JPS6116348B2 - - Google Patents
Info
- Publication number
- JPS6116348B2 JPS6116348B2 JP7785281A JP7785281A JPS6116348B2 JP S6116348 B2 JPS6116348 B2 JP S6116348B2 JP 7785281 A JP7785281 A JP 7785281A JP 7785281 A JP7785281 A JP 7785281A JP S6116348 B2 JPS6116348 B2 JP S6116348B2
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- reaction
- reaction chamber
- barrier
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 239000012495 reaction gas Substances 0.000 claims description 11
- 239000010408 film Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 239000000376 reactant Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明はアモルフアスシリコン生成装置に係
り、特に反応室の内壁へアモルフアスシリコン膜
が堆積することを防止できるようにしたアモルフ
アスシリコン生成装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an amorphous silicon production apparatus, and more particularly to an amorphous silicon production apparatus capable of preventing an amorphous silicon film from being deposited on the inner wall of a reaction chamber.
一般にグロー放電によるアモルフアスシリコン
膜生成法は0.5〜2Torrのモノシラン（SiH4）ガス
中で直流または高周波電源を用いてグロー放電プ
ラズマを作り、アモルフアスシリコン膜を基板上
に生成する方法である。第１図はこの種の装置の
構成の概略を示したものであり、図中符号１は密
閉した反応容器を示し、内部の反応室２内には極
板３と４とが相対向して配置されている。極板３
は導線５を介して電源６の切換スイツチ７に接続
され、電源６は並列接続された直流電源８と高周
波電源９とからなつている。一方、極板４は上記
電源６に導線１０を介して接地された反応容器１
の底板１１と導通している。また、上記反応室２
内には開閉バルブ１２を備えた反応ガス供給管１
３が導かれ、例えばモノシラン（SiH4）ガスが供
給される。さらに、上記反応容器１からは排気パ
イプ１４が導出され、この排気パイプ１４の先は
真空源に接続されている。このような装置によれ
ば、直流電源８または高周波電源９を駆動してグ
ロー放電プラズマを生起し、アモルフアスシリコ
ン膜を形成することができる。 In general, a method for producing an amorphous silicon film by glow discharge is a method in which a glow discharge plasma is created using a direct current or high frequency power supply in monosilane (SiH 4 ) gas at 0.5 to 2 Torr, and an amorphous silicon film is produced on a substrate. FIG. 1 shows the outline of the configuration of this type of apparatus. In the figure, reference numeral 1 indicates a closed reaction vessel, and inside a reaction chamber 2, electrode plates 3 and 4 are placed facing each other. It is located. Pole plate 3
is connected to a changeover switch 7 of a power source 6 via a conductor 5, and the power source 6 consists of a DC power source 8 and a high frequency power source 9 connected in parallel. On the other hand, the electrode plate 4 is connected to the reaction vessel 1 which is grounded to the power source 6 via a conductor 10.
It is electrically connected to the bottom plate 11 of. In addition, the reaction chamber 2
Inside is a reaction gas supply pipe 1 equipped with an on-off valve 12.
3 is introduced and, for example, monosilane (SiH 4 ) gas is supplied. Further, an exhaust pipe 14 is led out from the reaction vessel 1, and the end of the exhaust pipe 14 is connected to a vacuum source. According to such an apparatus, a glow discharge plasma can be generated by driving the DC power supply 8 or the high frequency power supply 9 to form an amorphous silicon film.
しかしながら、従来のこの種の装置は、アモル
フアスシリコン膜の生成の途中で反応室の内壁に
アモルフアスシリコン膜が付着堆積し、数回の生
成で内部が見えなくなり、アモルフアスシリコン
の薄膜の形成状態を外部から観察するうえで支障
を来たしていた。 However, in conventional devices of this kind, the amorphous silicon film adheres and deposits on the inner wall of the reaction chamber during the production of the amorphous silicon film, and the inside becomes invisible after several productions, resulting in the formation of a thin film of amorphous silicon. This was causing problems in observing the situation from the outside.
特に電源として高周波グロー放電を利用した場
合には、堆積したアモルフアスシリコン膜によつ
てグロー放電の状態が変化し再現性のよいアモル
フアスシリコン膜を得ることが難しいという問題
があつた。これを解決するためには、反応室の内
壁を頻繁に洗浄しなけれならず量産のための大き
な隘路となつていた。さらに、反応ガスの導入が
反応室全体に散布するものであるため、グロー放
電中の電極間でガスが均一に混合されないという
問題もあつた。 In particular, when a high frequency glow discharge is used as a power source, there is a problem in that the state of the glow discharge changes depending on the deposited amorphous silicon film, making it difficult to obtain an amorphous silicon film with good reproducibility. In order to solve this problem, the inner wall of the reaction chamber must be frequently cleaned, which has become a major bottleneck in mass production. Furthermore, since the reaction gas is introduced and dispersed throughout the reaction chamber, there is a problem that the gas is not mixed uniformly between the electrodes during glow discharge.
そこで、本発明の目的は、反応室の内壁へアモ
ルフアスシリコン膜が堆積することを防止すると
共にグロー放電中の電極間でのガスの均一分布を
促進させるようにしてアモルフアスシリコン膜を
生成できるようにしたアモルフアスシリコン生成
装置を提供することにある。 Therefore, an object of the present invention is to prevent the amorphous silicon film from being deposited on the inner wall of the reaction chamber, and to promote the uniform distribution of gas between the electrodes during glow discharge, so that the amorphous silicon film can be produced. An object of the present invention is to provide an apparatus for producing amorphous silicon.
上記目的を達成するため本発明は、反応容器の
反応室内に両極板を相対向して配置し、上記反応
室内に反応ガスを供給すると共に反応室内を真空
に近い所定の圧力に保持するようにしたものにお
いて、上記両極板の外側を環状の防壁で取り囲
み、この防壁の内部に反応ガス室を形成してお
き、さらに防壁の内壁に反応ガスの吹出口を形成
したことを特徴としている。 In order to achieve the above object, the present invention provides a method for disposing bipolar plates facing each other in a reaction chamber of a reaction container, supplying a reaction gas into the reaction chamber, and maintaining the inside of the reaction chamber at a predetermined pressure close to vacuum. This is characterized in that the outside of the bipolar plate is surrounded by an annular barrier, a reactive gas chamber is formed inside the barrier, and a reactant gas outlet is formed in the inner wall of the barrier.
以下本発明によるアモルフアスシリコン生成装
置の一実施例を第１図と同一部分に同一符号を付
した第２図および第３図を参照して説明する。 An embodiment of the amorphous silicon production apparatus according to the present invention will be described below with reference to FIGS. 2 and 3, in which the same parts as in FIG. 1 are denoted by the same reference numerals.
第２図において、符号１は密閉した反応容器を
示し、内部の反応室２内には極板３と４とが所定
の距離をおいて相対向して配置されている。極板
３は導線５を介して電源６の切換スイツチ７に接
続され、電源６は並列接続された直流電源８と高
周波電源９とからなつている。一方、極板４は上
記電源６に導線１０を介して接続された反応容器
１の底板１１と導通している。 In FIG. 2, reference numeral 1 designates a closed reaction vessel, in which electrode plates 3 and 4 are placed facing each other at a predetermined distance within a reaction chamber 2. The electrode plate 3 is connected via a conductive wire 5 to a changeover switch 7 of a power source 6, and the power source 6 consists of a DC power source 8 and a high frequency power source 9 connected in parallel. On the other hand, the electrode plate 4 is electrically connected to the bottom plate 11 of the reaction vessel 1, which is connected to the power source 6 via a conductive wire 10.
しかして、本発明によれば、上記陽極板３およ
び陰極板４の外側にはそれらの極板３，４を取り
囲むようにして環状の防壁１５が設けられてい
る。この防壁１５は、第３図から明らかなよう
に、同心的に配置された内壁１６と外壁１７とか
らなり、両壁の間には環状の反応ガス室１８が形
成されている。上記内壁１６には、反応ガス室１
８と連通する吹出口１９が開口し、この吹出口１
９は、好ましくは２つの極板３と４のほゞ中間に
開口するのが良い。 According to the present invention, an annular barrier 15 is provided on the outside of the anode plate 3 and cathode plate 4 so as to surround these plates 3 and 4. As is clear from FIG. 3, this barrier wall 15 consists of an inner wall 16 and an outer wall 17 that are arranged concentrically, and an annular reaction gas chamber 18 is formed between the two walls. The inner wall 16 includes a reaction gas chamber 1
The air outlet 19 that communicates with the air outlet 8 is opened, and this air outlet 1
9 is preferably opened approximately midway between the two electrode plates 3 and 4.
一方、上記外壁１７の下方位置には反応ガス供
給管２０が接続され、図示の実施例ではフレキシ
ブル管が使用されている。 On the other hand, a reactive gas supply pipe 20 is connected to a lower position of the outer wall 17, and a flexible pipe is used in the illustrated embodiment.
また、第２図において反応容器１の底板１１の
ほゞ中央部には真空源に連なる排気管１４が接続
されている。 Further, in FIG. 2, an exhaust pipe 14 connected to a vacuum source is connected to the substantially central portion of the bottom plate 11 of the reaction vessel 1.
上述のように構成された本発明の実施例におい
て、反応ガス例えばモノシラン（SiH4）のガス
は、反応ガス供給管２０を通して環状の反応ガス
室１８内へ導入され、内部で混合されたのち、吹
出口１９より電極板３および４のほゞ中間に噴出
され、この状態で切換スイツチ７をいずれかの電
源に投入すると直流または高周波でグロー放電プ
ラズマを作ることにより例えば極板４の上におか
れた基板の表面にアモルフアスシリコン膜を生成
できる。 In the embodiment of the present invention constructed as described above, a reactant gas such as monosilane (SiH 4 ) is introduced into the annular reactant gas chamber 18 through the reactant gas supply pipe 20 and mixed therein. It is ejected from the air outlet 19 to approximately the middle of the electrode plates 3 and 4, and when the selector switch 7 is turned on to either power source in this state, a glow discharge plasma is created with direct current or high frequency, and it is ejected onto the electrode plate 4, for example. An amorphous silicon film can be produced on the surface of the substrate.
以上述べたように、本発明によれば、両極板の
外側を防壁で取り囲んだから、反応室の不必要な
部分に反応ガスが散布されず反応容器の内壁にア
モルフアスシリコン膜が堆積することがない。ま
た、両極板の間に反応ガスを供給するようにした
からグロー放電中でのガス分布の均一性がより一
層捉進される。さらに、防壁の反応器に対する取
り外しを容易にしておくと、防壁の内側へアモル
フアスシリコン膜が付着した場合であつても内部
の洗浄が容易となる。 As described above, according to the present invention, since the outside of the bipolar plate is surrounded by a barrier, the reaction gas is not sprayed to unnecessary parts of the reaction chamber, and an amorphous silicon film is prevented from being deposited on the inner wall of the reaction chamber. do not have. Furthermore, since the reactive gas is supplied between the two electrode plates, the uniformity of gas distribution during glow discharge is further improved. Furthermore, if the barrier wall is easily removed from the reactor, even if an amorphous silicon film adheres to the inside of the barrier wall, the inside can be easily cleaned.
なお、本発明はグロー放電法を用いる膜形成装
置について広く適用できる。 Note that the present invention can be widely applied to film forming apparatuses that use a glow discharge method.
第１図は従来のアモルフアスシリコン生成装置
を示した縦断面図、第２図は本発明によるアモル
フアスシリコン生成装置の一実施例を示したアモ
ルフアスシリコン生成装置を示した縦断面図、第
３図は本発明の要部を構成する防壁を示した縦断
面図である。
１……反応容器、２……反応室、３……陽極
板、４……陰極板、６……電源、１３……反応ガ
ス供給管、１４……排気パイプ、１５……防壁、
１６……内壁、１７……外壁、１８……反応ガス
室、１９……吹出口。
FIG. 1 is a vertical cross-sectional view showing a conventional amorphous silicon production device, and FIG. 2 is a vertical cross-sectional view showing an amorphous silicon production device showing an embodiment of the amorphous silicon production device according to the present invention. FIG. 3 is a longitudinal cross-sectional view showing a barrier that constitutes the main part of the present invention. DESCRIPTION OF SYMBOLS 1... Reaction container, 2... Reaction chamber, 3... Anode plate, 4... Cathode plate, 6... Power supply, 13... Reaction gas supply pipe, 14... Exhaust pipe, 15... Barrier wall,
16... Inner wall, 17... Outer wall, 18... Reaction gas chamber, 19... Air outlet.
Claims (1)
置し、上記反応室内に反応ガスを供給すると共に
反応室内を真空に近い所定の圧力に保持するよう
にしたものにおいて、上記両極板の外側を環状の
防壁で取り囲み、この防壁の内部に反応ガス室を
形成しておき、さらに防壁の内壁に反応ガスの吹
出口を形成したことを特徴とするアモルフアスシ
リコン生成装置。 ２ 特許請求の範囲第１項記載の装置において、
吹出口は両極板のほゞ中間に位置していることを
特徴とするアモルフアスシリコン生成装置。[Scope of Claims] 1. In a reaction chamber in which bipolar plates are arranged to face each other in a reaction chamber, a reaction gas is supplied into the reaction chamber, and the inside of the reaction chamber is maintained at a predetermined pressure close to vacuum. , an amorphous silicon production device characterized in that the outside of the bipolar plate is surrounded by an annular barrier, a reaction gas chamber is formed inside the barrier, and a reaction gas outlet is further formed in the inner wall of the barrier. . 2. In the device according to claim 1,
An amorphous silicon generating device characterized in that the outlet is located approximately midway between the two electrode plates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7785281A JPS57191218A (en) | 1981-05-22 | 1981-05-22 | Equipment for forming amorphous silicon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7785281A JPS57191218A (en) | 1981-05-22 | 1981-05-22 | Equipment for forming amorphous silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57191218A JPS57191218A (en) | 1982-11-25 |
| JPS6116348B2 true JPS6116348B2 (en) | 1986-04-30 |
Family
ID=13645584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7785281A Granted JPS57191218A (en) | 1981-05-22 | 1981-05-22 | Equipment for forming amorphous silicon |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57191218A (en) |
-
1981
- 1981-05-22 JP JP7785281A patent/JPS57191218A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57191218A (en) | 1982-11-25 |
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