JPS6119102B2 - - Google Patents
Info
- Publication number
- JPS6119102B2 JPS6119102B2 JP55173256A JP17325680A JPS6119102B2 JP S6119102 B2 JPS6119102 B2 JP S6119102B2 JP 55173256 A JP55173256 A JP 55173256A JP 17325680 A JP17325680 A JP 17325680A JP S6119102 B2 JPS6119102 B2 JP S6119102B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- layer
- back surface
- irradiated
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55173256A JPS5797630A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55173256A JPS5797630A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5797630A JPS5797630A (en) | 1982-06-17 |
| JPS6119102B2 true JPS6119102B2 (cg-RX-API-DMAC7.html) | 1986-05-15 |
Family
ID=15957065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55173256A Granted JPS5797630A (en) | 1980-12-10 | 1980-12-10 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5797630A (cg-RX-API-DMAC7.html) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63211635A (ja) * | 1987-02-26 | 1988-09-02 | Nec Corp | 半導体装置 |
| JP2513055B2 (ja) | 1990-02-14 | 1996-07-03 | 日本電装株式会社 | 半導体装置の製造方法 |
| JP4943636B2 (ja) * | 2004-03-25 | 2012-05-30 | エルピーダメモリ株式会社 | 半導体装置及びその製造方法 |
-
1980
- 1980-12-10 JP JP55173256A patent/JPS5797630A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5797630A (en) | 1982-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5185295A (en) | Method for dicing semiconductor substrates using a laser scribing and dual etch process | |
| JP2697812B2 (ja) | 半導体メモリ装置およびその製造方法 | |
| JPH05218472A (ja) | 薄膜構成体のレーザ加工方法 | |
| JPS58169940A (ja) | 半導体装置の製造方法 | |
| US20030067037A1 (en) | Thin phosphorus nitride film as an n-type doping source used in laser doping technology | |
| Harper et al. | Properties of Si diodes prepared by alloying Al into n-type Si with heat pulses from a Nd: YAG laser | |
| JPH0793304B2 (ja) | バンプ電極の形成方法 | |
| EP0028678A2 (en) | Impurity diffusion process for producing a semiconductor device | |
| GB2035690A (en) | Semiconductor device and a method of contacting a partial region of a semiconductor surface | |
| JPS6119102B2 (cg-RX-API-DMAC7.html) | ||
| US3188251A (en) | Method for making semiconductor junction devices | |
| JPS61179578A (ja) | 電界効果トランジスタの製作方法 | |
| JPS5842244A (ja) | 半導体チツプとその支持体との結合方法 | |
| JPS6120338A (ja) | 背面ゲツタリングを有するシリコンウエーハとその製法 | |
| US2761800A (en) | Method of forming p-n junctions in n-type germanium | |
| JPS633447B2 (cg-RX-API-DMAC7.html) | ||
| JPS5650531A (en) | Semiconductor integrated circuit and programming method therefor | |
| JPS5843907B2 (ja) | 半導体集積回路およびその回路プログラム方法 | |
| NL8420336A (nl) | Werkwijze voor het vervaardigen van zonnecellen. | |
| JPS6240119B2 (cg-RX-API-DMAC7.html) | ||
| JPH0147004B2 (cg-RX-API-DMAC7.html) | ||
| GB1125745A (en) | Attaching integrated circuits to substrates | |
| JPS60182132A (ja) | 半導体装置の製造方法 | |
| JPS5929139B2 (ja) | 半導体装置の製造方法 | |
| JPS55111128A (en) | Manufacturing method of semiconductor device |