusions are made of a material that is conductive only when pressurized, the semiconductor device can be safely protected against static electricity and the like.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例のICカードの要部構成を示
す断面図、第2図、第3図は同IOカードにおける半導
体装置の電極上に導電性突起を形成した状態を示す断面
図、第4図は従来のICカードの構成を示す断面図、第
6図は第4図の平面図、第6図は実装基板を埋設した従
来のICカードの平面図である。 2・・・・・・半導体装置、6・・・・・・カード、1
0・・・・・・導電性突起、10′・・・・・・弾性を
有する導電性突起、11・・・・・・信号端子。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名第1
図      2−≠1)不1 2     12α
FIG. 1 is a cross-sectional view showing the main structure of an IC card according to an embodiment of the present invention, and FIGS. 2 and 3 are cross-sectional views showing conductive protrusions formed on the electrodes of the semiconductor device in the same IO card. 4 is a sectional view showing the structure of a conventional IC card, FIG. 6 is a plan view of FIG. 4, and FIG. 6 is a plan view of a conventional IC card in which a mounting board is embedded. 2... Semiconductor device, 6... Card, 1
0... Conductive protrusion, 10'... Elastic conductive protrusion, 11... Signal terminal. Name of agent: Patent attorney Toshio Nakao and 1 other person No. 1
Figure 2-≠1) Not 1 2 12α

Claims (3)

【特許請求の範囲】[Claims] (1)導電性突起を形成した半導体装置を、少なくとも
前記導電性突起の表面を露出させて、カード本体に埋設
せしめ、前記導電性突起に外部端子を接触させて信号の
授受を行なうように構成したICカード。
(1) A semiconductor device having conductive protrusions formed thereon is embedded in a card body with at least the surface of the conductive protrusions exposed, and external terminals are brought into contact with the conductive protrusions to transmit and receive signals. IC card.
(2)導電性突起が金属である事を特徴とする特許請求
の範囲第1項記載のICカード。
(2) The IC card according to claim 1, wherein the conductive projections are made of metal.
(3)導電性突起が弾性を有する導電性材料である事を
特徴とする特許請求の範囲第1項記載のICカード。
(3) The IC card according to claim 1, wherein the conductive projections are made of an elastic conductive material.
JP60038007A 1985-02-27 1985-02-27 Ic card Pending JPS61196390A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60038007A JPS61196390A (en) 1985-02-27 1985-02-27 Ic card

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60038007A JPS61196390A (en) 1985-02-27 1985-02-27 Ic card

Publications (1)

Publication Number Publication Date
JPS61196390A true JPS61196390A (en) 1986-08-30

Family

ID=12513513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60038007A Pending JPS61196390A (en) 1985-02-27 1985-02-27 Ic card

Country Status (1)

Country Link
JP (1) JPS61196390A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63139976U (en) * 1987-03-05 1988-09-14

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63139976U (en) * 1987-03-05 1988-09-14

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