WO1998058731A3 - Apparatus for exposing substrates to gas-phase radicals - Google Patents

Apparatus for exposing substrates to gas-phase radicals

Info

Publication number
WO1998058731A3
WO1998058731A3 PCT/US1998/012170 US9812170W WO1998058731A3 WO 1998058731 A3 WO1998058731 A3 WO 1998058731A3 US 9812170 W US9812170 W US 9812170W WO 1998058731 A3 WO1998058731 A3 WO 1998058731A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
gas
substrates
radicals
phase
flow
Prior art date
Application number
PCT/US1998/012170
Other languages
French (fr)
Other versions
WO1998058731A2 (en )
Inventor
Steven L Koontz
James E Pearson
Original Assignee
Flowgenix Corp
Steven L Koontz
James E Pearson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/16Surface shaping of articles, e.g. embossing; Apparatus therefor by wave energy or particle radiation, e.g. infra-red heating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894Processes carried out in the presence of a plasma
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B29WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
    • B29CSHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C35/00Heating, cooling or curing, e.g. crosslinking or vulcanising; Apparatus therefor
    • B29C35/02Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould
    • B29C35/08Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation
    • B29C35/0866Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation
    • B29C2035/0872Heating or curing, e.g. crosslinking or vulcanizing during moulding, e.g. in a mould by wave energy or particle radiation using particle radiation using ion-radiation, e.g. alpha-rays

Abstract

A reactor for exposing substrates to a gas flow comprising gas-phase radicals to functionalize the substrates. The reactor includes a gas ionizer for generating gas-phase radicals in a flow of supply gas. The resulting ionized gas, including the gas-phase radicals, flows into a gas chamber. The gas chamber includes a substrate support which supports substrate materials so they are exposed to the gas-phase radicals contained within the gas flow. A decay zone is positioned between the substrates and the gas ioniser that allow harmful constituents contained within the flow to decay before reaching the substrates. A blocker is positioned between the gas ionizer and the substrates to prevent harmful ultraviolet radiation from striking the substrates. The gas chamber and substrate support are sized to allow a plurality of substrates to be introduced therein and simultaneously functionalized, permitting the reactor to be used for commercial-scale functionalization of the substrates. In one embodiment, the substrates are repositioned within the gas chamber to account for any gradients in concentration of the gas-phase radicals. In a further embodiment, a barrier within the gas chamber uniformly directs flow over the substrate support to convect the gas-phase radicals in close proximity to the substrates. In yet a further embodiment, a substrate moving device passes a continuous elongated substrate through the reaction zone. In still further embodiments the flow containing gas-phase radicals is directed toward the substrates from above or below the substrates to suspend the substrates in the flow.
PCT/US1998/012170 1997-06-20 1998-06-22 Apparatus for exposing substrates to gas-phase radicals WO1998058731A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US87940497 true 1997-06-20 1997-06-20
US08/879,404 1997-06-20

Publications (2)

Publication Number Publication Date
WO1998058731A2 true WO1998058731A2 (en) 1998-12-30
WO1998058731A3 true true WO1998058731A3 (en) 1999-05-27

Family

ID=25374089

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1998/012170 WO1998058731A3 (en) 1997-06-20 1998-06-22 Apparatus for exposing substrates to gas-phase radicals

Country Status (1)

Country Link
WO (1) WO1998058731A3 (en)

Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4192706A (en) * 1975-01-22 1980-03-11 Tokyo Shibaura Electric Co., Ltd. Gas-etching device
JPS56147832A (en) * 1980-04-16 1981-11-17 Toshiba Corp Surface treating device
JPS5712032A (en) * 1980-06-26 1982-01-21 Sekisui Chem Co Ltd Apparatus for treatment with activated gas
JPS5840833A (en) * 1981-09-04 1983-03-09 Toshiba Corp Nitride film production device
US4397885A (en) * 1980-08-22 1983-08-09 Tokyo Shibaura Denki Kabushiki Kaisha Method and apparatus for treating fluorescent substance
US4401054A (en) * 1980-05-02 1983-08-30 Nippon Telegraph & Telephone Public Corporation Plasma deposition apparatus
JPS58208326A (en) * 1982-05-31 1983-12-05 Hashimoto Forming Co Ltd Plasma treatment
US4451499A (en) * 1979-07-24 1984-05-29 Futaba Denshi Kogyo Kabushiki Kaisha Method for producing a beryllium oxide film
EP0117541A2 (en) * 1983-02-25 1984-09-05 Toyota Jidosha Kabushiki Kaisha Apparatus for plasma treatment of resin material
EP0127149A2 (en) * 1983-05-31 1984-12-05 Idemitsu Petrochemical Co. Ltd. A method for the treatment of a thermoplastic resin
JPS6115976A (en) * 1984-07-03 1986-01-24 Matsushita Electric Ind Co Ltd Plasma reaction device and method for use thereof
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPS61281132A (en) * 1985-06-05 1986-12-11 Mazda Motor Corp Plasma treating apparatus
US4738748A (en) * 1983-09-30 1988-04-19 Fujitsu Limited Plasma processor and method for IC fabrication
US4831963A (en) * 1986-02-04 1989-05-23 Hitachi, Ltd. Plasma processing apparatus
JPH01236938A (en) * 1988-03-17 1989-09-21 Nissin Electric Co Ltd Plasma generator
JPH01279747A (en) * 1988-05-06 1989-11-10 Tobi Co Ltd Device for forming film by plasma beam
EP0606014A1 (en) * 1992-12-28 1994-07-13 Bridgestone Corporation Surface treating method
US5369012A (en) * 1992-03-26 1994-11-29 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of making a membrane having hydrophilic and hydrophobic surfaces for adhering cells or antibodies by using atomic oxygen or hydroxyl radicals
EP0630087A2 (en) * 1993-06-18 1994-12-21 Fuji Photo Film Co., Ltd. Apparatus for allowing web-like material to be subjected to vacuum glow-discharging treatment and method of conducting vacuum glow-discharging treatment
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas

Patent Citations (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4192706A (en) * 1975-01-22 1980-03-11 Tokyo Shibaura Electric Co., Ltd. Gas-etching device
US4451499A (en) * 1979-07-24 1984-05-29 Futaba Denshi Kogyo Kabushiki Kaisha Method for producing a beryllium oxide film
JPS56147832A (en) * 1980-04-16 1981-11-17 Toshiba Corp Surface treating device
US4401054A (en) * 1980-05-02 1983-08-30 Nippon Telegraph & Telephone Public Corporation Plasma deposition apparatus
JPS5712032A (en) * 1980-06-26 1982-01-21 Sekisui Chem Co Ltd Apparatus for treatment with activated gas
US4397885A (en) * 1980-08-22 1983-08-09 Tokyo Shibaura Denki Kabushiki Kaisha Method and apparatus for treating fluorescent substance
JPS5840833A (en) * 1981-09-04 1983-03-09 Toshiba Corp Nitride film production device
JPS58208326A (en) * 1982-05-31 1983-12-05 Hashimoto Forming Co Ltd Plasma treatment
EP0117541A2 (en) * 1983-02-25 1984-09-05 Toyota Jidosha Kabushiki Kaisha Apparatus for plasma treatment of resin material
EP0127149A2 (en) * 1983-05-31 1984-12-05 Idemitsu Petrochemical Co. Ltd. A method for the treatment of a thermoplastic resin
US4738748A (en) * 1983-09-30 1988-04-19 Fujitsu Limited Plasma processor and method for IC fabrication
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JPS6115976A (en) * 1984-07-03 1986-01-24 Matsushita Electric Ind Co Ltd Plasma reaction device and method for use thereof
JPS61281132A (en) * 1985-06-05 1986-12-11 Mazda Motor Corp Plasma treating apparatus
US4831963A (en) * 1986-02-04 1989-05-23 Hitachi, Ltd. Plasma processing apparatus
JPH01236938A (en) * 1988-03-17 1989-09-21 Nissin Electric Co Ltd Plasma generator
JPH01279747A (en) * 1988-05-06 1989-11-10 Tobi Co Ltd Device for forming film by plasma beam
US5369012A (en) * 1992-03-26 1994-11-29 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method of making a membrane having hydrophilic and hydrophobic surfaces for adhering cells or antibodies by using atomic oxygen or hydroxyl radicals
EP0606014A1 (en) * 1992-12-28 1994-07-13 Bridgestone Corporation Surface treating method
EP0630087A2 (en) * 1993-06-18 1994-12-21 Fuji Photo Film Co., Ltd. Apparatus for allowing web-like material to be subjected to vacuum glow-discharging treatment and method of conducting vacuum glow-discharging treatment
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 006, no. 031 (C - 092) 24 February 1982 (1982-02-24) *
PATENT ABSTRACTS OF JAPAN vol. 006, no. 073 (C - 101) 8 May 1982 (1982-05-08) *
PATENT ABSTRACTS OF JAPAN vol. 007, no. 123 (E - 178) 27 May 1983 (1983-05-27) *
PATENT ABSTRACTS OF JAPAN vol. 008, no. 052 (C - 213) 9 March 1984 (1984-03-09) *
PATENT ABSTRACTS OF JAPAN vol. 010, no. 161 (C - 352) 10 June 1986 (1986-06-10) *
PATENT ABSTRACTS OF JAPAN vol. 011, no. 141 (C - 421) 8 May 1987 (1987-05-08) *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 569 (C - 666) 15 December 1989 (1989-12-15) *
PATENT ABSTRACTS OF JAPAN vol. 014, no. 047 (C - 0682) 29 January 1990 (1990-01-29) *

Also Published As

Publication number Publication date Type
WO1998058731A2 (en) 1998-12-30 application

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