JP3302203B2 - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JP3302203B2 JP3302203B2 JP28256594A JP28256594A JP3302203B2 JP 3302203 B2 JP3302203 B2 JP 3302203B2 JP 28256594 A JP28256594 A JP 28256594A JP 28256594 A JP28256594 A JP 28256594A JP 3302203 B2 JP3302203 B2 JP 3302203B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating substrate
- led
- emitting diode
- electrodes
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
Description
【０００１】[0001]
【産業上の利用分野】本発明は、チップ型の発光ダイオ
ード（以下「ＬＥＤ」と略称する）に関するものであ
り、特に軽薄短小を追求する電子機器向けに提供される
小型、薄型ＬＥＤに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chip-type light emitting diode (hereinafter abbreviated as "LED"), and more particularly to a small and thin LED provided for electronic equipment pursuing lightness, lightness and shortness.
【０００２】[0002]
【従来の技術】軽薄短小を追求する電子機器向けに提供
される小型、薄型ＬＥＤの代表的な従来構造を図３及び
図４に示す。図３のＬＥＤは、略直方体形状を成した絶
縁基板１の表面にメッキ配線による金属パターンからな
る一対の電極２、３を形成している。この電極は、絶縁
基板１の下面から側面を通り上面までコの字状を成し、
該電極２と３が対向するように形成されている。ＬＥＤ
素子４は該電極２上の上面電極部２ｂに実装され、電極
３上の上面電極部３ｂと金属細線５によりワイヤーボン
デイング接続し、透光性樹脂６にてＬＥＤ素子４と金属
細線５を覆う形で封止した構造を有している。図４のＬ
ＥＤは、細長い板状の一対の金属電極７、８を所定の間
隔をあけて配置し、該金属電極７の上面側部７ｂにＬＥ
Ｄ素子４を実装し、該金属電極８の上面側部８ｂと金属
細線５によりワイヤーボンディング接続し、透光性樹脂
６にて該金属電極７、８の一部とＬＥＤ素子４と金属細
線５を含む周囲全体を封止した構造を有している。2. Description of the Related Art FIGS. 3 and 4 show typical conventional structures of small and thin LEDs provided for electronic devices pursuing lightness, small size and small size. The LED shown in FIG. 3 has a pair of electrodes 2 and 3 formed of a metal pattern formed by plating wiring on the surface of an insulating substrate 1 having a substantially rectangular parallelepiped shape. This electrode forms a U-shape from the lower surface of the insulating substrate 1 through the side surface to the upper surface,
The electrodes 2 and 3 are formed so as to face each other. LED
The element 4 is mounted on the upper electrode portion 2b on the electrode 2, is connected to the upper electrode portion 3b on the electrode 3 by wire bonding with the thin metal wire 5, and covers the LED element 4 and the thin metal wire 5 with the translucent resin 6. It has a sealed structure. L in FIG.
In the ED, a pair of elongated plate-shaped metal electrodes 7 and 8 are arranged at predetermined intervals, and LE
The D element 4 is mounted, and the upper surface side portion 8b of the metal electrode 8 is wire-bonded to the thin metal wire 5 by wire bonding. Has a structure in which the entire periphery including is sealed.
【０００３】[0003]
【発明が解決しようとする課題】ところで、前記従来技
術における各構造で、より薄型化を追求していった場
合、次のような欠点がある。図３の構造においては、ベ
ースになる絶縁基板１の厚みがＬＥＤの総厚に加わって
くるため、薄型化を追求する場合この絶縁基板１の厚み
を薄くする必要がある。ところが、ＬＥＤの機械的、及
び熱的信頼性を考慮した場合、薄くするのにも限界があ
り、ＬＥＤの薄型化の妨げになっていた。次に図４の構
造においてであるが、本構造の場合図３の絶縁基板１に
相当するものは構成要素にない。絶縁基板は、ＬＥＤ素
子を実装するための一対の電極を保持し、機械的、及び
熱的な安定を保たせる目的を有している。図４の構造に
おいては、この絶縁基板が無いために、電極７、８の上
方向と下方向に各々樹脂６が回り込むように形成し、電
極の保持、安定を図らなければならない。特に、電極
７、８の下方向の樹脂の一部６ａが電極の保持、安定に
重要な役割を果たしているわけだが、本構造の場合、こ
の樹脂の一部６ａがＬＥＤの薄型化の妨げになってい
た。However, when pursuing further reduction in thickness in each of the structures in the prior art, there are the following disadvantages. In the structure of FIG. 3, since the thickness of the insulating substrate 1 serving as a base is added to the total thickness of the LED, it is necessary to reduce the thickness of the insulating substrate 1 when pursuing a reduction in thickness. However, in consideration of the mechanical and thermal reliability of the LED, there is a limit in making the LED thinner, which hinders the thinning of the LED. Next, in the structure of FIG. 4, in the case of the present structure, there is no component corresponding to the insulating substrate 1 of FIG. The insulating substrate has a purpose of holding a pair of electrodes for mounting the LED element and maintaining mechanical and thermal stability. In the structure of FIG. 4, since there is no insulating substrate, the resin 6 must be formed so that the resin 6 goes around in the upward and downward directions of the electrodes 7 and 8, respectively, to maintain and stabilize the electrodes. In particular, the part 6a of the resin in the downward direction of the electrodes 7 and 8 plays an important role in holding and stabilizing the electrodes. In the case of this structure, the part 6a of the resin prevents the thinning of the LED. Had become.
【０００４】本発明は、上記課題を解決せんとするもの
であり、必要とされる性能、及び機械的、熱的信頼性を
具備しながら、さらに薄型のＬＥＤを提供することを目
的とする。An object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide a thinner LED while providing required performance and mechanical and thermal reliability.
【０００５】[0005]
【課題を解決するための手段】本発明のＬＥＤは、前記
課題を解決するために、絶縁基板上に一対の電極を形成
し、該一対の電極の一方にＬＥＤ素子を実装し、該一対
の電極の他方と金属細線によりワイヤーボンディング接
続され、該ＬＥＤ素子と該金属細線を覆うように透光性
樹脂にて封止したチップＬＥＤにおいて、ＬＥＤ素子を
実装する部分の絶縁基板に、ＬＥＤ素子より大きい貫通
穴、または溝等からなる収納部を設け、該収納部の一方
の開口部内に前記一対の電極の少なくとも一方が形成さ
れ、該電極上にＬＥＤ素子が、一個または複数個実装さ
れた構造を有している。In order to solve the above problems, an LED according to the present invention has a pair of electrodes formed on an insulating substrate, and an LED element is mounted on one of the pair of electrodes. In a chip LED, which is wire-bonded to the other of the electrodes by a thin metal wire and sealed with a translucent resin so as to cover the LED element and the thin metal wire, an insulating substrate at a portion where the LED element is mounted is connected to the LED element. A structure in which a storage portion including a large through hole or a groove is provided, at least one of the pair of electrodes is formed in one opening of the storage portion, and one or more LED elements are mounted on the electrode. have.
【０００６】[0006]
【作用】本発明のＬＥＤは、ＬＥＤ素子が、絶縁基板に
設けられたＬＥＤ素子より大きい穴からなる収納部の一
方の開口部内に形成された電極上に実装されているた
め、絶縁基板の厚みがＬＥＤの総厚に影響を与えなくな
り、従来技術を用いた図３のＬＥＤよりも、絶縁基板の
厚み分だけ薄型化を実現することが可能になる。又、従
来技術を用いた図４のＬＥＤと比較した場合、本発明の
ＬＥＤは穴をあけているとは言え、ＬＥＤ素子を実装す
るための、一対の電極を保持し機械的、及び熱的な安定
を保たせるに十分な絶縁基板を具備している。したがっ
て、図４のように透光性樹脂を、ＬＥＤ素子を実装する
ための一対の電極の下方向まで形成させる必要が無く、
これと比較しても、より薄型化を可能にしている。According to the LED of the present invention, since the LED element is mounted on the electrode formed in one opening of the housing portion having a hole larger than the LED element provided on the insulating substrate, the thickness of the insulating substrate is reduced. Has no effect on the total thickness of the LED, and can be made thinner by the thickness of the insulating substrate than the LED of FIG. 3 using the conventional technology. In addition, when compared with the LED of FIG. 4 using the conventional technology, the LED of the present invention has a pair of electrodes for mounting the LED element and has mechanical and thermal It has a sufficient insulating substrate to keep the stability. Therefore, there is no need to form the translucent resin below the pair of electrodes for mounting the LED element as shown in FIG.
Compared to this, it is possible to further reduce the thickness.
【０００７】[0007]
【実施例】以下、図面に基づいて本発明の一実施例を説
明する。図１は本発明の一実施例を表す斜視図、図２は
その中央断面図を表す。図１及び図２において、１は略
直方体形状を成した絶縁基板であり、この絶縁基板１の
略中央付近にＬＥＤ素子の大きさより大きい、丸状の穴
１ａからなる収納部が形成されている。さらに、絶縁基
板１の表面にメッキ配線による金属パターンからなる一
対の電極２、３が形成される。電極２、３はいずれも、
絶縁基板１の下面から側面を通り上面までコの字状を成
し、電極２と３が対向するように形成されている。又、
電極２は絶縁基板１にあけられた丸状の穴１ａを下面側
からふさぐように図中下方の開口部内にも突出して形成
されている。ＬＥＤ素子４は、この絶縁基板１に形成さ
れた穴１ａに落とし込む形で、電極２の下面部２ａに銀
ペースト等の導電性接着剤を用いて接着実装される。実
装されたＬＥＤ素子４はもう一方の電極３の上面部３ｂ
と金属細線５でワイヤーボンディング接続される。透光
性樹脂６はＬＥＤ素子４と金属細線５を覆う形で、絶縁
基板１の上面上にのみ形成されている。この時、絶縁基
板１の厚みをＬＥＤ素子４の厚みと同じか、それ以下に
設定することにより、ＬＥＤとしての総厚に絶縁基板１
の厚みを考慮する必要が無くなり、より薄型のＬＥＤが
実現できることになる。尚、絶縁基板１に設ける穴１ａ
は本実施例のような丸状だけでなく、楕円状または多角
状等であってもよい。An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a perspective view showing one embodiment of the present invention, and FIG. 2 is a central sectional view thereof. 1 and 2, reference numeral 1 denotes an insulating substrate having a substantially rectangular parallelepiped shape, and a storage portion having a round hole 1 a larger than the size of the LED element is formed near the center of the insulating substrate 1. . Further, a pair of electrodes 2 and 3 formed of a metal pattern by plating wiring are formed on the surface of the insulating substrate 1. Each of the electrodes 2 and 3 is
The U-shape is formed from the lower surface of the insulating substrate 1 through the side surface to the upper surface, and the electrodes 2 and 3 are formed so as to face each other. or,
The electrode 2 is also formed so as to protrude into the lower opening in the figure so as to cover the round hole 1a formed in the insulating substrate 1 from the lower surface side. The LED element 4 is bonded and mounted on the lower surface 2a of the electrode 2 using a conductive adhesive such as a silver paste so as to be dropped into a hole 1a formed in the insulating substrate 1. The mounted LED element 4 is the upper surface 3b of the other electrode 3.
Is connected by wire bonding with a thin metal wire 5. The translucent resin 6 is formed only on the upper surface of the insulating substrate 1 so as to cover the LED elements 4 and the fine metal wires 5. At this time, by setting the thickness of the insulating substrate 1 to be equal to or less than the thickness of the LED element 4, the insulating substrate 1 has a total thickness as an LED.
There is no need to consider the thickness of the LED, and a thinner LED can be realized. The hole 1a provided in the insulating substrate 1
May be not only a round shape as in the present embodiment but also an elliptical shape or a polygonal shape.
【０００８】図５に本発明の他の実施例に係るＬＥＤの
斜視図、図６にその中央断面図を示す。本実施例の場
合、絶縁基板１の表面に形成された一対の電極２、３
は、絶縁基板１の下面側及び穴１ａの図中下方の開口部
内に突出するようにしか形成されておらず、側面及び上
面には形成されていない。また、これにともない、ＬＥ
Ｄ素子４とワイヤーボンディング接続されるもう一方の
電極３の接続場所が前記実施例の時と異なり、穴１ａ内
の電極３の下面部３ａに接続されている。この場合、絶
縁基板１に形成する穴１ａを前記実施例と比較し、より
大きくする必要があるが、絶縁基板１表面のメッキ配線
からなる金属パターンが下面側片側のみですむため、製
造コストを下げることが可能となり、薄型でなおかつ安
価なＬＥＤの提供が可能となる。FIG. 5 is a perspective view of an LED according to another embodiment of the present invention, and FIG. 6 is a central sectional view thereof. In the case of the present embodiment, a pair of electrodes 2 and 3 formed on the surface of the insulating substrate 1
Are formed so as to protrude only into the lower surface side of the insulating substrate 1 and the opening below the hole 1a in the figure, and are not formed on the side surface and the upper surface. Also, with this, LE
The connection location of the other electrode 3 that is wire-bonded to the D element 4 is different from that of the above embodiment, and is connected to the lower surface 3a of the electrode 3 in the hole 1a. In this case, it is necessary to make the hole 1a formed in the insulating substrate 1 larger than that of the above embodiment, but the metal pattern composed of the plated wiring on the surface of the insulating substrate 1 only needs to be on one side on the lower side, so that the manufacturing cost is reduced. It is possible to provide a thin and inexpensive LED.
【０００９】図７に本発明のさらに他の実施例に係るＬ
ＥＤの斜視図を示す。本実施例の場合、絶縁基板１に設
けられている穴が、絶縁基板１の一辺から対向する他の
一辺まで溝状に形成されており、該溝が絶縁基板１を二
分する形になっている。本発明において絶縁基板に設け
られる穴は、四方を絶縁基板に囲まれた完全な穴だけで
なく、このように二辺を解放した溝であっても良い。
尚、本実施例における電極２、３は、二分された絶縁基
板１の間に掛け渡されるように形成されている。FIG. 7 shows an L according to still another embodiment of the present invention.
FIG. 3 shows a perspective view of the ED. In the case of this embodiment, the holes provided in the insulating substrate 1 are formed in a groove shape from one side of the insulating substrate 1 to the other side opposite thereto, and the groove divides the insulating substrate 1 into two. I have. In the present invention, the holes provided in the insulating substrate may be not only complete holes surrounded on all sides by the insulating substrate but also grooves having two open sides as described above.
Note that the electrodes 2 and 3 in the present embodiment are formed so as to be bridged between the two divided insulating substrates 1.
【００１０】図８に本発明のさらに他の実施例に係るＬ
ＥＤの斜視図を示す。本実施例の場合、絶縁基板１に設
けられている穴１ａ内にＬＥＤ素子が２個実装されてい
る。このように穴１ａ内に実装されるＬＥＤ素子の数は
一個のみならず、複数個であっても良い。FIG. 8 shows L according to still another embodiment of the present invention.
FIG. 3 shows a perspective view of the ED. In the case of this embodiment, two LED elements are mounted in the hole 1a provided in the insulating substrate 1. Thus, the number of LED elements mounted in the hole 1a is not limited to one, and may be plural.
【００１１】[0011]
【発明の効果】以上のように、本発明のＬＥＤは、絶縁
基板に穴又は溝等からなる収納部を設け、その穴または
溝等の中にＬＥＤ素子を実装することにより、ＬＥＤの
総厚に対して絶縁基板の厚みを考慮する必要が無くな
り、ＬＥＤに要求される性能、及び機械的、熱的信頼性
を損なうことなく、薄型のＬＥＤを提供することを可能
にするものである。As described above, the LED of the present invention has a total thickness of the LED by providing a storage portion including a hole or a groove on the insulating substrate and mounting the LED element in the hole or the groove. Therefore, it is not necessary to consider the thickness of the insulating substrate, and it is possible to provide a thin LED without impairing the performance required for the LED and the mechanical and thermal reliability.
【図１】本発明の一実施例に係るＬＥＤを示す斜視図。FIG. 1 is a perspective view showing an LED according to an embodiment of the present invention.
【図２】図１に示すＬＥＤの中央断面図。FIG. 2 is a central sectional view of the LED shown in FIG. 1;
【図３】従来のＬＥＤを示す斜視図。FIG. 3 is a perspective view showing a conventional LED.
【図４】従来のＬＥＤを示す斜視図。FIG. 4 is a perspective view showing a conventional LED.
【図５】本発明の他の実施例に係るＬＥＤを示す斜視
図。FIG. 5 is a perspective view showing an LED according to another embodiment of the present invention.
【図６】図５に示すＬＥＤの中央断面図。FIG. 6 is a central sectional view of the LED shown in FIG. 5;
【図７】本発明のさらに他の実施例に係るＬＥＤを示す
斜視図。FIG. 7 is a perspective view showing an LED according to still another embodiment of the present invention.
【図８】本発明のさらに他の実施例に係るＬＥＤを示す
斜視図。FIG. 8 is a perspective view showing an LED according to still another embodiment of the present invention.
１ 絶縁基板 ２、３ 電極 ４ ＬＥＤ素子 ５ 金属細線 ６ 透光性樹脂 ７、８ 金属電極 DESCRIPTION OF SYMBOLS 1 Insulating substrate 2, 3 electrode 4 LED element 5 Fine metal wire 6 Translucent resin 7, 8 Metal electrode
フロントページの続き (56)参考文献 特開 平７−235696（ＪＰ，Ａ) 特開 平６−37359（ＪＰ，Ａ) 特開 平５−315654（ＪＰ，Ａ) 実開 平６−7263（ＪＰ，Ｕ) (58)調査した分野(Int.Cl.7，ＤＢ名) H01L 33/00 Continuation of the front page (56) References JP-A-7-235696 (JP, A) JP-A-6-37359 (JP, A) JP-A-5-315654 (JP, A) JP-A-6-7263 (JP) , U) (58) Field surveyed (Int. Cl. 7 , DB name) H01L 33/00
Claims (4)
部をふさぐように形成された下面部をそれぞれ有する一
対の電極と、 前記一対の電極の一方の下面部上に実装され、前記一対
の電極の他方の下面部に金属細線にてワイヤーボンディ
ング接続された発光ダイオード素子と、 該発光ダイオード素子及び前記金属細線を覆う透光性樹
脂と、 を有することを特徴とする発光ダイオード。 An insulating substrate having a through hole, and an opening formed on a bottom surface of the insulating substrate and below the through hole.
Each having a lower surface portion formed so as to close the portion.
A pair of electrodes , mounted on a lower surface of one of the pair of electrodes;
Wire bonding with a thin metal wire on the lower surface of the other electrode
Light-emitting diode element connected by a ring, and a light-transmitting tree covering the light-emitting diode element and the metal wire.
Light emitting diode and having a fat, a.
に形成され、前記溝の下方開口部をふさぐように形成さ
れた下面部をそれぞれ有する一対の電極と、 前記一対の電極の一方の下面部上に実装され、前記一対
の電極の他方の下面部に金属細線にてワイヤーボンディ
ング接続された発光ダイオード素子と、 該発光ダイオード素子及び前記金属細線を覆う透光性樹
脂と、 を有することを特徴とする発光ダイオード。 2. An insulating substrate divided into two parts by a groove and a bottom surface of the insulating substrate so as to be stretched over the divided insulating substrate.
Formed so as to close the lower opening of the groove.
A pair of electrodes each having a lower surface portion, and a pair of electrodes mounted on one lower surface portion of the pair of electrodes.
Wire bonding with a thin metal wire on the lower surface of the other electrode
Light-emitting diode element connected by a ring, and a light-transmitting tree covering the light-emitting diode element and the metal wire.
Light emitting diode and having a fat, a.
ド素子の厚みと同じかそれ以下に設定することを特徴と
する請求項１又は２に記載の発光ダイオード。 3. The light emitting diode according to claim 3, wherein said insulating substrate has a thickness.
The thickness is set equal to or less than the thickness of the element.
The light-emitting diode according to claim 1.
ダイオード素子からなることを特徴とする請求項１乃至
３の一つに記載の発光ダイオード。 4. A light emitting diode device comprising : a plurality of light emitting diodes;
4. A semiconductor device comprising a diode element.
A light emitting diode according to one of the three.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28256594A JP3302203B2 (en) | 1994-10-21 | 1994-10-21 | Light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28256594A JP3302203B2 (en) | 1994-10-21 | 1994-10-21 | Light emitting diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08125227A JPH08125227A (en) | 1996-05-17 |
| JP3302203B2 true JP3302203B2 (en) | 2002-07-15 |
Family
ID=17654142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28256594A Expired - Lifetime JP3302203B2 (en) | 1994-10-21 | 1994-10-21 | Light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3302203B2 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3784976B2 (en) | 1998-12-22 | 2006-06-14 | ローム株式会社 | Semiconductor device |
| WO2006030671A1 (en) | 2004-09-16 | 2006-03-23 | Hitachi Aic Inc. | Reflector for led and led device |
| JP4798432B2 (en) * | 2005-11-21 | 2011-10-19 | ミネベア株式会社 | Surface lighting device |
| JP4865525B2 (en) * | 2006-08-03 | 2012-02-01 | イッツウェル カンパニー リミテッド | SML type light emitting diode lamp element and manufacturing method thereof |
| TW200822384A (en) * | 2006-11-03 | 2008-05-16 | Coretronic Corp | LED package structure |
| JP2008235765A (en) * | 2007-03-23 | 2008-10-02 | Matsushita Electric Ind Co Ltd | Light-emitting device |
| JP5270861B2 (en) * | 2007-05-15 | 2013-08-21 | シチズン電子株式会社 | Backlight light source |
| JP5121544B2 (en) * | 2008-04-11 | 2013-01-16 | スタンレー電気株式会社 | Semiconductor light emitting device |
-
1994
- 1994-10-21 JP JP28256594A patent/JP3302203B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH08125227A (en) | 1996-05-17 |
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