JPS61157114A - Output circuit - Google Patents

Output circuit

Info

Publication number
JPS61157114A
JPS61157114A JP59277438A JP27743884A JPS61157114A JP S61157114 A JPS61157114 A JP S61157114A JP 59277438 A JP59277438 A JP 59277438A JP 27743884 A JP27743884 A JP 27743884A JP S61157114 A JPS61157114 A JP S61157114A
Authority
JP
Japan
Prior art keywords
contact
high level
transistor
output
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59277438A
Other languages
Japanese (ja)
Other versions
JPH0618322B2 (en
Inventor
Yasaburou Inagaki
稲垣 ▲?▼三郎
Kazuo Nakaizumi
中泉 一雄
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59277438A priority Critical patent/JPH0618322B2/en
Publication of JPS61157114A publication Critical patent/JPS61157114A/en
Publication of JPH0618322B2 publication Critical patent/JPH0618322B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Logic Circuits (AREA)

Abstract

PURPOSE:To bring an output high level to a power voltage level without causing latch up even when an abnormal noise is applied to the output by constituting the output circuit with the 1st conduction type 1st transistor (TR) whose source is connected to the 1st power supply, the 2nd conductor type 2nd-6th TRs whose sources are connected to the 2nd power supply, a delay circuit and a static capacitor. CONSTITUTION:When the level of an input terminal IN changes from a high level to a low level at a time t1, a TRQ3 is turned on, the 1st contact 1 goes to a high level, then the 3rd and 4th TRS Q5, Q7 are turned on and the 2nd contact 2 and an output terminal OUT go to a high level. However, the high level of the 2nd contact 2 is VCC-VTH and the high level of the output terminal OUT is VCC-2VTH, where VTH is a threshold voltage of TRs. A static capacitor C is charged during this time. When a contact 3 at the output terminal of a delay circuit 4 goes to a high level at a time t2, the high level of the 2nd contact 2 is boosted to a value VCC+VTH or over by the coupling of the capacitor C and the high level of the output terminal OUT goes to the VCC.

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は出力回路に関し、特に0M08回路で構成ざf
’L次出力出力回路する。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an output circuit, and particularly to an output circuit composed of a 0M08 circuit.
'L order output output circuit.

(従来の技術) 従来、0M08回路は、製造工程が複雑であるにもかか
わらず、消費電力が少なく、電源動作マージ/が広いと
いう利点を有しているので0M08回路を用い九集積回
路が多く作られている。
(Prior art) Conventionally, although the manufacturing process is complicated, the 0M08 circuit has the advantages of low power consumption and wide power supply operation margin, so the 0M08 circuit has been used in many integrated circuits. It is made.

(発明が解決しようとする問題点) 0MO8回路においては、入出力端子に異常なノイズが
印加されると、0MO8回路特有のラッチアップが起る
九め、異常なノイズが加わらないように工夫する必要が
めった。
(Problems to be Solved by the Invention) In the 0MO8 circuit, when abnormal noise is applied to the input/output terminals, latch-up, which is unique to the 0MO8 circuit, will occur.9th, measures should be taken to prevent the addition of abnormal noise. I rarely needed it.

第4図は従来の0M08回路を用い比出力回路の一例の
回路図、第5図は第4図に示す出力回路のラッチアップ
を説明する九めO模式図である。
FIG. 4 is a circuit diagram of an example of a ratio output circuit using a conventional 0M08 circuit, and FIG. 5 is a schematic diagram illustrating latch-up of the output circuit shown in FIG. 4.

P型半導体基板11KNウェル12t−形成し、Nウェ
ル12内にP 拡散領域16,17を形成してソース・
ドレイン領域とし、ゲート20とでNチャンネルトラン
ジスタQ2を構成する。Nフェル12以外の領域にN 
拡散領域13,14t−形成してソース・ドレイン領域
とし、ゲート19とでPチャンネルトランジスタQ2を
構成する。
A P type semiconductor substrate 11KN well 12t is formed, P diffusion regions 16 and 17 are formed in the N well 12, and a source
The drain region and the gate 20 constitute an N-channel transistor Q2. N in areas other than N Fell 12
Diffusion regions 13 and 14t are formed to serve as source/drain regions, and together with a gate 19 constitute a P-channel transistor Q2.

このように構成すると、図示するように、寄生NPN 
トランジスタ’I’、、’I’、と寄生PNP トラン
ジスタT8 、T4が形成さnる。
With this configuration, as shown in the figure, the parasitic NPN
Transistors 'I', , 'I' and parasitic PNP transistors T8 and T4 are formed.

今、出力にVCC+VF(PN接合の順方向電圧)以上
のノイズが加わると、出力からNフェル2に電流が流れ
、寄生PNP トランジスタT3がオンし、出力から基
板lに電流が流れて基板レベルが浮く。基板レベルが浮
くと寄生NPN トランジスタT2がオンし5vccか
らGNDへ電流が流れNウェル電位が低下する。Nウェ
ル電位が低下すると寄生PNP ?ランジスタテ4がオ
ンしVCCから基板へ電流が流れ基板レベルをさらに浮
かせる。
Now, when noise greater than VCC + VF (forward voltage of PN junction) is added to the output, current flows from the output to Nfer 2, turns on the parasitic PNP transistor T3, and current flows from the output to the substrate l, lowering the substrate level. float. When the substrate level rises, the parasitic NPN transistor T2 turns on, current flows from 5Vcc to GND, and the N-well potential drops. Parasitic PNP when the N-well potential decreases? The transistor state 4 is turned on and current flows from VCC to the board, further raising the board level.

このように一度を生NPN トランジスタT2と寄生P
NP )ランジスタT4がオンすると出力に加わりてい
几ノイズが無くなってもVCCからGNDへ電流が流れ
続はラッチアップが起る。
In this way, once the NPN transistor T2 and the parasitic P
NP) When transistor T4 is turned on, it is added to the output, and even if the noise disappears, current continues to flow from VCC to GND, causing latch-up.

本発明の目的は出力に異常なノイズが印加されてもラッ
チアップを起さず、出力ハイレベルが電源電圧レベルに
なる出力回路を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention is to provide an output circuit that does not cause latch-up even when abnormal noise is applied to the output, and whose output high level becomes the power supply voltage level.

(問題点を解決するための手段) 本発明の出力回路は、ドレインを第10接点にゲートを
入力端子にソースを第10電源に接続した第10導電型
の第10トランジスタと、ドレイ      1ンを前
記第10接点にゲートを入力端子にソースを第2の電源
に接続し7?、第2導電型の第2トラ7ジxpと、ドレ
インを前記第10電源にゲートを前記第10接点にソー
スt−第2の接点に接続した第2導電型の第3トランジ
スタと、ドレインを前記第2の接点にゲートを入力端子
にノースを前記第2の電源に接続した第2導電屋の第4
トランジスタと、ドレイ/を前記第10電源にゲートt
−前記第2の接点にソースを出力端子に接続した第2導
電型の第5トランジスタと、ドレインを出りl子にゲー
トを入力端子にソースを前記第2の電源に接続した第2
導電盟の第6トランジスタと、入力端を前記第2の接点
に出力端を第3の接点に接続した遅延回路と、一方の端
子を前記第2の接点に他方の端子を前記第3の接点に接
続した静電容量とを含んで構成される。
(Means for Solving the Problems) The output circuit of the present invention includes a tenth transistor of a tenth conductivity type in which the drain is connected to a tenth contact, the gate is connected to an input terminal, and the source is connected to a tenth power supply; Connect the gate to the input terminal and the source to the second power supply to the 10th contact 7? , a second transistor of a second conductivity type, a third transistor of a second conductivity type, the drain of which is connected to the tenth power supply, the gate of which is connected to the tenth contact, and the source of which is connected to the second contact; A fourth conductor of the second conductor has a gate connected to the second contact, an input terminal, and a north connected to the second power supply.
a transistor, a drain/gate t to the tenth power supply;
- a fifth transistor of a second conductivity type having a source connected to the second contact and an output terminal; a second transistor having a drain connected to the output terminal, a gate connected to the input terminal, and a source connected to the second power supply;
a delay circuit having an input end connected to the second contact and an output end connected to the third contact; one terminal connected to the second contact and the other terminal connected to the third contact; and a capacitance connected to the capacitor.

(実施例) 次に、本発明の実施例について図面を用いて説明する。(Example) Next, embodiments of the present invention will be described using the drawings.

第1図は本発明の一実施例の回路図である。FIG. 1 is a circuit diagram of an embodiment of the present invention.

この実施例は、ドレインを第10接点lに、ゲートを入
力端子INにソースを第10電源VCCに接続し2pチ
ヤンネルの第1トランジスタQ3と、ドレインを第10
接点lにゲートを入力端子INにソースを第2の電源G
NDに接続したNチャ/ネルの第2トランジスタQ4と
、ドレインを第10電源VCCにゲートを第10接点l
に、ソースを第2の接点2に接続し7tNチヤ7ネルの
第3トランジスタQsと、ドレインを第2の接点2にゲ
ートを入力端子INにソースを第2の電源GNDに接続
され7’tNチヤンネルの第4トランジスタQ6と、ド
レインを第10電源vccsゲートを第2の接点2にソ
ースを出力端子OUTに接続し7tNチヤ/ネルの第5
トランジスタQ7と、ドレインを出力端子OUTにゲー
トを入力端子INにソースを第2の電源GNDに接続し
たNチャンネルの第6トランジスタQ8と、入力端が第
2の接点2に出力端が第3の接点3に接続された遅延回
路4と、一方の端子を第2の接点2に他方の端子を第3
の接点3に接続し比静電容量とを含んで構成さnる。
In this embodiment, the drain is connected to the tenth contact l, the gate is connected to the input terminal IN, the source is connected to the tenth power supply VCC, and the first transistor Q3 is a 2p channel.
Connect the gate to the contact l and the source to the input terminal IN to the second power supply G.
A second N-channel transistor Q4 connected to ND, a drain connected to the 10th power supply VCC, and a gate connected to the 10th contact l.
, a third transistor Qs of 7tN channel with its source connected to the second contact 2, its drain connected to the second contact 2, its gate connected to the input terminal IN, and its source connected to the second power supply GND, 7'tN. The fourth transistor Q6 of the channel, the drain connected to the 10th power supply vccs, the gate connected to the second contact 2, and the source connected to the output terminal OUT, and the fifth transistor Q6 of the 7tN channel/channel.
A transistor Q7, a sixth N-channel transistor Q8 whose drain is connected to the output terminal OUT, whose gate is connected to the input terminal IN, and whose source is connected to the second power supply GND, whose input terminal is connected to the second contact 2 and whose output terminal is connected to the third A delay circuit 4 is connected to the contact 3, one terminal is connected to the second contact 2, and the other terminal is connected to the third contact.
and a specific capacitance.

第2図は第1図に示す遅延回路の詳細回路図である。こ
の回路はPチャンネルトランジスタQ・。
FIG. 2 is a detailed circuit diagram of the delay circuit shown in FIG. 1. This circuit uses a P-channel transistor Q.

Q 11 、 Nチャ/ネルトランジスタQxo、Qu
  とを用い7′?、2段のインバータで構成されてい
る。インバータは2段に限定されず、偶数段であれば良
い。偶数段のインバータを用いると遅延回路が簡単にで
きるという利点がある。
Q 11 , N-channel/channel transistor Qxo, Qu
7′? , consists of two stages of inverters. The number of inverters is not limited to two stages, but may be an even number of stages. Using an even number of stages of inverters has the advantage that the delay circuit can be easily constructed.

次ニ、この実施例の動作について説明する。Next, the operation of this embodiment will be explained.

第3図は第1図に示す実施例の動作波形図である。FIG. 3 is an operational waveform diagram of the embodiment shown in FIG. 1.

時刻t1で入力端子INがハイレベルからロウレベルに
変化するとトランジスタQsがオンし第10接点1がハ
イレベルになシさらに第3.第4のトランジスタQs 
、Qyがオンし第2の接点2゜出力端子OUTがハイレ
ベルになる。ただし、第2の接点2のハイレベルはV 
CCニー vT Hs  出力端子OUTのハイレベル
はvcc−2VTRである。
When the input terminal IN changes from a high level to a low level at time t1, the transistor Qs is turned on and the tenth contact 1 goes to a high level, and the third contact 1 changes from a high level to a low level. Fourth transistor Qs
, Qy are turned on, and the second contact 2° output terminal OUT becomes high level. However, the high level of the second contact 2 is V
CC knee vT Hs The high level of the output terminal OUT is vcc-2VTR.

VTRはトランジスタのしきい値電圧を表わす。VTR represents the threshold voltage of a transistor.

この間に静電容量Cは充電される。次に、時刻t2で遅
延回路4の出力端(接点3)がハイレベルになると、静
電容量Cのカツプリングで第2の接点2のハイレベルが
(VCC+VTR)以上に持上が9、出力端子OUTの
ハイレベルはVCCになる。時刻t3で入力端子INが
ロウレベルからハイレベルに変化するとトランジスタQ
4.Q6.QBがオンし、接点l、第2の接点2.出力
端子OUTがロウレベルにリセットされる。
During this time, the capacitance C is charged. Next, when the output terminal (contact 3) of the delay circuit 4 becomes high level at time t2, the high level of the second contact 2 rises above (VCC+VTR) due to the coupling of the capacitance C, and the output terminal The high level of OUT becomes VCC. When the input terminal IN changes from low level to high level at time t3, transistor Q
4. Q6. QB turns on, contact 1, second contact 2. The output terminal OUT is reset to low level.

上記実施例は、第1導電型をP型、第2導電型をN型と
して説明したが、第1導電型をN型、第2導電型をP型
としても本発明を適用できることはもちろんである。
In the above embodiment, the first conductivity type is P type and the second conductivity type is N type, but it goes without saying that the present invention can also be applied to the case where the first conductivity type is N type and the second conductivity type is P type. be.

(発明の効果) 以上説明したように、本発明によれば、出力段を第2導
電型のトランジスタで構成しているので、出力に異常な
ノイズが加わってもラッチアップが起らず、かつ出力端
子でのハイレベルがVCCレベルになる出力回路が得ら
れる。
(Effects of the Invention) As explained above, according to the present invention, since the output stage is composed of transistors of the second conductivity type, latch-up does not occur even if abnormal noise is added to the output. An output circuit is obtained in which the high level at the output terminal becomes the VCC level.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の回路図、第2図は第1図に
示す遅延回路の詳細回路図、第3図は第1図に示す実施
例の動作波形図、第4図は従来の出力回路の一例の回路
図、第5図は第1図に示す回路のラッチアップを説明す
るための模式図である。 1.2.3・・・・・・接点、4・・・・・・遅延回路
、11・・・・・・P型半導体基板、12°−−−−−
Nフェル、13 、14゜15・・・・・・N+拡散領
域、16,17,181°、、、p+拡散領域、19.
20・・・・・・ゲート、c・・・・・・静電容量% 
Q 1+ Q S # Q s e Q1)・・・・・
・Pチャンネルトラ/ラスタ、Qz eQa sQs 
# Qs sQr +QstQto、Q1g・・・・・
・Nチャンネルトランジスタs T 1 mT2・・・
・・・寄生NPN ト?ンジスタ%T3jT4・・・・
・・寄生PNP ト?ンジスタ。 ¥−3t
Fig. 1 is a circuit diagram of an embodiment of the present invention, Fig. 2 is a detailed circuit diagram of the delay circuit shown in Fig. 1, Fig. 3 is an operation waveform diagram of the embodiment shown in Fig. 1, and Fig. 4 is a detailed circuit diagram of the delay circuit shown in Fig. FIG. 5, a circuit diagram of an example of a conventional output circuit, is a schematic diagram for explaining latch-up of the circuit shown in FIG. 1. 1.2.3...Contact, 4...Delay circuit, 11...P-type semiconductor substrate, 12°----
Nfel, 13, 14° 15...N+ diffusion region, 16, 17, 181°, , p+ diffusion region, 19.
20...Gate, c...Capacitance%
Q 1+ Q S # Q s e Q1)...
・P channel tra/raster, Qz eQa sQs
#Qs sQr +QstQto, Q1g...
・N-channel transistor s T 1 mT2...
...parasitic NPN? %T3jT4...
... Parasitic PNP? Njista. ¥-3t

Claims (2)

【特許請求の範囲】[Claims] (1)ドレインを第1の接点にゲートを入力端子にソー
スを第1の電源に接続した第10導電型の第1のトラン
ジスタと、ドレインを前記第1の接点にゲートを入力端
子にソースを第2の電源に接続した第2導電型の第2ト
ランジスタと、ドレインを前記第1の電源にゲートを前
記第1の接点にソースを第2の接点に接続した第2導電
型の第3トランジスタと、ドレインを前記第2の接点に
ゲートを入力端子にソースを前記第2の電源に接続した
第2導電型の第4トランジスタと、ドレインを前記第1
の電源にゲートを前記第2の接点にソースを出力端子に
接続した第2導電型の第5トランジスタと、ドレインを
出力端子にゲートを入力端子にソースを前記第2の電源
に接続した第2導電型の第6トランジスタと、入力端を
前記第2の接点に出力端を第3の接点に接続した遅延回
路と、一方の端子を前記第2の接点に他方の端子を前記
第3の接点に接続した静電容量とを含むことを特徴とす
る出力回路。
(1) A first transistor of the 10th conductivity type, with the drain connected to the first contact, the gate connected to the input terminal, and the source connected to the first power supply, and the drain connected to the first contact, the gate connected to the input terminal, and the source connected to the a second transistor of a second conductivity type connected to a second power supply; and a third transistor of a second conductivity type whose drain is connected to the first power supply, whose gate is connected to the first contact, and whose source is connected to the second contact. a fourth transistor of a second conductivity type having a drain connected to the second contact, a gate connected to the input terminal, and a source connected to the second power supply;
a fifth transistor of a second conductivity type having a gate connected to the second contact and a source connected to the output terminal, and a second transistor having a drain connected to the output terminal, a gate connected to the input terminal, and a source connected to the second power source. a sixth transistor of conductivity type; a delay circuit having an input end connected to the second contact and an output end connected to the third contact; one terminal connected to the second contact and the other terminal connected to the third contact; and a capacitor connected to the output circuit.
(2)遅延回路が偶数段のインバータで構成されている
特許請求の範囲第(1)項記載の出力回路。
(2) The output circuit according to claim (1), wherein the delay circuit is constituted by an even number of stages of inverters.
JP59277438A 1984-12-28 1984-12-28 Output circuit Expired - Lifetime JPH0618322B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59277438A JPH0618322B2 (en) 1984-12-28 1984-12-28 Output circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59277438A JPH0618322B2 (en) 1984-12-28 1984-12-28 Output circuit

Publications (2)

Publication Number Publication Date
JPS61157114A true JPS61157114A (en) 1986-07-16
JPH0618322B2 JPH0618322B2 (en) 1994-03-09

Family

ID=17583563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59277438A Expired - Lifetime JPH0618322B2 (en) 1984-12-28 1984-12-28 Output circuit

Country Status (1)

Country Link
JP (1) JPH0618322B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0568363U (en) * 1991-11-07 1993-09-17 株式会社ダイシン Folding wagon

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56123127A (en) * 1980-03-04 1981-09-28 Nec Corp Logic circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56123127A (en) * 1980-03-04 1981-09-28 Nec Corp Logic circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0568363U (en) * 1991-11-07 1993-09-17 株式会社ダイシン Folding wagon

Also Published As

Publication number Publication date
JPH0618322B2 (en) 1994-03-09

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