JPS6118866B2 - - Google Patents
Info
- Publication number
- JPS6118866B2 JPS6118866B2 JP50087398A JP8739875A JPS6118866B2 JP S6118866 B2 JPS6118866 B2 JP S6118866B2 JP 50087398 A JP50087398 A JP 50087398A JP 8739875 A JP8739875 A JP 8739875A JP S6118866 B2 JPS6118866 B2 JP S6118866B2
- Authority
- JP
- Japan
- Prior art keywords
- current
- mos
- semiconductor substrate
- contact hole
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087398A JPS5211873A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
| GB29281/76A GB1559581A (en) | 1975-07-18 | 1976-07-14 | Complementary mosfet device |
| FR7621992A FR2318502A1 (fr) | 1975-07-18 | 1976-07-19 | Dispositif perfectionne a transistors a effet de champ a metal-oxyde-semi-conducteur complementaire |
| DE2632420A DE2632420C2 (de) | 1975-07-18 | 1976-07-19 | Halbleitervorrichtung |
| CH923776A CH611740A5 (en) | 1975-07-18 | 1976-07-19 | Semiconductor circuit |
| US05/851,955 US4149176A (en) | 1975-07-18 | 1977-11-16 | Complementary MOSFET device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50087398A JPS5211873A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5211873A JPS5211873A (en) | 1977-01-29 |
| JPS6118866B2 true JPS6118866B2 (enrdf_load_stackoverflow) | 1986-05-14 |
Family
ID=13913759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50087398A Granted JPS5211873A (en) | 1975-07-18 | 1975-07-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5211873A (enrdf_load_stackoverflow) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2141521C3 (de) * | 1971-08-19 | 1984-04-26 | Trumpf & Co, 7257 Ditzingen | Einstelleinrichtung für eine Soll- Hublage des bewegbaren Werkzeugteils einer Stanz- oder Nibbelmaschine |
-
1975
- 1975-07-18 JP JP50087398A patent/JPS5211873A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5211873A (en) | 1977-01-29 |
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