JPS6114183Y2 - - Google Patents
Info
- Publication number
- JPS6114183Y2 JPS6114183Y2 JP1981025689U JP2568981U JPS6114183Y2 JP S6114183 Y2 JPS6114183 Y2 JP S6114183Y2 JP 1981025689 U JP1981025689 U JP 1981025689U JP 2568981 U JP2568981 U JP 2568981U JP S6114183 Y2 JPS6114183 Y2 JP S6114183Y2
- Authority
- JP
- Japan
- Prior art keywords
- matching circuit
- semiconductor element
- ultra
- impedance
- high frequency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10W72/5445—
-
- H10W90/754—
Landscapes
- Microwave Amplifiers (AREA)
- Amplifiers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981025689U JPS6114183Y2 (enExample) | 1981-02-25 | 1981-02-25 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981025689U JPS6114183Y2 (enExample) | 1981-02-25 | 1981-02-25 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57138422U JPS57138422U (enExample) | 1982-08-30 |
| JPS6114183Y2 true JPS6114183Y2 (enExample) | 1986-05-02 |
Family
ID=29823384
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1981025689U Expired JPS6114183Y2 (enExample) | 1981-02-25 | 1981-02-25 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6114183Y2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010161348A (ja) * | 2008-12-10 | 2010-07-22 | Toshiba Corp | 高周波半導体装置 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07120906B2 (ja) * | 1989-10-05 | 1995-12-20 | 日本電気株式会社 | マイクロ波ミリ波高出力トランジスタ |
| JP2012156362A (ja) | 2011-01-27 | 2012-08-16 | Fujitsu Ltd | 伝送線路、集積回路搭載装置および通信機モジュール |
| JP5259807B2 (ja) * | 2011-11-21 | 2013-08-07 | 株式会社東芝 | 半導体装置 |
| JP6565130B2 (ja) * | 2013-10-31 | 2019-08-28 | 三菱電機株式会社 | 増幅器 |
| JP6354803B2 (ja) * | 2016-07-25 | 2018-07-11 | 富士通株式会社 | 集積回路搭載装置および通信機モジュール |
-
1981
- 1981-02-25 JP JP1981025689U patent/JPS6114183Y2/ja not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010161348A (ja) * | 2008-12-10 | 2010-07-22 | Toshiba Corp | 高周波半導体装置 |
| JP2015015496A (ja) * | 2008-12-10 | 2015-01-22 | 株式会社東芝 | 高周波半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57138422U (enExample) | 1982-08-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3888785B2 (ja) | 高周波電力増幅器 | |
| CN111355455B (zh) | 功率晶体管和具有谐波终端电路的放大器以及制造方法 | |
| US10587226B2 (en) | Amplifier device with harmonic termination circuit | |
| US4107728A (en) | Package for push-pull semiconductor devices | |
| US4193083A (en) | Package for push-pull semiconductor devices | |
| US5233313A (en) | High power field effect transistor amplifier | |
| EP0015709B1 (en) | Constructional arrangement for semiconductor devices | |
| JPH11346130A (ja) | 半導体装置 | |
| JP2003115732A (ja) | 半導体装置 | |
| US8643438B2 (en) | Class-AB power amplifier | |
| JPS6114183Y2 (enExample) | ||
| JPH065794A (ja) | 高周波増幅装置 | |
| JPS6114182Y2 (enExample) | ||
| US8653896B2 (en) | Class-AB power amplifier | |
| JP3004882B2 (ja) | スパイラルインダクタ、マイクロ波増幅回路およびマイクロ波増幅装置 | |
| JPS6114181Y2 (enExample) | ||
| JP6289678B1 (ja) | 高周波増幅器 | |
| CN106253873A (zh) | 一种薄膜体声波谐振器谐波调谐放大模块 | |
| JPS6364081B2 (enExample) | ||
| JPS5868954A (ja) | 高周波トランジスタのパツケ−ジ | |
| JPS6365242B2 (enExample) | ||
| JPS6032749Y2 (ja) | チップ形静電容量素子 | |
| US12401325B2 (en) | Doherty amplifier | |
| JPS6036882Y2 (ja) | 超高周波半導体装置用インピ−ダンス整合回路 | |
| JPH02119174A (ja) | 集積化高周波増幅器 |