KR200162271Y1 - Eprom memory card - Google Patents
Eprom memory card Download PDFInfo
- Publication number
- KR200162271Y1 KR200162271Y1 KR2019930027069U KR930027069U KR200162271Y1 KR 200162271 Y1 KR200162271 Y1 KR 200162271Y1 KR 2019930027069 U KR2019930027069 U KR 2019930027069U KR 930027069 U KR930027069 U KR 930027069U KR 200162271 Y1 KR200162271 Y1 KR 200162271Y1
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- South Korea
- Prior art keywords
- package
- memory card
- epitaxial
- glass
- small substrate
- Prior art date
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- 239000000758 substrate Substances 0.000 claims abstract description 21
- 239000011521 glass Substances 0.000 claims abstract description 12
- 229920005989 resin Polymers 0.000 claims abstract description 3
- 239000011347 resin Substances 0.000 claims abstract description 3
- 238000000465 moulding Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000001681 protective effect Effects 0.000 description 2
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
- H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
- H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Credit Cards Or The Like (AREA)
Abstract
본 고안은 다수개의 반도체 패키지를 하나의 소형 기판에 실장하여 기억 용량을 확장시키는 구조의 메모리 카드에 관한 것으로, 특히 아직까지 실현되고 있지 않은 이피롬의 메모리 카드화에 적합하도록 한 이피 롬 메모리 카드에 관한 것이다. 본 고안에 의한 이피 롬 메모리 카드는 일측변부에 접속 패드(10)가 형성되고 일측면 또는 양면에 다수개의 패키지 실장홈(11a)이 형성된 소형 기판(11)과, 상기 패키지 실장홈(11a)에 글래스(13) 부분을 제외한 부분이 삽입되어 실장되는 이피 롬 패키지(12)로 구성되며, 상기 이피 롬 패키지(12)의 글래스(13) 부분을 제외한 소형 기판(11)과 이피 롬 패키지(12)를 수지로 몰딩하여서 된다.The present invention relates to a memory card having a structure that expands the storage capacity by mounting a plurality of semiconductor packages on a single small substrate, and in particular to an epitaxial memory card that is suitable for the memory card of the pyramid that has not been realized yet It is about. The epitaxial memory card according to the present invention has a small substrate 11 having a connection pad 10 formed at one side and a plurality of package mounting grooves 11a formed at one side or both sides thereof, and the package mounting groove 11a. It consists of an epitaxial package 12 in which a portion other than the glass 13 portion is inserted into and mounted, and the small substrate 11 and the epitaxial package 12 except for the glass 13 portion of the epitaxial package 12 are mounted. ) May be molded by resin.
Description
제1도는 종래 일반적으로 알려지고 있는 에스 램 메모리 카드의 사시도.1 is a perspective view of a conventionally known SRAM memory card.
제2도는 본 고안 이피롬 메모리 카드의 사시도.2 is a perspective view of the present invention pyrom memory card.
제3도는 본 고안 글래스 탑재형 이피 롬 패키지의 상세 단면도.3 is a detailed cross-sectional view of the glass-mounted epi ROM package of the present invention.
제4도는 본 고안 이피 롬 메모리 카드의 실장 예시도.4 is an exemplary view of mounting an EPI ROM memory card of the present invention.
제5도는 본 고안과 종래 서-딥 패키지와의 실장 상태 비교도.5 is a view showing a mounting state of the present invention and the conventional sur-dip package.
〈도면의 주요부분에 대한 부호의 설명〉<Explanation of symbols for main parts of drawing>
10 : 접속 패드 11 : 소형 기판10: connection pad 11: small board
11a : 패키지 실장홈 12 : 이피 롬 패키지11a: package mounting groove 12: IP ROM package
본 고안은 다수개의 반도체 패키지를 하나의 소형 기판에 실장하여 기억 용량을 확장시키는 구조의 메모리 카드(Memory Card)에 관한 것으로, 특히 아직까지 실현되고 있지 않은 이피 롬 메모리 카드(EP ROM Memory Card)에 관한 것이다.The present invention relates to a memory card having a structure in which a plurality of semiconductor packages are mounted on one small substrate to expand the storage capacity, and particularly to an EP ROM memory card that has not been realized yet. It is about.
일반적으로 메모리 카드는 다수개의 반도체 패키지를 하나의 작은 소형 기판에 실장하여 기억 용량을 크게 확장시킨 것으로서, 이러한 메모리 카드의 조건으로는 소형기판에 실장되는 반도체 패키지의 두께와 실장 면적이 작아야만 된다는 조건이 필수적으로 따라야만 한다.In general, a memory card is a device in which a large number of semiconductor packages are mounted on a single small substrate to greatly expand the storage capacity. The condition of the memory card is that the semiconductor package to be mounted on the small substrate must have a small thickness and a mounting area. This must be followed.
그러나 이피 롬은 그 소자의 특성상 칩의 상면에 데이터(Data) 소거를 위한 수광영역부를 가져야 하므로 패키지의 두께를 줄이는 데에는 한계가 있어 메모리 카드를 구성하는 데 어려움이 있었다.However, since the EPROM has a light receiving area for erasing data on the upper surface of the chip, there is a limit in reducing the thickness of the package, which makes it difficult to construct a memory card.
부연하면, 종래 이피 롬 메모리 카드는 알려지고 있지 않으며, 마스트 롬, 디-램. 에스 램 및 플래스 메모리 등의 디바이스가 카드화된 것이 일반적으로 알려지고 있다.In other words, conventional EPI ROM memory cards are not known, such as mast ROM and D-RAM. It is generally known that devices such as SRAM and flash memory are carded.
제1도는 종래 에스 램(SRAM) 메모리 카드의 구조를 보인 사시도로서, 도시한 바와 같이 일반적인 메모리 카드는 하나의 소형 기판(1)에 다수개의 패키지(2), 예컨대 플라스틱 티에스오피(Plastic TOSP; Thin Small Out-line Package)와 티큐에프트(TQFT: Thin Quad Flat Package)를 실장한 구조로 되어 있다.FIG. 1 is a perspective view showing the structure of a conventional SRAM memory card. As shown, a typical memory card includes a plurality of packages 2 on one small substrate 1, for example, a plastic TOSP (Thin). Small Out-line Package (TQFT) and Thin Quad Flat Package (TQFT).
상기 소형 기판(1)의 일측변에는 접속 패드(1a)가 형성되어 있다.A connection pad 1a is formed on one side of the small substrate 1.
상기와 같은 메모리 카드는 그 두께와 면적이 한정되어 있어 실장되는 소자의 두께와 실장 면적이 작아야만 메모리 카드를 형성할 수 있으나, 이피 롬은 칩 위쪽에 데이터 소거를 위한 수광영역을 가져야 하므로 현재까지 서-딥(CER-DIP; Ceramic Dual-Inline Package)으로만 형성하고 있었다.Since the memory card is limited in thickness and area, the memory card can be formed only if the thickness and the mounting area of the mounted device are small. However, since the EPROM has a light-receiving area for erasing data on the chip, it has been It was formed only with CER-DIP (Ceramic Dual-Inline Package).
따라서 이피 롬 패키지는 그의 두께 및 실장 면적이 크다는 문제로 메모리 카드화에 부적합한 것이었다.Therefore, the Epi ROM package was unsuitable for the memory card due to its large thickness and mounting area.
본 고안은 이피 롬을 소형으로 패키징하여 메모리 카드화하는 데 목적이 있다.The object of the present invention is to miniaturize the epi-ROM and make it a memory card.
상기와 같은 본 고안의 목적을 달성하기 위하여 일측변부에 접속 패드(10)가 형성되고 일측면 또는 양면에 다수개의 패키지 실장홈(11a)이 형성된 소형 기판(11)과, 상기 패키지 실장홈(11a)에 글래스(13) 부분을 제외한 부분이 삽입되어 실장되는 이피 롬 패키지(12)로 구성되며, 상기 이피 롬 패키지(12)의 글래스(13) 부분을 제외한 소형 기판(11)과 이피 롬 패키지(12)를 수지로 몰딩하여서 됨을 특징으로 하는 이피 롬 메모리 카드가 제공된다.In order to achieve the object of the present invention as described above, the connection pad 10 is formed on one side and a small substrate 11 having a plurality of package mounting grooves 11a formed on one side or both sides, and the package mounting groove ( 11a) is composed of an epitaxial package 12 in which a portion other than the glass 13 portion is inserted and mounted, and the small substrate 11 and the epitaxial package except for the glass 13 portion of the epitaxial package 12 are mounted. There is provided an EPI ROM memory card characterized by molding 12 as a resin.
이하, 상기한 바와 같은 본 고안에 의한 이피 롬 메모리 카드를 첨부 도면에 의거하여 보다 상세히 설명한다.Hereinafter, the EPI ROM memory card according to the present invention as described above will be described in more detail with reference to the accompanying drawings.
첨부한 제2도는 본 고안 이피 롬 메모리 카드의 전체 구성을 보인 사시도이고, 제3도는 본 고안 이피 롬 패키지의 구조를 보인 단면도이며, 제4도는 본 고안 패키지의 실장예를 보인 것이고, 제5도는 본 고안과 종래 서-딥 패키지와의 실장 상태 비교도로서, 이에 도시한 바와 같이 본 고안에 의한 이피 롬 메모리 카드는 일측변부에 접속 패드(10)가 형성된 소형 기판(11)의 일측면 또는 양면에 다수개의 글래스 탑재형 이피 롬패키지(12)를 실장한 구조로 되어 있다.2 is a perspective view showing the overall configuration of the present invention EPROM memory card, FIG. 3 is a sectional view showing the structure of the present invention EPROM package, and FIG. 4 is a mounting example of the present invention package, and FIG. As a diagram showing a comparison between the present invention and a conventional stand-dip package, an epitaxial memory card according to the present invention may include a side surface of a small substrate 11 having a connection pad 10 formed at one side thereof, or A plurality of glass mounting type ROM packages 12 are mounted on both sides.
상기 소형 기판(11)에는 다수개의 패키지 실장홈(11a)이 형성되어 이 실장홈(11a)에 패키지(12)가 전도성 페이스트에 의해 기판(11)과 전기적으로 접속되도록 실장되어 있고, 패키지(12)가 실장된 소형 기판(11)은 패키지의 글래스 부분을 제외한 기판(11)전체가 에폭시 수지 등에 의해 몰딩되어 있다.A plurality of package mounting grooves 11a are formed in the small substrate 11 so that the package 12 is mounted in the mounting groove 11a such that the package 12 is electrically connected to the substrate 11 by a conductive paste. In the small board | substrate 11 with which () is mounted, the board | substrate 11 whole except the glass part of a package is molded by epoxy resin etc.
상기 글래스 탑재형 이피 롬 패키지(12)는 연결 회로(13a)가 형성된 글래스(13)를 도전 범프(14a)가 형성된 이피 롬 소자(14)의 상부에 탑재하여 범프 본딩한 구조로 되어 있고, 상기 소자(14) 부분을 에폭시(15)로 인슐레이션하여 구성하게 된다.The glass-mounted epitaxial package 12 has a structure in which the glass 13 on which the connection circuit 13a is formed is mounted on top of the epitaxial element 14 on which the conductive bumps 14a are formed, and is bump bonded. A portion of the element 14 is insulated with epoxy 15.
상기와 같이 구성된 이피 롬 패키지는 글래스(13)를 커팅하여 제3도와 같이 단일소자로 분리한 다음 제4도와 같이 실장홈(11a)이 형성된 소형 기판(11)에 전도성 페이스트를 이용하여 본딩하고, 기판(11)을 수광부인 글래스(13)가 노출되도록 전체적으로 몰딩하여 메모리 카드를 제조하게 된다.The epi-rom package configured as described above is cut glass 13 and separated into a single device as shown in FIG. 3, and then bonded to the small substrate 11 having the mounting groove 11a is formed using a conductive paste as shown in FIG. A memory card is manufactured by molding the substrate 11 as a whole so that the glass 13 serving as the light receiving portion is exposed.
상기와 같이 소형 기판(11)의 몰딩을 완료한 후에는 글래스(13)가 돌출된 부분을 보호 테이프로 부착하게 되는 데, 이때 보호 테이프는 빛을 차단하는 재질로 이루어진 것을 사용한다.After the molding of the small substrate 11 is completed as described above, the glass 13 is protruded with a protective tape, in which case the protective tape is made of a material that blocks light.
이와같이 된 본 고안의 이피 롬 메모리 카드는 소형의 이피 롬 패키지를 하나의 작은 기판에 장착하여 구성하는 것으로서 대용량의 메모리를 수용할 수 있고, 수광영역을 갖는 이피 롬 메모리 카드를 제작할 수 있다는 효과가 있다.The epi-ROM memory card of the present invention is constructed by mounting a small epi-ROM package on one small substrate, which can accommodate a large amount of memory, and can produce an epi-ROM memory card having a light receiving area. .
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930027069U KR200162271Y1 (en) | 1993-12-09 | 1993-12-09 | Eprom memory card |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019930027069U KR200162271Y1 (en) | 1993-12-09 | 1993-12-09 | Eprom memory card |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR950021508U KR950021508U (en) | 1995-07-28 |
| KR200162271Y1 true KR200162271Y1 (en) | 1999-12-15 |
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ID=19370423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019930027069U KR200162271Y1 (en) | 1993-12-09 | 1993-12-09 | Eprom memory card |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200162271Y1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000036382A (en) * | 2000-02-29 | 2000-07-05 | 민훈 | Non Volatile Memory Card With Diestacked Pakage |
-
1993
- 1993-12-09 KR KR2019930027069U patent/KR200162271Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR950021508U (en) | 1995-07-28 |
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