JPS6119111B2 - - Google Patents
Info
- Publication number
- JPS6119111B2 JPS6119111B2 JP55097223A JP9722380A JPS6119111B2 JP S6119111 B2 JPS6119111 B2 JP S6119111B2 JP 55097223 A JP55097223 A JP 55097223A JP 9722380 A JP9722380 A JP 9722380A JP S6119111 B2 JPS6119111 B2 JP S6119111B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- insulating material
- semiconductor substrate
- film
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W10/00—
-
- H10W10/01—
-
- H10W10/0145—
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- H10W10/17—
Landscapes
- Element Separation (AREA)
- Local Oxidation Of Silicon (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9722380A JPS5723239A (en) | 1980-07-16 | 1980-07-16 | Manufacture of semiconductor device |
| US06/282,642 US4394196A (en) | 1980-07-16 | 1981-07-13 | Method of etching, refilling and etching dielectric grooves for isolating micron size device regions |
| DE8181105523T DE3177018D1 (en) | 1980-07-16 | 1981-07-14 | Method of manufacturing a semiconductor device comprising a dielectric insulating region |
| DE8686116670T DE3177250D1 (de) | 1980-07-16 | 1981-07-14 | Verfahren zur herstellung einer halbleiteranordnung mit dielektrischen isolationszonen. |
| EP81105523A EP0044082B1 (en) | 1980-07-16 | 1981-07-14 | Method of manufacturing a semiconductor device comprising a dielectric insulating region |
| EP86116670A EP0245538B1 (en) | 1980-07-16 | 1981-07-14 | Method for manufacturing a semiconductor device comprising dielectric isolation regions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9722380A JPS5723239A (en) | 1980-07-16 | 1980-07-16 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5723239A JPS5723239A (en) | 1982-02-06 |
| JPS6119111B2 true JPS6119111B2 (index.php) | 1986-05-15 |
Family
ID=14186628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9722380A Granted JPS5723239A (en) | 1980-07-16 | 1980-07-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5723239A (index.php) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6034034A (ja) * | 1983-08-05 | 1985-02-21 | Hitachi Ltd | 半導体装置 |
| JP2870793B2 (ja) * | 1989-04-14 | 1999-03-17 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6426305B1 (en) | 2001-07-03 | 2002-07-30 | International Business Machines Corporation | Patterned plasma nitridation for selective epi and silicide formation |
| JP2005303253A (ja) * | 2004-03-18 | 2005-10-27 | Fuji Electric Device Technology Co Ltd | 半導体装置の製造方法 |
| KR101575818B1 (ko) | 2009-08-18 | 2015-12-08 | 삼성전자주식회사 | 활성 영역 구조물의 형성방법 |
-
1980
- 1980-07-16 JP JP9722380A patent/JPS5723239A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5723239A (en) | 1982-02-06 |
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