JPH0476205B2 - - Google Patents

Info

Publication number
JPH0476205B2
JPH0476205B2 JP59275670A JP27567084A JPH0476205B2 JP H0476205 B2 JPH0476205 B2 JP H0476205B2 JP 59275670 A JP59275670 A JP 59275670A JP 27567084 A JP27567084 A JP 27567084A JP H0476205 B2 JPH0476205 B2 JP H0476205B2
Authority
JP
Japan
Prior art keywords
silicon carbide
gas
carbide semiconductor
etching
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59275670A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61150272A (ja
Inventor
Akira Suzuki
Masaki Furukawa
Mitsuhiro Shigeta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59275670A priority Critical patent/JPS61150272A/ja
Publication of JPS61150272A publication Critical patent/JPS61150272A/ja
Publication of JPH0476205B2 publication Critical patent/JPH0476205B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP59275670A 1984-12-24 1984-12-24 炭化珪素半導体素子の製造方法 Granted JPS61150272A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59275670A JPS61150272A (ja) 1984-12-24 1984-12-24 炭化珪素半導体素子の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59275670A JPS61150272A (ja) 1984-12-24 1984-12-24 炭化珪素半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPS61150272A JPS61150272A (ja) 1986-07-08
JPH0476205B2 true JPH0476205B2 (enrdf_load_stackoverflow) 1992-12-03

Family

ID=17558709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59275670A Granted JPS61150272A (ja) 1984-12-24 1984-12-24 炭化珪素半導体素子の製造方法

Country Status (1)

Country Link
JP (1) JPS61150272A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6347984A (ja) * 1986-08-18 1988-02-29 Fujitsu Ltd 半導体装置
DE19954866A1 (de) * 1999-11-15 2001-05-31 Infineon Technologies Ag Verfahren zur Behandlung einer durch Epitaxie hergestellten Oberfläche eines SiC-Halbleiterkörpers und danach hergestellten Schottkykontakt
JP2010283403A (ja) * 2010-09-27 2010-12-16 Sumitomo Electric Ind Ltd 整流素子およびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57124438A (en) * 1981-01-26 1982-08-03 Rikagaku Kenkyusho Ion beam etching for silicon carbide

Also Published As

Publication number Publication date
JPS61150272A (ja) 1986-07-08

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