JPS61142777A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS61142777A JPS61142777A JP59233450A JP23345084A JPS61142777A JP S61142777 A JPS61142777 A JP S61142777A JP 59233450 A JP59233450 A JP 59233450A JP 23345084 A JP23345084 A JP 23345084A JP S61142777 A JPS61142777 A JP S61142777A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- region
- junction
- type semiconductor
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 3
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 239000000969 carrier Substances 0.000 claims description 6
- 230000007704 transition Effects 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000010355 oscillation Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59233450A JPS61142777A (ja) | 1984-11-06 | 1984-11-06 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59233450A JPS61142777A (ja) | 1984-11-06 | 1984-11-06 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61142777A true JPS61142777A (ja) | 1986-06-30 |
| JPH0560270B2 JPH0560270B2 (https=) | 1993-09-01 |
Family
ID=16955230
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59233450A Granted JPS61142777A (ja) | 1984-11-06 | 1984-11-06 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61142777A (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229636A (en) * | 1987-09-01 | 1993-07-20 | Tatsuji Masuda | Negative effective mass semiconductor device and circuit |
| WO1999003204A1 (en) * | 1997-07-08 | 1999-01-21 | Tatsuji Masuda | Sr flip flop |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4834467A (https=) * | 1971-09-07 | 1973-05-18 |
-
1984
- 1984-11-06 JP JP59233450A patent/JPS61142777A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4834467A (https=) * | 1971-09-07 | 1973-05-18 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5229636A (en) * | 1987-09-01 | 1993-07-20 | Tatsuji Masuda | Negative effective mass semiconductor device and circuit |
| WO1999003204A1 (en) * | 1997-07-08 | 1999-01-21 | Tatsuji Masuda | Sr flip flop |
| US6239638B1 (en) | 1997-07-08 | 2001-05-29 | Tatsuji Masuda | SR flip flop |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0560270B2 (https=) | 1993-09-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |