JPS61190939A - Formation of pattern - Google Patents

Abstract

PURPOSE:To raise the utilization factor of the substrate by a method wherein the second graduated scale is formed in such a way that each grooved strip of the second grooved strip row for graduation constituting the second graduated scale is formed in a depth not to reach the substrate. CONSTITUTION:A mask 12 for processing is formed in such a way that the grooved strips for graduation C-2, C-1, C0, C1 and C2 of a grooved strip row 10 for graduation constituting a graduated scale 11, which is formed in the mask 12 for processing, are formed in a depth not to reach a substrate 1. Therefore, as long as the width of the rectangular pattern of the exposure mask to be used at the time of exposure treatment to a photo resist layer 8 is made narrower compared to the case in the conventional method, that will do. When the same mask for processing as the mask 12 for processing is again formed, the graduated scale in that case can be formed in the region of the mask 12 for processing, wherein the graduated scale 11 is formed, as a graduated scale to cowork with a graduated scale 7. Accordingly, the areas of the graduated scales, which occupy on the substrate 1, are not increased.

Description

DETAILED DESCRIPTION OF THE INVENTION The invention relates to a pattern forming method applied to forming a layer having a desired pattern on a substrate or processing a substrate into a desired pattern. The present invention is particularly suitable for manufacturing semiconductor integrated circuit devices.

2. Description of the Related Art Conventionally, the following pattern forming method has been proposed with reference to FIGS. 1 to 6.

That is, the substrate 1 is prepared in advance (FIG. 1).

A photoresist M2 is then formed on the substrate 1 over the entire area (FIG. 2).

Next, the photoresist layer 2 is subjected to an exposure process using an exposure mask (not shown), and then a development process is performed to form a plurality of, for example, five, rectangular patterns from the photoresist layer 2 having a width Wa. Scale window A-2, A-1, Ao
, A1, A2 are sequentially arranged in the width direction at a pitch pa.
(Figure 3).

In this case, the scale window row 4 that the etching mask 5 has
is the scale window A-2, -1, Ao, which constitutes it.
One side of A1 and A2 is formed so as to coincide with an array line L-L common to them.

Next, by etching the substrate 1 using the etching mask 5, the scale window rows 4 are formed on the surface of the substrate 1.
A scale groove B-2 having a pattern corresponding to
A scale scale 7 is formed by a scale groove array 6 in which B-1, Bo, B, , B2 are arranged (FIG. 4). The scale groove line 6 as the scale scale 7 has a plurality of scale groove lines B-2, B-1, Bo, B1, and B2 on one side of which are connected to the common arrangement line L. - formed to match L.

Next, after removing the etching mask 5, another photoresist layer 1 and 8 are formed on the substrate 1 (FIG. 5).

Next, the photoresist layer 8 is subjected to an exposure process using another exposure mask (not shown), followed by a development process, so that a processing window 9 having a desired pattern is formed from the photoresist layer 8. A processing mask 12 is formed together with a scale groove array 10 as another scale 11 cooperating with the scale 7.

In this case, the scale groove row 10 as the scale scale 11 has, for example, each scale groove row err <+=-2, -1, 0, 1, 2 of the scale groove row 6 as the scale scale 7. ), for example, five scale grooves C-2, C-1, co, C, C2 having a rectangular pattern with the same width WC as the width Wa of They are arranged at a smaller pitch Pa. In addition, multiple scale grooves C
-2, C-1, co, C1, one side of C2 is the array line L
-L.

The above are conventionally proposed pattern forming methods.

According to such a pattern forming method, a layer in contact with the substrate 1 is formed on the substrate 1 using the pattern of the processing window 9 using the processing mask 12, or a layer is formed on the substrate 1 with the pattern of the processing window 9. It can be processed into 9 patterns (ion implantation, etching, etc.).

Further, according to the pattern forming method described above, using the scale scales 7 and 11, which scale grooves in the scale groove array 6 as the scale scale 7 and which scale grooves in the scale groove array 10 as the scale scale 11 are used. Depending on which scale groove lines match or not, the processing window 9 is formed with no positional deviation relative to the reference position on the substrate 1, or is formed with a positional deviation. It is possible to determine whether the positional deviation is within an allowable value.

However, in the case of the pattern forming method described above, when the processing mask 12 is formed to a depth where the processing window 9 reaches the substrate 1, the scale groove as the scale measure 11 is formed. row 10
The scale grooves C1 were also formed to a depth that reached the substrate 1.

Therefore, as described above, the processing window 9 of the processing mask 12 is used to form a layer in contact with the substrate 1 or
At the same time, in the area where the scale scale 11 of the substrate 1 is formed, a layer that is in contact with the pattern of the scale groove row 11 may be formed, or the substrate 1 may be processed. is processed into the pattern of the scale groove array 11. Therefore, after performing the above-described processing using the processing mask 12, it is removed and a processing mask similar to the processing mask 12 described above is used again. , a scale groove array similar to the scale groove array 10 described above is formed in an area other than the area where the scale groove array 10 described above is formed. At the same time, the above-mentioned scale scale 7 also needs to be formed in the area where the newly formed scale groove row is formed.

Therefore, the scale scale as a whole occupies a large area on the substrate 1, which has the disadvantage that the utilization rate of the substrate 1 is poor.

In order to solve the problem, the present invention seeks to propose a new patterning method that does not have the above-mentioned drawbacks.

The pattern forming method according to the present invention includes the following sequential steps.

That is, a first photoresist layer is formed on the substrate in the same manner as described above with reference to FIGS. 1 to 6.

Next, a plurality of first scale windows having a rectangular pattern are formed from the first photoresist layer by exposing the first photoresist layer using a first exposure mask and a subsequent development process. 1 in order in their width direction
An etching mask is formed having a first row of graduation windows arranged at a pitch of .

Next, by etching the substrate using the first etching mask, the surface of the substrate is etched.
A first scale is formed by a first scale groove row having a pattern corresponding to the first scale window row.

Next, after removing the first etching mask, a single layer of the second photoresist 1 is formed on the substrate.

Next, a processing window having a desired pattern is formed from the second photoresist layer by a second exposure treatment using a second exposure mask and a subsequent development treatment on the second photoresist layer. , a plurality of second scale grooves having a rectangular pattern as a second scale scale cooperating with the first scale scale are sequentially arranged in the width direction at a second pitch different from the first scale scale. A processing mask is formed together with a second scale groove array arranged at a pitch.

However, in the pattern forming method according to the present invention, the second scale is formed such that each groove of the second scale groove array constituting it has a depth that does not reach the substrate. Form.

Effects According to the present invention, the above-mentioned conventional drawbacks are not present.

EXAMPLE Next, an example of the pattern forming method according to the present invention will be described.

In the pattern forming method according to the present invention, in the conventional pattern forming method described above in FIG. 1/FIG. 6, in the step of forming the processing mask 12 described above in FIG. As shown in FIG. The process is the same as the pattern forming method described above with reference to FIGS. 1 to 6, except that the processing mask 12 is formed so as to be formed. Note that for this purpose, the width of the rectangular pattern of the exposure mask used during the exposure process for the photoresist layer 8 may be made narrower than in the conventional case.

According to the pattern forming method according to the present invention, the scale groove C1 of the scale groove array 10 as the scale 11 is
Even if it does not reach the substrate 1, the function as the scale scale 11 can be obtained in the same way as in the case described above, and when a processing mask similar to the processing mask 12 is formed again as described above, in that case. The graduation scale can be formed as a cooperating graduation scale of the graduation scale 7 in the area covered by the prefectural tax of the graduation scale 11. Therefore, the area occupied by the scale scale on the substrate 1 does not become large.

[Brief explanation of the drawing]

Figure 1, Figure 2, Figure 3B, Figure 4, Figure 5, Figure 6B
3A and 6 are plan views of FIGS. 3B and 6B, respectively. FIGS. 7A and 7B are a schematic plan view and a sectional view thereof showing an embodiment of the pattern forming method according to the present invention.

Claims (1)

[Scope of Claims] A step of forming a first photoresist layer on a substrate, an exposure treatment using a first exposure mask on the first photoresist layer, and a subsequent development treatment,
From the first photoresist layer, an etching mask having a first scale window row in which a plurality of first scale windows having a rectangular pattern are sequentially arranged at a pitch of 1 in the width direction is formed. a first scale groove having a pattern corresponding to the first scale window row on the surface of the substrate by etching the substrate using the first etching mask; a step of forming a first scale having a row of lines; a step of forming a second photoresist layer on the substrate after removing the first etching mask; and a step of forming a second photoresist layer on the substrate; A processing window having a desired pattern is formed from the second photoresist layer by a second exposure process using a second exposure mask on the photoresist layer and a subsequent development process. a plurality of second scales having a rectangular pattern as second scale scales cooperating with the scale scale;
forming a processing mask in which the scale grooves are formed together with a second scale groove array in which the scale grooves are sequentially arranged in the width direction at a second pitch different from the first pitch; In the pattern forming method, the second scale is formed so that each groove of the second scale groove array constituting it has a depth that does not reach the substrate. A pattern forming method characterized by: