JPS61174686A - 面発光型半導体レ−ザ - Google Patents

面発光型半導体レ−ザ

Info

Publication number
JPS61174686A
JPS61174686A JP1469285A JP1469285A JPS61174686A JP S61174686 A JPS61174686 A JP S61174686A JP 1469285 A JP1469285 A JP 1469285A JP 1469285 A JP1469285 A JP 1469285A JP S61174686 A JPS61174686 A JP S61174686A
Authority
JP
Japan
Prior art keywords
semiconductor laser
layer
emitting semiconductor
layers
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1469285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582758B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Tamotsu Iwasaki
保 岩崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP1469285A priority Critical patent/JPS61174686A/ja
Publication of JPS61174686A publication Critical patent/JPS61174686A/ja
Publication of JPH0582758B2 publication Critical patent/JPH0582758B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06203—Transistor-type lasers
    • H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP1469285A 1985-01-29 1985-01-29 面発光型半導体レ−ザ Granted JPS61174686A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1469285A JPS61174686A (ja) 1985-01-29 1985-01-29 面発光型半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1469285A JPS61174686A (ja) 1985-01-29 1985-01-29 面発光型半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS61174686A true JPS61174686A (ja) 1986-08-06
JPH0582758B2 JPH0582758B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-11-22

Family

ID=11868240

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1469285A Granted JPS61174686A (ja) 1985-01-29 1985-01-29 面発光型半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS61174686A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03178180A (ja) * 1989-12-06 1991-08-02 Mitsubishi Electric Corp 半導体レーザ装置
US5055422A (en) * 1988-12-09 1991-10-08 Thomson-Csf Process for the construction of semiconductor lasers and lasers obtained by the process
US5155560A (en) * 1991-07-22 1992-10-13 Eastman Kodak Company Semiconductor index guided laser diode having both contacts on same surface

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5055422A (en) * 1988-12-09 1991-10-08 Thomson-Csf Process for the construction of semiconductor lasers and lasers obtained by the process
JPH03178180A (ja) * 1989-12-06 1991-08-02 Mitsubishi Electric Corp 半導体レーザ装置
US5155560A (en) * 1991-07-22 1992-10-13 Eastman Kodak Company Semiconductor index guided laser diode having both contacts on same surface

Also Published As

Publication number Publication date
JPH0582758B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-11-22

Similar Documents

Publication Publication Date Title
US7491565B2 (en) III-nitride light emitting devices fabricated by substrate removal
US5337327A (en) VCSEL with lateral index guide
US5208821A (en) Buried heterostructure lasers using MOCVD growth over patterned substrates
US4077817A (en) Making a semiconductor laser structure by liquid phase epitaxy
JPH0864906A (ja) 半導体装置の製法
US6797986B1 (en) Semiconductor light emitting element
JPH0529713A (ja) 半導体レーザ素子
JPH07118572B2 (ja) リッジ導波路半導体レーザおよびその製造方法
JPS61174686A (ja) 面発光型半導体レ−ザ
US4648095A (en) Semiconductor laser
JPH06132608A (ja) 半導体レーザ及びその製造方法
JP3460181B2 (ja) 垂直共振器型発光素子及びその製造方法
JPS61174687A (ja) 面発光型半導体レ−ザ
JPH07115251A (ja) 半導体レーザ
JP3107660B2 (ja) 半導体発光素子
JPS60246689A (ja) 面発光型半導体レ−ザ
JPH05145170A (ja) 面発光レーザ
JP3344633B2 (ja) Ｉｉ−ｖｉ族半導体レーザおよびその形成法
JP2855887B2 (ja) 半導体レーザ及びその製造方法
EP0674367B1 (en) Vertical cavity surface emitting laser with lateral index waveguide
JPH084180B2 (ja) 半導体レ−ザ装置およびその製造方法
JP2001237499A (ja) 半導体発光素子の製造方法
JPH0237789A (ja) 多波長アレーレーザ
JP2000114657A (ja) 面発光型半導体レーザおよび面発光型半導体レーザの製造方法
KR100239767B1 (ko) 반도체 레이저 다이오드의 제조방법