JPS6115520B2 - - Google Patents
Info
- Publication number
- JPS6115520B2 JPS6115520B2 JP13969478A JP13969478A JPS6115520B2 JP S6115520 B2 JPS6115520 B2 JP S6115520B2 JP 13969478 A JP13969478 A JP 13969478A JP 13969478 A JP13969478 A JP 13969478A JP S6115520 B2 JPS6115520 B2 JP S6115520B2
- Authority
- JP
- Japan
- Prior art keywords
- diode
- select line
- line
- diodes
- address
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010586 diagram Methods 0.000 description 5
- 238000010276 construction Methods 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/08—Address circuits; Decoders; Word-line control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13969478A JPS5567997A (en) | 1978-11-13 | 1978-11-13 | Ternary programmable read-only memory circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13969478A JPS5567997A (en) | 1978-11-13 | 1978-11-13 | Ternary programmable read-only memory circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5567997A JPS5567997A (en) | 1980-05-22 |
JPS6115520B2 true JPS6115520B2 (enrdf_load_stackoverflow) | 1986-04-24 |
Family
ID=15251232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13969478A Granted JPS5567997A (en) | 1978-11-13 | 1978-11-13 | Ternary programmable read-only memory circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5567997A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62267619A (ja) * | 1986-05-15 | 1987-11-20 | Kanbayashi Seisakusho:Kk | 流量測定装置 |
JPH01107112A (ja) * | 1987-10-20 | 1989-04-25 | Aichi Tokei Denki Co Ltd | 水道メータ |
JPH02133614U (enrdf_load_stackoverflow) * | 1989-04-12 | 1990-11-06 | ||
JPH0341316A (ja) * | 1989-07-07 | 1991-02-21 | Tokico Ltd | タービン式流量計 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4441167A (en) * | 1981-12-03 | 1984-04-03 | Raytheon Company | Reprogrammable read only memory |
JPH02260298A (ja) * | 1989-03-31 | 1990-10-23 | Oki Electric Ind Co Ltd | 不揮発性多値メモリ装置 |
-
1978
- 1978-11-13 JP JP13969478A patent/JPS5567997A/ja active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62267619A (ja) * | 1986-05-15 | 1987-11-20 | Kanbayashi Seisakusho:Kk | 流量測定装置 |
JPH01107112A (ja) * | 1987-10-20 | 1989-04-25 | Aichi Tokei Denki Co Ltd | 水道メータ |
JPH02133614U (enrdf_load_stackoverflow) * | 1989-04-12 | 1990-11-06 | ||
JPH0341316A (ja) * | 1989-07-07 | 1991-02-21 | Tokico Ltd | タービン式流量計 |
Also Published As
Publication number | Publication date |
---|---|
JPS5567997A (en) | 1980-05-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4125877A (en) | Dual port random access memory storage cell | |
KR940018974A (ko) | 반도체기억장치(semiconductor memory device) | |
JPS583193A (ja) | 電気的にプログラム可能な読取り専用メモリ | |
US4103823A (en) | Parity checking scheme for detecting word line failure in multiple byte arrays | |
TWI246689B (en) | Method to prevent the electron-migration in a MRAM | |
JPS6115520B2 (enrdf_load_stackoverflow) | ||
US5063539A (en) | Ferroelectric memory with diode isolation | |
KR910014938A (ko) | 향상된 di/dt 제어가 가능한 집적회로 메모리 | |
JPS6010364A (ja) | デイレクトリ・メモリ・システム | |
JP4152263B2 (ja) | データストレージメモリの複数のアレイのためのアドレス構造及び方法 | |
US6687168B2 (en) | Method for writing data bits to a memory array | |
US3441912A (en) | Feedback current switch memory cell | |
EP0037734B1 (en) | Semiconductor memory chip, and a memory device including such chips | |
JPS6117077B2 (enrdf_load_stackoverflow) | ||
JPS5951021B2 (ja) | 論理演算装置 | |
JPS61144791A (ja) | ランダム・アクセス・メモリ | |
KR100278283B1 (ko) | 컨텐트 어드레서블 메모리 디바이스 | |
JPS6089895A (ja) | 半導体記憶装置 | |
US3461437A (en) | Digital memory in which the driving of each word location is controlled by a switch core | |
JPS6079597A (ja) | 半導体メモリ装置 | |
JPH09232450A (ja) | 半導体装置 | |
JPS6266497A (ja) | プログラマブルリ−ドオンリメモリ | |
JPS63255900A (ja) | 書込み可能な読出し専用メモリの書込方法 | |
JPS61129794A (ja) | 磁気バブルデバイス | |
JPS61206998A (ja) | 半導体記憶回路 |