JPS61139079A - Semiconductor light-emitting display device - Google Patents
Semiconductor light-emitting display deviceInfo
- Publication number
- JPS61139079A JPS61139079A JP59261072A JP26107284A JPS61139079A JP S61139079 A JPS61139079 A JP S61139079A JP 59261072 A JP59261072 A JP 59261072A JP 26107284 A JP26107284 A JP 26107284A JP S61139079 A JPS61139079 A JP S61139079A
- Authority
- JP
- Japan
- Prior art keywords
- leads
- light emitting
- resin base
- display device
- emitting display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は、半導体発光表示装置に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a semiconductor light emitting display device.
従来、第２＠（４）、Φ）に示すような構造の半導体発
光表示装置が使用されている。図中１は、樹脂封止体で
ある。樹脂封止体１内には、３本のリード２．３．４が
その一端部を外部に導出するようにして封止されている
。隣接するリード２，３の他端面には、発光素子５，６
を装着する凹部７＆、７ｂが相対向して形成されている
。凹部７ａ、７ｂの対向する壁部は切欠されている。ま
た、一方の凹部７ｂの突出部には、他方の凹部７＆に装
着された発光素子５と電気的に接続するためのデンディ
ング線８が、第３図■に示す如く、接続されている。一
方の凹部７ｂに装着された発光素子６は、ボンディング
線９を介して残る他のり−ド４に接続されている。この
ように構成された半導体発光表示装置１０は、リード２
，３の端面にプレス加工等にて形成した凹部７ｍ、７ｂ
に発光素子５，６を装着し、発光素子５，６からの射出
光１１ｔ−第３図（Ｂ）に示す如く、上方に集めるよう
になっている。しかしながら、リード２，３．４の成形
は、一枚の金属板にプレス加工或はエツチング処理を施
して多数本のリード素材を略櫛状に連ねたものを作るこ
とによシ行う。而して、リ−ド素材の端面の凹部７ｍ、
７ｂに発光素子５゜６等を装着してから、１これに樹脂
封止処理を施し、各々の樹脂封止体１ごとにリード２，
３゜４を切断して半導体発光表示装置１０を得る。Conventionally, a semiconductor light emitting display device having a structure as shown in No. 2 (4), Φ) has been used. In the figure, 1 is a resin molded body. Three leads 2, 3, and 4 are sealed within the resin sealing body 1 with one end thereof extending outside. On the other end surfaces of the adjacent leads 2 and 3, light emitting elements 5 and 6 are provided.
Recesses 7&, 7b are formed to face each other. The opposing walls of the recesses 7a and 7b are cut out. Furthermore, a extending wire 8 for electrically connecting to the light emitting element 5 mounted in the other recess 7& is connected to the protruding part of one recess 7b, as shown in FIG. 3 (2). The light emitting element 6 mounted in one of the recesses 7b is connected to the remaining board 4 via a bonding wire 9. The semiconductor light emitting display device 10 configured in this manner has the leads 2
, 3, recesses 7m and 7b formed by press working etc.
The light emitting elements 5 and 6 are attached to the light emitting elements 5 and 6, and the emitted light 11t from the light emitting elements 5 and 6 is collected upward as shown in FIG. 3(B). However, the leads 2, 3, and 4 are formed by pressing or etching a single metal plate to form a substantially comb-like arrangement of a large number of lead materials. Therefore, the recessed portion 7m on the end face of the lead material,
After attaching the light emitting element 5゜6 etc. to 7b, it is subjected to resin sealing treatment, and leads 2,
The semiconductor light emitting display device 10 is obtained by cutting 3°4.
このような組立て工程を経るため、リード２゜３．４相
互の間隔ｔは、加工上に必要な最低限度の間隔以上にす
る必要がある。しかも、リード２，３．４自体の大きさ
は、発光素子５，６及びデンディング線８，９を確実に
固定できるものにする必要がある。その結果、半導体発
光表示装置１０を十分に小形にできない問題があった。In order to go through such an assembly process, the distance t between the leads 2.degree. 3.4 must be greater than the minimum distance required for processing. Furthermore, the leads 2, 3.4 themselves need to be large enough to securely fix the light emitting elements 5, 6 and the extending wires 8, 9. As a result, there is a problem that the semiconductor light emitting display device 10 cannot be made sufficiently compact.
この問題を解消するために、第４図（４）に示す如く、
凹部７ｍ 、７ｂを形成せずにリード２′。In order to solve this problem, as shown in Figure 4 (4),
Lead 2' without forming recesses 7m and 7b.
３／ 、 ４／の一端部を略り字形に折曲した構造のも
のが使用されて〜Ａる。しかしながら、このようなリー
ド２／ 、 ３／ 、 ４／を採用した半導体発光表示
装置では、発光素子４，５からの射出光１２を十分に集
めることができず、輝度が低下する問題があった。A structure in which one end of 3/ and 4/ is bent into an abbreviated shape is used. However, in semiconductor light emitting display devices employing such leads 2/, 3/, and 4/, there was a problem in that the emitted light 12 from the light emitting elements 4 and 5 could not be sufficiently collected, resulting in a decrease in brightness. .
本発明は、小形でしかも発光輝度の高い半導体発光表示
装置を提供することをその目的とするものである。An object of the present invention is to provide a semiconductor light emitting display device which is small in size and has high luminance.
本発明は、初めから独立した三本のリードを採用し、こ
れらのリードを相互の間隔が可能な限シ小さくなると共
に、リードの先端面が樹脂基台の表面とほぼ同一表面を
なすようにして、樹脂基台に挿着固定したことによシ、
小形でしかも発光輝度の高い半導体発光表示装置でおる
。The present invention employs three independent leads from the beginning, and the distance between these leads is made as small as possible, and the tip surfaces of the leads are made almost flush with the surface of the resin base. By inserting and fixing it into the resin base,
It is a small semiconductor light emitting display device with high luminance.
以下、本発明の実施例について図面を参照して説明する
。第１図（４）は、本発明の一実施例の斜視図、同図（
Ｂ）は同実施例の平面図、同図（０を家、同実施例の断
面図である。図中２０は、略円板形の樹脂基台である。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1(4) is a perspective view of one embodiment of the present invention, and FIG.
B) is a plan view of the same embodiment, and the same figure (0 is a house) is a sectional view of the same embodiment. In the figure, 20 is a substantially disk-shaped resin base.
樹脂基台２０に（ｉ、３本の導体からなるリード２１．
２２．２３がその一端面と樹脂基台２０の表面とがほぼ
同一表面をなすと共に、夫々のリード２１，２２．２３
の間隔が可能な限シ小さくなるようにして挿着固定され
ている。２本の隣接するリード２１゜２２の端面には、
発光素子２４．２５が夫々装着されている。一方の発光
素子２４と他方の発光素子２５のリード２２の端面間に
は、？ンディング線２６が架設されている。他の発光素
子２５と残るリード２３の端面間には、ビンディング線
２７が架設されている。発光素子２４゜２５及びデンデ
ィング１１Ａ２６＃２７は、樹脂基台２０上に被着され
たほぼ透明の樹脂からなる略半球状の樹脂封止体２８で
一体に封止されている。On the resin base 20 (i, a lead 21 consisting of three conductors.
22.23, one end surface thereof and the surface of the resin base 20 are substantially the same surface, and the respective leads 21, 22.23
They are inserted and fixed in such a way that the distance between them is as small as possible. On the end faces of two adjacent leads 21° and 22,
Light emitting elements 24 and 25 are mounted respectively. Between the end faces of the leads 22 of one light emitting element 24 and the other light emitting element 25? A landing line 26 is installed. A binding line 27 is installed between the other light emitting element 25 and the end face of the remaining lead 23. The light emitting elements 24, 25 and the dens 11A26#27 are integrally sealed with a substantially hemispherical resin encapsulant 28 made of a substantially transparent resin and adhered onto the resin base 20.
このように構成された半導体発光表示装置」によれば、
樹脂基台２００表面を利用して発光素子２４．２５から
の射出光３１を反射させ、上方に効果的に集めることが
できる。その結果、輝度を高めることができる。困みに
、第４図に示した従来のリード構造を有する半導体発光
表示装置の輝度を１とすると、実施例の半導体発光表示
装置だでは、約１．８倍に輝度を高めることができる。According to the semiconductor light emitting display device configured in this way,
Using the surface of the resin base 200, the emitted light 31 from the light emitting elements 24, 25 can be reflected and effectively collected upward. As a result, brightness can be increased. However, if the luminance of the semiconductor light emitting display device having the conventional lead structure shown in FIG. 4 is set to 1, the luminance of the semiconductor light emitting display device of the embodiment can be increased approximately 1.8 times.
また、各々のリード２〕。Also, each lead 2].
２２．２３は、樹脂基台２０に夫々独立して挿入、固定
したものであるため、相互のリード間隔を十分に小さく
することができる。その結果、半導体発光表示装置３０
を小形にすることができる。困みに、樹脂基台２０の径
Ｌｓｔ−例えば２．５〜３．５■、樹脂基台２０の下面
から樹脂封止体２８の頂部までの長さＬ８を４〜６ ｍ
、樹脂封止体２８の曲面部の半径Ｒ８を１．３〜１．
８−に設定して実施例の半導体発光表示装置３０を作成
し、小形化を達成できる。一方、第２図（４）、０３）
Ｋ示した従来の半導体発光表示装置１０では、実施例の
ものに対応する各部の寸法は、樹脂封止体１の幅ｔ工（
樹脂基台２０の径Ｌ！に相当）が４．５〜５．５ ｗｍ
、樹脂封止体１の高さｔｘ （樹脂基台２８の下面か
ら樹脂封止体２８の頂部までの長さり、に相当）が８．
５〜１０■、樹脂封止体１の曲面の半径Ｒ２が２．１〜
２．８ ｗｍと大形になることが判った。Since the leads 22 and 23 are each inserted and fixed independently into the resin base 20, the distance between the leads can be made sufficiently small. As a result, the semiconductor light emitting display device 30
can be made small. Unfortunately, the diameter Lst of the resin base 20 is, for example, 2.5 to 3.5 mm, and the length L8 from the bottom surface of the resin base 20 to the top of the resin sealing body 28 is 4 to 6 m.
, the radius R8 of the curved surface portion of the resin sealing body 28 is set to 1.3 to 1.
8-, the semiconductor light emitting display device 30 of the embodiment can be manufactured, and miniaturization can be achieved. On the other hand, Fig. 2 (4), 03)
In the conventional semiconductor light emitting display device 10 shown in K, the dimensions of each part corresponding to those of the embodiment are as follows:
Diameter L of resin base 20! ) is 4.5 to 5.5 wm
, the height tx of the resin molding body 1 (corresponding to the length from the bottom surface of the resin base 28 to the top of the resin molding body 28) is 8.
5~10■, the radius R2 of the curved surface of the resin sealing body 1 is 2.1~
It turned out to be large, 2.8 wm.
以上説明した如く、本発明に係る半導体発光表示装置に
よれば、小形にすると共に発光輝度を高めることができ
るものである。As described above, according to the semiconductor light emitting display device according to the present invention, it is possible to reduce the size and increase the luminance of light emission.
第１図（４）は、本発明の一実施例の斜視図、同図（Ｂ
）は、同実施例の平面図、同図（Ｑは同実施例の断面図
、第２図囚は、従来の半導体発光表示装置の平面図、同
図（Ｂ）は、同半導体発光表示装置の横から見た断面図
、第３図（４）は、同従来の半導体発光表示装置の要部
の斜視図、同図ＣＢ）は、同半導体発光表示装置の要部
の断面図、第４図囚は、従来の他の半導体発光表示装置
の要部の斜視図、同図（Ｂ）は、同従来の他の半導体発
光表示装置の要部の正面図である。
２０・・・樹脂基台、２１，２２．２３・・・リード、
２４．２５・・・発光素子、２６．２７・・・ボンディ
ング線、２８・・・樹脂封止体、３０・・・半導体発光
表示装置。
第１図
第２図
第３図
（Ａ）FIG. 1 (4) is a perspective view of one embodiment of the present invention, and FIG.
) is a plan view of the same embodiment, the same figure (Q is a sectional view of the same embodiment, FIG. FIG. 3(4) is a sectional view of the main parts of the conventional semiconductor light emitting display device, and FIG. The figure is a perspective view of a main part of another conventional semiconductor light emitting display device, and FIG. 2B is a front view of a main part of another conventional semiconductor light emitting display device. 20... Resin base, 21, 22.23... Lead,
24.25... Light emitting element, 26.27... Bonding line, 28... Resin sealing body, 30... Semiconductor light emitting display device. Figure 1 Figure 2 Figure 3 (A)
Claims (1)
台の表面とほぼ同一表面をなすようにし、かつ、相互の
間隔を所定値に保持して挿着すると共に、所定の前記一
端面上に発光素子を装着し、該発光素子と他の前記一端
面間にボンディング線を架設し、該ボンディング線、前
記発光素子を封止する樹脂封止体を前記樹脂基台上に形
成してなることを特徴とする半導体発光表示装置。Three or more leads are inserted into a resin base so that one end surface thereof is almost flush with the surface of the resin base, and the mutual spacing is maintained at a predetermined value, and A light emitting element is mounted on the end surface, a bonding wire is installed between the light emitting element and the other end surface, and a resin sealing body for sealing the bonding wire and the light emitting element is formed on the resin base. A semiconductor light emitting display device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59261072A JPS61139079A (en) | 1984-12-11 | 1984-12-11 | Semiconductor light-emitting display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59261072A JPS61139079A (en) | 1984-12-11 | 1984-12-11 | Semiconductor light-emitting display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61139079A true JPS61139079A (en) | 1986-06-26 |
Family
ID=17356684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59261072A Pending JPS61139079A (en) | 1984-12-11 | 1984-12-11 | Semiconductor light-emitting display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61139079A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5218233A (en) * | 1990-07-24 | 1993-06-08 | Kabushiki Kaisha Toshiba | Led lamp having particular lead arrangement |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587366B2 (en) * | 1973-12-11 | 1983-02-09 | ゼネラル エレクトリツク カンパニイ | Stritupuo Reiki Yakusuru Hohou |
| JPS5846444U (en) * | 1981-09-22 | 1983-03-29 | 三洋電機株式会社 | semiconductor equipment |
-
1984
- 1984-12-11 JP JP59261072A patent/JPS61139079A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS587366B2 (en) * | 1973-12-11 | 1983-02-09 | ゼネラル エレクトリツク カンパニイ | Stritupuo Reiki Yakusuru Hohou |
| JPS5846444U (en) * | 1981-09-22 | 1983-03-29 | 三洋電機株式会社 | semiconductor equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5218233A (en) * | 1990-07-24 | 1993-06-08 | Kabushiki Kaisha Toshiba | Led lamp having particular lead arrangement |
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