JPS61147570A - ショットキバリア半導体装置 - Google Patents

ショットキバリア半導体装置

Info

Publication number
JPS61147570A
JPS61147570A JP59269855A JP26985584A JPS61147570A JP S61147570 A JPS61147570 A JP S61147570A JP 59269855 A JP59269855 A JP 59269855A JP 26985584 A JP26985584 A JP 26985584A JP S61147570 A JPS61147570 A JP S61147570A
Authority
JP
Japan
Prior art keywords
type silicon
schottky barrier
semiconductor device
silicon region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59269855A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0476218B2 (enrdf_load_stackoverflow
Inventor
Shigeto Maruo
丸尾　成人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP59269855A priority Critical patent/JPS61147570A/ja
Publication of JPS61147570A publication Critical patent/JPS61147570A/ja
Publication of JPH0476218B2 publication Critical patent/JPH0476218B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP59269855A 1984-12-20 1984-12-20 ショットキバリア半導体装置 Granted JPS61147570A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59269855A JPS61147570A (ja) 1984-12-20 1984-12-20 ショットキバリア半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59269855A JPS61147570A (ja) 1984-12-20 1984-12-20 ショットキバリア半導体装置

Publications (2)

Publication Number Publication Date
JPS61147570A true JPS61147570A (ja) 1986-07-05
JPH0476218B2 JPH0476218B2 (enrdf_load_stackoverflow) 1992-12-03

Family

ID=17478134

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59269855A Granted JPS61147570A (ja) 1984-12-20 1984-12-20 ショットキバリア半導体装置

Country Status (1)

Country Link
JP (1) JPS61147570A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148241A (en) * 1989-12-15 1992-09-15 Kabushiki Kaisha Toshiba Method of manufacturing a schottky diode device
JPH06121513A (ja) * 1992-10-06 1994-04-28 Sumitomo Metal Mining Co Ltd 磁気アクチュエータ
JP2002076371A (ja) * 2000-06-12 2002-03-15 Fuji Electric Co Ltd 半導体装置
JP2006210690A (ja) * 2005-01-28 2006-08-10 Matsushita Electric Ind Co Ltd サージ保護用半導体装置
JP2008519448A (ja) * 2004-11-08 2008-06-05 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 半導体デバイスおよび半導体デバイスの製造方法
KR20140099879A (ko) * 2011-12-01 2014-08-13 로베르트 보쉬 게엠베하 고전압-트렌치-접합-장벽-쇼트키 다이오드

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5168183A (ja) * 1974-12-10 1976-06-12 Nippon Electric Co Shotsutokiseiryusoshi
JPS5224465A (en) * 1975-08-20 1977-02-23 Sanken Electric Co Ltd Schottky barrier semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5168183A (ja) * 1974-12-10 1976-06-12 Nippon Electric Co Shotsutokiseiryusoshi
JPS5224465A (en) * 1975-08-20 1977-02-23 Sanken Electric Co Ltd Schottky barrier semiconductor device

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5148241A (en) * 1989-12-15 1992-09-15 Kabushiki Kaisha Toshiba Method of manufacturing a schottky diode device
JPH06121513A (ja) * 1992-10-06 1994-04-28 Sumitomo Metal Mining Co Ltd 磁気アクチュエータ
JP2002076371A (ja) * 2000-06-12 2002-03-15 Fuji Electric Co Ltd 半導体装置
JP2008519448A (ja) * 2004-11-08 2008-06-05 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング 半導体デバイスおよび半導体デバイスの製造方法
US8816467B2 (en) 2004-11-08 2014-08-26 Robert Bosch Gmbh Semiconductor device and method for manufacturing same
JP2006210690A (ja) * 2005-01-28 2006-08-10 Matsushita Electric Ind Co Ltd サージ保護用半導体装置
KR20140099879A (ko) * 2011-12-01 2014-08-13 로베르트 보쉬 게엠베하 고전압-트렌치-접합-장벽-쇼트키 다이오드
JP2015504610A (ja) * 2011-12-01 2015-02-12 ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツングＲｏｂｅｒｔ Ｂｏｓｃｈ Ｇｍｂｈ 高電圧トレンチ接合ショットキーバリアダイオード

Also Published As

Publication number Publication date
JPH0476218B2 (enrdf_load_stackoverflow) 1992-12-03

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Legal Events

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