JPS61194827A - 拡散保護膜形成方法 - Google Patents
拡散保護膜形成方法Info
- Publication number
- JPS61194827A JPS61194827A JP60035992A JP3599285A JPS61194827A JP S61194827 A JPS61194827 A JP S61194827A JP 60035992 A JP60035992 A JP 60035992A JP 3599285 A JP3599285 A JP 3599285A JP S61194827 A JPS61194827 A JP S61194827A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- film
- diffusion
- layer
- monosilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H10P32/00—
Landscapes
- Led Devices (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60035992A JPS61194827A (ja) | 1985-02-25 | 1985-02-25 | 拡散保護膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60035992A JPS61194827A (ja) | 1985-02-25 | 1985-02-25 | 拡散保護膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61194827A true JPS61194827A (ja) | 1986-08-29 |
| JPH0147003B2 JPH0147003B2 (enExample) | 1989-10-12 |
Family
ID=12457325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60035992A Granted JPS61194827A (ja) | 1985-02-25 | 1985-02-25 | 拡散保護膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61194827A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6449234A (en) * | 1987-08-20 | 1989-02-23 | Nec Corp | Semiconductor device |
| JP2015128174A (ja) * | 2002-05-17 | 2015-07-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
1985
- 1985-02-25 JP JP60035992A patent/JPS61194827A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6449234A (en) * | 1987-08-20 | 1989-02-23 | Nec Corp | Semiconductor device |
| JP2015128174A (ja) * | 2002-05-17 | 2015-07-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9847355B2 (en) | 2002-05-17 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Silicon nitride film, and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0147003B2 (enExample) | 1989-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |