JPH0147003B2 - - Google Patents

Info

Publication number
JPH0147003B2
JPH0147003B2 JP3599285A JP3599285A JPH0147003B2 JP H0147003 B2 JPH0147003 B2 JP H0147003B2 JP 3599285 A JP3599285 A JP 3599285A JP 3599285 A JP3599285 A JP 3599285A JP H0147003 B2 JPH0147003 B2 JP H0147003B2
Authority
JP
Japan
Prior art keywords
silicon nitride
film
diffusion
forming
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3599285A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61194827A (ja
Inventor
Akihiro Hashimoto
Masao Kobayashi
Takeshi Kamijo
Takeshi Takamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP60035992A priority Critical patent/JPS61194827A/ja
Publication of JPS61194827A publication Critical patent/JPS61194827A/ja
Publication of JPH0147003B2 publication Critical patent/JPH0147003B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Led Devices (AREA)
JP60035992A 1985-02-25 1985-02-25 拡散保護膜形成方法 Granted JPS61194827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60035992A JPS61194827A (ja) 1985-02-25 1985-02-25 拡散保護膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60035992A JPS61194827A (ja) 1985-02-25 1985-02-25 拡散保護膜形成方法

Publications (2)

Publication Number Publication Date
JPS61194827A JPS61194827A (ja) 1986-08-29
JPH0147003B2 true JPH0147003B2 (enrdf_load_stackoverflow) 1989-10-12

Family

ID=12457325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60035992A Granted JPS61194827A (ja) 1985-02-25 1985-02-25 拡散保護膜形成方法

Country Status (1)

Country Link
JP (1) JPS61194827A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2659193B2 (ja) * 1987-08-20 1997-09-30 日本電気株式会社 半導体装置
TWI288443B (en) * 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof

Also Published As

Publication number Publication date
JPS61194827A (ja) 1986-08-29

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term