JPS61170035A - 高精度エツチング方法 - Google Patents

高精度エツチング方法

Info

Publication number
JPS61170035A
JPS61170035A JP1046285A JP1046285A JPS61170035A JP S61170035 A JPS61170035 A JP S61170035A JP 1046285 A JP1046285 A JP 1046285A JP 1046285 A JP1046285 A JP 1046285A JP S61170035 A JPS61170035 A JP S61170035A
Authority
JP
Japan
Prior art keywords
etching
wafers
jig
semiconductor wafers
rotated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1046285A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0543176B2 (enrdf_load_stackoverflow
Inventor
Kazuo Sato
和夫 佐藤
Yoji Ogawa
洋司 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP1046285A priority Critical patent/JPS61170035A/ja
Publication of JPS61170035A publication Critical patent/JPS61170035A/ja
Publication of JPH0543176B2 publication Critical patent/JPH0543176B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP1046285A 1985-01-23 1985-01-23 高精度エツチング方法 Granted JPS61170035A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1046285A JPS61170035A (ja) 1985-01-23 1985-01-23 高精度エツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1046285A JPS61170035A (ja) 1985-01-23 1985-01-23 高精度エツチング方法

Publications (2)

Publication Number Publication Date
JPS61170035A true JPS61170035A (ja) 1986-07-31
JPH0543176B2 JPH0543176B2 (enrdf_load_stackoverflow) 1993-06-30

Family

ID=11750798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1046285A Granted JPS61170035A (ja) 1985-01-23 1985-01-23 高精度エツチング方法

Country Status (1)

Country Link
JP (1) JPS61170035A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11066277B2 (en) 2018-04-25 2021-07-20 Otis Elevator Company Gap-reducing sill assembly for an elevator car

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50188A (enrdf_load_stackoverflow) * 1973-04-24 1975-01-06
JPS5521165A (en) * 1978-08-01 1980-02-15 Nec Corp Wafer processing device
JPS5678246U (enrdf_load_stackoverflow) * 1979-11-06 1981-06-25
JPS58157136A (ja) * 1982-03-15 1983-09-19 Hitachi Ltd エツチング装置
JPS59169042U (ja) * 1983-04-26 1984-11-12 日本電気ホームエレクトロニクス株式会社 液処理装置
JPS602830U (ja) * 1983-06-20 1985-01-10 日本電気株式会社 半導体ウエハのエツチング槽

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50188A (enrdf_load_stackoverflow) * 1973-04-24 1975-01-06
JPS5521165A (en) * 1978-08-01 1980-02-15 Nec Corp Wafer processing device
JPS5678246U (enrdf_load_stackoverflow) * 1979-11-06 1981-06-25
JPS58157136A (ja) * 1982-03-15 1983-09-19 Hitachi Ltd エツチング装置
JPS59169042U (ja) * 1983-04-26 1984-11-12 日本電気ホームエレクトロニクス株式会社 液処理装置
JPS602830U (ja) * 1983-06-20 1985-01-10 日本電気株式会社 半導体ウエハのエツチング槽

Also Published As

Publication number Publication date
JPH0543176B2 (enrdf_load_stackoverflow) 1993-06-30

Similar Documents

Publication Publication Date Title
US6179695B1 (en) Chemical mechanical polishing apparatus and method
US4417945A (en) Apparatus for chemical etching of a wafer material
JPH11163103A (ja) 半導体装置の製造方法および製造装置
US6315641B1 (en) Method and apparatus for chemical mechanical polishing
JPS61170035A (ja) 高精度エツチング方法
US3073764A (en) Process for electropolishing semiconductor surfaces
US5681216A (en) High precision polishing tool
JP4062552B2 (ja) 半導体ウエハの位置合わせ及び水張り方法
JPH07164291A (ja) ウェーハ外周部の研磨装置
JPH03154771A (ja) 研磨装置
CN117681061B (en) Hemispherical harmonic oscillator generating and polishing method based on rheological principle
JPS6143431A (ja) エツチング装置
SU1634456A1 (ru) Установка дл гидрообработки деталей
JP3031771B2 (ja) 平面研磨装置
JP2676436B2 (ja) エッチングドラム
JPH04157752A (ja) 縦型半導体製造装置におけるキャリアステージ装置
KR930003270B1 (ko) 웨이퍼 표면연마법
JPS6336939A (ja) 動圧型流体軸受の流体溝形成装置
JPH01201490A (ja) 半導体基板用ウェーハのエッチング方法
KR20230095707A (ko) 기판 처리 장치
JPH04102313A (ja) 半導体製造装置
JPH04201178A (ja) ポリッシング装置とそのポリッシング方法
JP3402181B2 (ja) 枚葉式表面加工装置
JPS58212138A (ja) スライシング装置
JPS62221113A (ja) 回転テ−ブル

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees