JPS62270777A - Electrode part structure for plasma cvd device - Google Patents
Electrode part structure for plasma cvd deviceInfo
- Publication number
- JPS62270777A JPS62270777A JP11315686A JP11315686A JPS62270777A JP S62270777 A JPS62270777 A JP S62270777A JP 11315686 A JP11315686 A JP 11315686A JP 11315686 A JP11315686 A JP 11315686A JP S62270777 A JPS62270777 A JP S62270777A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- gas
- cylindrical
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 239000007789 gas Substances 0.000 claims abstract description 24
- 239000011261 inert gas Substances 0.000 claims abstract description 11
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 8
- 230000005684 electric field Effects 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 8
- 239000010409 thin film Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000004913 activation Effects 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000077 silane Inorganic materials 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract description 2
- 239000000376 reactant Substances 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000007664 blowing Methods 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000011796 hollow space material Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明は真空容器内で電離気体反応を利用して、又は気
体を活性化させて基板上にその物質の薄膜を形成するプ
ラダｚ ＣＶＤ装置の電極部構造に関する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention utilizes an ionized gas reaction in a vacuum container or activates a gas to form a thin film of the substance on a substrate. The present invention relates to the structure of an electrode part of a PRADA Z CVD apparatus for forming.
従来のプラズマＣＶＤ装置では一般に、高周波電圧が印
加される電極と、基板全支持する手段と、前記基板を加
熱する手段とを設け、前記真空容器内に導入される原料
気体を前記電極により形成される電界によって分解又は
活性化して前記原料気体より薄膜を前記基板上に堆積す
るようにしている。真空容器内は所定の圧力、組成、流
量に保って原料気体は電離、分解、又は活性化されて、
所定の温度に加熱された基板上に薄膜が形成されるので
あるが、基板上以外にも堆積が生じ、これが継続すると
、この部分からはく離が生じフレーク状となって基板上
に付着することがある。これは基板の堆積膜に欠陥を生
ずる原因となり、所望の特性が得られなくなる。このよ
うな堆積及びはく離は特に電極表面で顕著であり、定期
的なりリーニングが必要でおった。装置にぶってはこの
クリーニング作業のため生産性を大きく低下させている
。Conventional plasma CVD apparatuses generally include an electrode to which a high frequency voltage is applied, means for fully supporting the substrate, and means for heating the substrate, and the raw material gas introduced into the vacuum container is formed by the electrode. The raw material gas is decomposed or activated by the electric field, and a thin film is deposited on the substrate from the raw material gas. The inside of the vacuum container is maintained at a predetermined pressure, composition, and flow rate, and the raw material gas is ionized, decomposed, or activated.
A thin film is formed on a substrate that has been heated to a predetermined temperature, but deposits also occur on areas other than the substrate, and if this continues, it may peel off from these areas and become flakes that adhere to the substrate. be. This causes defects in the deposited film on the substrate, making it impossible to obtain desired characteristics. Such deposition and peeling are particularly noticeable on the electrode surface, requiring periodic cleaning. In terms of equipment, this cleaning work greatly reduces productivity.
本発明は上記問題に鑑みてなされ、電極表面への原料気
体の堆積全防ぎ、クリーニングの作業回数を極力少なく
することができる電極部構造を提供することを目的とす
る。The present invention has been made in view of the above-mentioned problems, and an object of the present invention is to provide an electrode part structure that can completely prevent the deposition of raw material gas on the electrode surface and minimize the number of cleaning operations.
以上の目的は、真空容器内に高周波電圧が印加される電
極と、基板を支持する手段と、前記基板を加熱する手段
とを設け、前記真空容器内に導入される原料気体を前記
電極にょシ形成される電界によりて分解又は活性化して
薄膜を前記基板上に堆積するようにしたプラズマＣＶＤ
装置において、前記電極に多数の開口を形成し、こ＼か
ら不活性気体あるいは前記電界により分解又は活性化さ
れても前記基板上に堆積物を形成しない気体を前記真空
容器内へ導出するようにしたことを特徴とする電極部構
造によって達成される。The above object is to provide an electrode to which a high frequency voltage is applied in a vacuum container, a means for supporting a substrate, and a means for heating the substrate, and to direct the raw material gas introduced into the vacuum container to the electrode. Plasma CVD that is decomposed or activated by the generated electric field to deposit a thin film on the substrate.
In the apparatus, a large number of openings are formed in the electrode, from which an inert gas or a gas that does not form a deposit on the substrate even if decomposed or activated by the electric field is led into the vacuum container. This is achieved by an electrode part structure characterized by the following.
〔作 用〕
電極表面に不活性気体又は電界にょシ分解又は活性化さ
れても基板上に堆積物を形成しない気体の層が形成され
、原料気体が電界により分解されて又は活性化されて生
成した堆積物の前駆体が電極面に付着しにく＼なシ、電
、極表面における膜形成速度を大巾に減することができ
る。従ってはく離が生じるまでの期間が長くな）クリー
ニング作業回数を減らすことができ、装置稼動率も向上
することができる。[Function] A layer of gas is formed on the electrode surface that does not form a deposit on the substrate even if it is decomposed or activated by an inert gas or an electric field, and a layer of gas that does not form a deposit on the substrate is formed when the raw material gas is decomposed or activated by the electric field. The rate of film formation on the electrode surface, where the precursor of the deposit is difficult to adhere to the electrode surface, can be greatly reduced. Therefore, it is possible to reduce the number of cleaning operations (the period until peeling occurs) can be reduced, and the operating rate of the apparatus can also be improved.
以下、本発明の実施例によるプラズマＣＶＤ装置につい
て図面を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS A plasma CVD apparatus according to an embodiment of the present invention will be described below with reference to the drawings.
図において、真全容器（１）ははゾ円筒状であシ、この
周壁部を形成するように円筒状の電極（４）が設けられ
、これと他の容器部分との間にはリング状の絶縁材（ａ
ａ、）（ａｂ）が介在している。電極（４）内には円筒
状の中宮間（５）が形成され、その内壁面には多数の小
孔（７）が設けられている。また外壁面にはガス供給口
（６）が設け、られ、と＼を通って不活性ガスタンクα
◆から不活性ガス（例えば、Ｈｅ 、Ａｒ 、 Ｎｅ
、 Ｘｅなどのいずれか）が中空間（５）内に導入され
る。In the figure, the true container (1) has a cylindrical shape, and a cylindrical electrode (4) is provided to form the peripheral wall of the container, and a ring-shaped electrode (4) is provided between this and other container parts. insulation material (a
a, ) (ab) are intervening. A cylindrical inner wall (5) is formed within the electrode (4), and a large number of small holes (7) are provided on the inner wall surface of the inner wall. In addition, a gas supply port (6) is provided on the outer wall surface, and a gas supply port (6) is provided through the inert gas tank α.
◆ to inert gas (e.g. He, Ar, Ne
, Xe, etc.) is introduced into the hollow space (5).
容器（１）内には円筒状の基板（８）（例えばシリコン
等の半導体やアルミニウム等の金属〕が基板支持台（６
）に取υ付けられ、回転駆動機構ＱＯによって回転させ
られるようになっている。基板（８）内にはヒーターが
配設され、これは外部の電源（５ンにより所定の電流が
供給される。容器（１）の土壁部に形成されるガス供給
口（４）を通って反応ガスタンク（至）から反応ガス（
例えばシラン）が容器（１）内に導入される。容器（２
）の下壁部には排気口（２）が形成され、これは図示せ
ずとも排気機構に接続される。電極（４）には図示する
ように高周波交流電源（８ンが接続される。Inside the container (1), a cylindrical substrate (8) (for example, a semiconductor such as silicon or a metal such as aluminum) is placed on a substrate support stand (6).
), and is rotated by a rotary drive mechanism QO. A heater is disposed inside the substrate (8), and a predetermined current is supplied to this by an external power supply (5). from the reaction gas tank (to) to the reaction gas (
eg silane) is introduced into the container (1). Container (2
) is formed with an exhaust port (2), which is connected to an exhaust mechanism (not shown). A high frequency AC power source (8) is connected to the electrode (4) as shown in the figure.
本発明の実施例は以上のように構成されるが、次にこの
作用、効果などについて説明する。The embodiment of the present invention is configured as described above, and its operation, effects, etc. will be explained next.
まず、真空容器（１）内は排気機構により排気口（２）
を介して所定の冥黛度にまで排気される。次いでヒータ
ｑηに通電され、これにより基板（８）は所定の温度に
まで加熱される。更に所定の圧力及び流量で反応ガスタ
ンク（２）から反応ガスが容易（１）内に導入される。First, inside the vacuum container (1), an exhaust port (2) is opened by the exhaust mechanism.
is exhausted to a predetermined level of darkness. Next, the heater qη is energized, thereby heating the substrate (8) to a predetermined temperature. Furthermore, a reaction gas is introduced into the tube (1) from the reaction gas tank (2) at a predetermined pressure and flow rate.
また不活性ガスタンクα脣からの不活性ガスが電極（４
）の内壁面の小孔（７）から容器（１）内に導入される
。In addition, the inert gas from the inert gas tank α is supplied to the electrode (4
) is introduced into the container (1) through a small hole (7) in the inner wall surface of the container (1).
容器（１）内が定常状態に達した後、高周波電源（ト）
が駆動され、電極（４）に高周波電圧が印加される。After the inside of the container (1) reaches a steady state, the high frequency power source (T) is turned on.
is driven, and a high frequency voltage is applied to the electrode (4).
容器（１）内に導入された反応ガスは電極（４）によっ
て形成される電界によりミ離される。もしくは活性化さ
れる。これにより反応ガス物質が基板（８）上に堆積す
る。基板（８）は回転駆動機構αｑによ多回転させられ
ているので基板（８）上には一様な層厚で反応ガス物質
が堆積する。The reactant gas introduced into the container (1) is separated by the electric field formed by the electrode (4). Or activated. This causes reactive gaseous substances to be deposited on the substrate (8). Since the substrate (8) is rotated many times by the rotation drive mechanism αq, the reactive gas substance is deposited on the substrate (8) with a uniform layer thickness.
電極（４）の内壁面の多数の小孔（７）からは不活性ガ
スが吹き出しておシ、このガスが電極表面にガス層を形
成しているので電離空間もしくは活性化組閣から供給さ
れてくる堆積の前駆物質を電極表面に極力付着させない
ようにすることができる。従ってはく離が生ずるほど堆
積層が厚くなるまでの期間が相幽長くなシ、クリ−ニン
グ作業の回数を減少させることができる。またこれによ
り装置稼動率を向上させることができる。Inert gas is blown out from the many small holes (7) on the inner wall of the electrode (4), and since this gas forms a gas layer on the electrode surface, it is supplied from the ionization space or activation cabinet. Therefore, it is possible to prevent the deposition precursors from adhering to the electrode surface as much as possible. Therefore, the period until the deposited layer becomes thick enough to cause peeling is relatively long, and the number of cleaning operations can be reduced. This also allows the device operating rate to be improved.
以上、本発明の実施例について説明したが、勿論、本発
明はこれに限定されることなく、本発明の技術的思想に
基づいて種々の変形が可能である。The embodiments of the present invention have been described above, but of course the present invention is not limited thereto, and various modifications can be made based on the technical idea of the present invention.
例えば以上の実施例では電極（４）の小孔（７）から不
活性ガスを吹き出すようにしたが、これに代えて電界に
より分解されても、あるいは活性化されても堆積物を生
じない気体、例えば凡やハロゲン系のエツチングガスな
どが用いられてもよい。For example, in the above embodiment, an inert gas is blown out from the small hole (7) of the electrode (4), but instead of this, a gas that does not generate deposits even if it is decomposed or activated by an electric field can be used. For example, a halogen-based etching gas or the like may be used.
また以上の実施例では真空容器（１）の口壁の一部を構
成するように電極（４）を設けたが、これに代え、同様
な形状の電極を円筒状容器内に同軸的に配設するように
してもよい。また１通常の平行平板型プラズマＣＶＤ装
置の高周波電極にも本発明は適用可能である。Further, in the above embodiment, the electrode (4) was provided so as to constitute a part of the mouth wall of the vacuum container (1), but instead of this, an electrode of a similar shape was arranged coaxially within the cylindrical container. You may also set it. Furthermore, the present invention can also be applied to a high frequency electrode of a normal parallel plate type plasma CVD apparatus.
また以上の実施例では電極に小孔を多数形成し友が、こ
れに代え、多数のスリットを形成するようにしてもよい
。Furthermore, in the above embodiments, instead of forming a large number of small holes in the electrode, a large number of slits may be formed in the electrode.
以上述べたように本発明のプラズマＣＶＤ装置における
電極部構造によれば、電極面のりｙ−＝ングのサイクル
を大巾に長くすることができ、装置稼動率を向上させる
ことができる。ま次製品の安定化を図ることができる。As described above, according to the structure of the electrode part in the plasma CVD apparatus of the present invention, the cycle of electrode surface bonding can be greatly lengthened, and the operating rate of the apparatus can be improved. It is possible to stabilize the next product.
図面は本発明の実施例のプラズマＣＶＤ装置の縦断面図
である。
なお図において、The drawing is a longitudinal sectional view of a plasma CVD apparatus according to an embodiment of the present invention. In the figure,
Claims (1)
持する手段と、前記基板を加熱する手段とを設け、前記
真空容器内に導入される原料気体を前記電極により形成
される電界によって分解又は活性化して薄膜を前記基板
上に堆積するようにしたプラズマＣＶＤにおいて、前記
電極に多数の開口を形成し、こゝから不活性気体あるい
は前記電界により分解又は活性化されても前記基板上に
堆積物を形成しない気体を前記真空容器内へ導出するよ
うにしたことを特徴とする電極部構造。An electrode to which a high frequency voltage is applied, a means for supporting a substrate, and a means for heating the substrate are provided in the vacuum container, and the raw material gas introduced into the vacuum container is decomposed by the electric field formed by the electrode. Alternatively, in plasma CVD in which a thin film is deposited on the substrate by activation, a large number of openings are formed in the electrode, so that even if the electrode is decomposed or activated by an inert gas or the electric field, the thin film will not be deposited on the substrate. An electrode part structure characterized in that a gas that does not form deposits is led into the vacuum container.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11315686A JPS62270777A (en) | 1986-05-16 | 1986-05-16 | Electrode part structure for plasma cvd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11315686A JPS62270777A (en) | 1986-05-16 | 1986-05-16 | Electrode part structure for plasma cvd device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62270777A true JPS62270777A (en) | 1987-11-25 |
| JPH0411628B2 JPH0411628B2 (en) | 1992-03-02 |
Family
ID=14604981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11315686A Granted JPS62270777A (en) | 1986-05-16 | 1986-05-16 | Electrode part structure for plasma cvd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62270777A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0347971A (en) * | 1989-04-20 | 1991-02-28 | Alps Electric Co Ltd | Method for synthesis by plasma cvd |
| JP2001240971A (en) * | 2000-03-01 | 2001-09-04 | Kobe Steel Ltd | Thin film forming apparatus |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4252702B2 (en) * | 2000-02-14 | 2009-04-08 | 株式会社荏原製作所 | Apparatus and method for preventing adhesion of reaction by-products in piping |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391665A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Plasma cvd device |
-
1986
- 1986-05-16 JP JP11315686A patent/JPS62270777A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5391665A (en) * | 1977-01-24 | 1978-08-11 | Hitachi Ltd | Plasma cvd device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0347971A (en) * | 1989-04-20 | 1991-02-28 | Alps Electric Co Ltd | Method for synthesis by plasma cvd |
| JP2001240971A (en) * | 2000-03-01 | 2001-09-04 | Kobe Steel Ltd | Thin film forming apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0411628B2 (en) | 1992-03-02 |
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