JPS6115976A - プラズマ反応装置およびその使用方法 - Google Patents
プラズマ反応装置およびその使用方法Info
- Publication number
- JPS6115976A JPS6115976A JP13815384A JP13815384A JPS6115976A JP S6115976 A JPS6115976 A JP S6115976A JP 13815384 A JP13815384 A JP 13815384A JP 13815384 A JP13815384 A JP 13815384A JP S6115976 A JPS6115976 A JP S6115976A
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- reaction
- substrate
- reaction tube
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 238000010438 heat treatment Methods 0.000 claims abstract description 3
- 239000007789 gas Substances 0.000 claims description 17
- 239000012495 reaction gas Substances 0.000 claims description 8
- 238000003780 insertion Methods 0.000 claims description 4
- 230000037431 insertion Effects 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 claims 1
- 239000000428 dust Substances 0.000 abstract description 7
- 230000000694 effects Effects 0.000 abstract description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13815384A JPS6115976A (ja) | 1984-07-03 | 1984-07-03 | プラズマ反応装置およびその使用方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13815384A JPS6115976A (ja) | 1984-07-03 | 1984-07-03 | プラズマ反応装置およびその使用方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6115976A true JPS6115976A (ja) | 1986-01-24 |
JPH0355552B2 JPH0355552B2 (enrdf_load_stackoverflow) | 1991-08-23 |
Family
ID=15215253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13815384A Granted JPS6115976A (ja) | 1984-07-03 | 1984-07-03 | プラズマ反応装置およびその使用方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6115976A (enrdf_load_stackoverflow) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998058731A3 (en) * | 1997-06-20 | 1999-05-27 | Flowgenix Corp | Apparatus for exposing substrates to gas-phase radicals |
WO2003029516A1 (en) * | 2001-09-29 | 2003-04-10 | Cree, Inc. | Apparatus for inverted cvd |
KR100745130B1 (ko) | 2006-02-09 | 2007-08-01 | 삼성전자주식회사 | 박막 증착 장치 및 방법 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53101276A (en) * | 1977-02-16 | 1978-09-04 | Hitachi Ltd | Decompression cvd device |
-
1984
- 1984-07-03 JP JP13815384A patent/JPS6115976A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53101276A (en) * | 1977-02-16 | 1978-09-04 | Hitachi Ltd | Decompression cvd device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998058731A3 (en) * | 1997-06-20 | 1999-05-27 | Flowgenix Corp | Apparatus for exposing substrates to gas-phase radicals |
WO2003029516A1 (en) * | 2001-09-29 | 2003-04-10 | Cree, Inc. | Apparatus for inverted cvd |
US8133322B2 (en) | 2001-09-29 | 2012-03-13 | Cree, Inc. | Apparatus for inverted multi-wafer MOCVD fabrication |
KR100745130B1 (ko) | 2006-02-09 | 2007-08-01 | 삼성전자주식회사 | 박막 증착 장치 및 방법 |
US7781032B2 (en) | 2006-02-09 | 2010-08-24 | Samsung Electronics Co., Ltd. | Method for depositing a thin film |
Also Published As
Publication number | Publication date |
---|---|
JPH0355552B2 (enrdf_load_stackoverflow) | 1991-08-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |