JPS6115589B2 - - Google Patents
Info
- Publication number
- JPS6115589B2 JPS6115589B2 JP52150817A JP15081777A JPS6115589B2 JP S6115589 B2 JPS6115589 B2 JP S6115589B2 JP 52150817 A JP52150817 A JP 52150817A JP 15081777 A JP15081777 A JP 15081777A JP S6115589 B2 JPS6115589 B2 JP S6115589B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- diffusion source
- conductivity type
- impurity concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15081777A JPS5482981A (en) | 1977-12-14 | 1977-12-14 | Nanufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15081777A JPS5482981A (en) | 1977-12-14 | 1977-12-14 | Nanufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5482981A JPS5482981A (en) | 1979-07-02 |
| JPS6115589B2 true JPS6115589B2 (enExample) | 1986-04-24 |
Family
ID=15505054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15081777A Granted JPS5482981A (en) | 1977-12-14 | 1977-12-14 | Nanufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5482981A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61224448A (ja) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | 半導体装置の製造方法 |
-
1977
- 1977-12-14 JP JP15081777A patent/JPS5482981A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5482981A (en) | 1979-07-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4125426A (en) | Method of manufacturing semiconductor device | |
| JPS5928992B2 (ja) | Mosトランジスタおよびその製造方法 | |
| JPH05347383A (ja) | 集積回路の製法 | |
| US4408387A (en) | Method for producing a bipolar transistor utilizing an oxidized semiconductor masking layer in conjunction with an anti-oxidation mask | |
| JPS59119762A (ja) | 埋込シヨツトキ−クランプ型トランジスタ | |
| JPS6252963A (ja) | バイポ−ラトランジスタの製造方法 | |
| JPS588139B2 (ja) | 半導体装置の製造方法 | |
| JPS6220711B2 (enExample) | ||
| JPS6231507B2 (enExample) | ||
| JPS5933271B2 (ja) | 半導体装置の製造方法 | |
| JPH0366815B2 (enExample) | ||
| JPS6143858B2 (enExample) | ||
| JP2822382B2 (ja) | 半導体装置及びその製造方法 | |
| JPH0579186B2 (enExample) | ||
| JP2745946B2 (ja) | 半導体集積回路の製造方法 | |
| JP2594697B2 (ja) | 半導体装置の製造方法 | |
| JPH0155585B2 (enExample) | ||
| JPS6120141B2 (enExample) | ||
| JPS6129539B2 (enExample) | ||
| JPS61251165A (ja) | Bi−MIS集積回路の製造方法 | |
| JPH0656835B2 (ja) | 半導体への不純物拡散方法 | |
| JPS6188543A (ja) | 半導体装置の製造方法 | |
| JPH0478009B2 (enExample) | ||
| JPS592191B2 (ja) | 半導体装置用電極の製造方法 | |
| JPS6239538B2 (enExample) |