JPS61150272A - 炭化珪素半導体素子の製造方法 - Google Patents

炭化珪素半導体素子の製造方法

Info

Publication number
JPS61150272A
JPS61150272A JP59275670A JP27567084A JPS61150272A JP S61150272 A JPS61150272 A JP S61150272A JP 59275670 A JP59275670 A JP 59275670A JP 27567084 A JP27567084 A JP 27567084A JP S61150272 A JPS61150272 A JP S61150272A
Authority
JP
Japan
Prior art keywords
silicon carbide
gas
carbide semiconductor
etching
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59275670A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476205B2 (enrdf_load_stackoverflow
Inventor
Akira Suzuki
彰 鈴木
Masaki Furukawa
勝紀 古川
Mitsuhiro Shigeta
光浩 繁田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59275670A priority Critical patent/JPS61150272A/ja
Publication of JPS61150272A publication Critical patent/JPS61150272A/ja
Publication of JPH0476205B2 publication Critical patent/JPH0476205B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP59275670A 1984-12-24 1984-12-24 炭化珪素半導体素子の製造方法 Granted JPS61150272A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59275670A JPS61150272A (ja) 1984-12-24 1984-12-24 炭化珪素半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59275670A JPS61150272A (ja) 1984-12-24 1984-12-24 炭化珪素半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS61150272A true JPS61150272A (ja) 1986-07-08
JPH0476205B2 JPH0476205B2 (enrdf_load_stackoverflow) 1992-12-03

Family

ID=17558709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59275670A Granted JPS61150272A (ja) 1984-12-24 1984-12-24 炭化珪素半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS61150272A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347984A (ja) * 1986-08-18 1988-02-29 Fujitsu Ltd 半導体装置
DE19954866A1 (de) * 1999-11-15 2001-05-31 Infineon Technologies Ag Verfahren zur Behandlung einer durch Epitaxie hergestellten Oberfläche eines SiC-Halbleiterkörpers und danach hergestellten Schottkykontakt
JP2010283403A (ja) * 2010-09-27 2010-12-16 Sumitomo Electric Ind Ltd 整流素子およびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124438A (en) * 1981-01-26 1982-08-03 Rikagaku Kenkyusho Ion beam etching for silicon carbide

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124438A (en) * 1981-01-26 1982-08-03 Rikagaku Kenkyusho Ion beam etching for silicon carbide

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347984A (ja) * 1986-08-18 1988-02-29 Fujitsu Ltd 半導体装置
DE19954866A1 (de) * 1999-11-15 2001-05-31 Infineon Technologies Ag Verfahren zur Behandlung einer durch Epitaxie hergestellten Oberfläche eines SiC-Halbleiterkörpers und danach hergestellten Schottkykontakt
US6905916B2 (en) 1999-11-15 2005-06-14 Infineon Technologies Ag Method for processing a surface of an SiC semiconductor layer and Schottky contact
JP2010283403A (ja) * 2010-09-27 2010-12-16 Sumitomo Electric Ind Ltd 整流素子およびその製造方法

Also Published As

Publication number Publication date
JPH0476205B2 (enrdf_load_stackoverflow) 1992-12-03

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