JPS61194827A - 拡散保護膜形成方法 - Google Patents
拡散保護膜形成方法Info
- Publication number
- JPS61194827A JPS61194827A JP60035992A JP3599285A JPS61194827A JP S61194827 A JPS61194827 A JP S61194827A JP 60035992 A JP60035992 A JP 60035992A JP 3599285 A JP3599285 A JP 3599285A JP S61194827 A JPS61194827 A JP S61194827A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- film
- diffusion
- layer
- monosilane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 230000001681 protective effect Effects 0.000 title claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 75
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 74
- 238000009792 diffusion process Methods 0.000 claims abstract description 68
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 28
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 19
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 16
- 235000013842 nitrous oxide Nutrition 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000007789 gas Substances 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 10
- 239000012495 reaction gas Substances 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 238000001947 vapour-phase growth Methods 0.000 claims 1
- 238000001312 dry etching Methods 0.000 abstract description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 2
- -1 silicon oxide nitride Chemical class 0.000 abstract 2
- 238000005530 etching Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 231100000989 no adverse effect Toxicity 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60035992A JPS61194827A (ja) | 1985-02-25 | 1985-02-25 | 拡散保護膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60035992A JPS61194827A (ja) | 1985-02-25 | 1985-02-25 | 拡散保護膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61194827A true JPS61194827A (ja) | 1986-08-29 |
| JPH0147003B2 JPH0147003B2 (enrdf_load_stackoverflow) | 1989-10-12 |
Family
ID=12457325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60035992A Granted JPS61194827A (ja) | 1985-02-25 | 1985-02-25 | 拡散保護膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61194827A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6449234A (en) * | 1987-08-20 | 1989-02-23 | Nec Corp | Semiconductor device |
| JP2015128174A (ja) * | 2002-05-17 | 2015-07-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
1985
- 1985-02-25 JP JP60035992A patent/JPS61194827A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6449234A (en) * | 1987-08-20 | 1989-02-23 | Nec Corp | Semiconductor device |
| JP2015128174A (ja) * | 2002-05-17 | 2015-07-09 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9847355B2 (en) | 2002-05-17 | 2017-12-19 | Semiconductor Energy Laboratory Co., Ltd. | Silicon nitride film, and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0147003B2 (enrdf_load_stackoverflow) | 1989-10-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |