JPS61134034U - - Google Patents

Info

Publication number
JPS61134034U
JPS61134034U JP1985125130U JP12513085U JPS61134034U JP S61134034 U JPS61134034 U JP S61134034U JP 1985125130 U JP1985125130 U JP 1985125130U JP 12513085 U JP12513085 U JP 12513085U JP S61134034 U JPS61134034 U JP S61134034U
Authority
JP
Japan
Prior art keywords
electron beam
substrate
pattern
electron
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1985125130U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS61134034U publication Critical patent/JPS61134034U/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Image Input (AREA)

Description

【図面の簡単な説明】
第１図は本考案による装置の概略説明図、第２
図は第１図の装置の部分を示す説明図、第３図は
本考案の説明に要する電流波形図、第４図は本考
案による装置がトレースするパターンの一例を示
す平面図、第５図は第４図のパターンの部分の詳
細図、第６図は像の各ラインの状態を示す説明図
、第７図は第１図に示した装置に関連した論理装
置のブロツク図、第８図は走査装置に加えられる
時間をベースとした電圧関数を示すグラフ図、第
９図乃至第１３図は本考案で用いられるコードの
表である。 １……陰極、２……変調電極、３……陽極、４
……矩形ダイヤフラム、４０……コンデンサレン
ズ、５……電子光学素子、６……サンプル、７…
…偏向装置、８，９……モータ。
補正 昭６１．２．２０ 図面の簡単な説明を次のように補正する。 明細書第１８頁第７行乃至９行の「第９図乃至
第１３図…である。」を「第９図乃至第１３図は
本考案で用いられるコードの図表である。」と訂
正する。

Claims (1)

  1. 【実用新案登録請求の範囲】 電子ビームを発生する電子光学装置と、前記電
    子ビームを偏向する偏向装置と、前記電子ビーム
    の強度をオンオフ制御する制御電極と、前記偏向
    装置と前記制御電極とを制御するデータ処理装置
    とを備え、基板上にパターンを自動的にトレース
    するパターン自動トレース装置において、 前記電子ビームの経路上に、前記電子ビームの
    透過範囲を定めるダイヤフラムと、前記ダイヤフ
    ラムの極めて小さい縮少像を前記基板上に投影す
    る電子レンズとを備え、前記偏向装置が、第１の
    方向Ｏｘに平行に走査し、前記データ処理装置に
    よつて動かされる駆動モータが前記第１の方向Ｏ
    ｘに垂直な第２の方向Ｏｙに平行に前記基板を順
    々に変位させて前記基板を第２の方向Ｏｙに走査
    しつつ、前記電子ビームをオンオフ制御すること
    により、一連の露光および非露光領域で前記基板
    上に前記パターンを形成することを特徴とするパ
    ターン自動スレース装置。
JP1985125130U 1974-12-13 1985-08-14 Pending JPS61134034U (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7441130A FR2294489A1 (fr) 1974-12-13 1974-12-13 Dispositif pour le trace programme de dessins par bombardement de particules

Publications (1)

Publication Number Publication Date
JPS61134034U true JPS61134034U (ja) 1986-08-21

Family

ID=9146138

Family Applications (2)

Application Number Title Priority Date Filing Date
JP50149041A Pending JPS5185826A (ja) 1974-12-13 1975-12-13
JP1985125130U Pending JPS61134034U (ja) 1974-12-13 1985-08-14

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP50149041A Pending JPS5185826A (ja) 1974-12-13 1975-12-13

Country Status (7)

Country Link
US (1) US4051381A (ja)
JP (2) JPS5185826A (ja)
DE (1) DE2556151A1 (ja)
FR (1) FR2294489A1 (ja)
GB (1) GB1529819A (ja)
NL (1) NL7514441A (ja)
SE (1) SE403412B (ja)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2339909A1 (fr) * 1976-01-30 1977-08-26 Thomson Csf Systeme pour le dessin programme par bombardement de particules
FR2361190A1 (fr) * 1976-08-09 1978-03-10 Zeiss Carl Fa Procede et dispositif d'usinage a froid par faisceau electronique
JPS5394773A (en) * 1977-01-31 1978-08-19 Cho Lsi Gijutsu Kenkyu Kumiai Method of connecting graph in charged beam exposing device
JPS5493364A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Exposure system for electron beam
JPS5577142A (en) * 1978-12-07 1980-06-10 Toshiba Corp Electron beam exposure apparatus
JPS55146931A (en) * 1979-05-04 1980-11-15 Hitachi Ltd Depicting method by electronic beam
US4310743A (en) * 1979-09-24 1982-01-12 Hughes Aircraft Company Ion beam lithography process and apparatus using step-and-repeat exposure
US4382186A (en) * 1981-01-12 1983-05-03 Energy Sciences Inc. Process and apparatus for converged fine line electron beam treatment of objects
JPS57174467A (en) * 1981-04-20 1982-10-27 Inoue Japax Res Inc Ion working device
DD203429A1 (de) * 1981-08-03 1983-10-19 Eichhorn Hans Guenther Schaltungsanordnung zur steuerung eines korpuskularstrahls
JPS58105543A (ja) * 1981-12-03 1983-06-23 エテック・システムズ・インコーポレイテッド ゲ−トアレ−特徴描写のための方法
JPS5941831A (ja) * 1982-08-31 1984-03-08 Toshiba Corp 電子ビ−ム描画方法
GB8415623D0 (en) * 1984-06-19 1984-07-25 Nixon W C Charged particle sources
US4673794A (en) * 1985-05-10 1987-06-16 National Research Institute For Metals Electron beam welding method
US4740904A (en) * 1985-11-01 1988-04-26 Nagle John B Line following system and process
JPS6394623A (ja) * 1986-10-09 1988-04-25 Hitachi Ltd 描画装置
KR920000941B1 (ko) * 1988-02-16 1992-01-31 후지쓰 가부시끼가이샤 전자빔 노광장치
JP2501726B2 (ja) * 1991-10-08 1996-05-29 インターナショナル・ビジネス・マシーンズ・コーポレイション コンピュ―タ・イメ―ジ生成装置及びデ―タ減縮方法
DE19642116C2 (de) * 1996-10-12 2000-12-07 Fraunhofer Ges Forschung Verfahren zur strukturierten Energieübertragung mit Elektronenstrahlen
DE102017213608B4 (de) 2017-08-04 2020-06-18 Tayyar Bayrakci Gleichstromzyklonabscheider
US20220390828A1 (en) * 2021-06-07 2022-12-08 United Microelectronics Corp. Method of making mask pattern and method of forming pattern in layer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145865A (ja) * 1974-04-18 1975-11-22

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT301620B (de) * 1967-10-23 1972-08-15 Siemens Ag Verfahren zum herstellen einer photolackmaske fuer halbleiterzwecke
US3644700A (en) * 1969-12-15 1972-02-22 Ibm Method and apparatus for controlling an electron beam
DE2038119C3 (de) * 1970-07-31 1974-01-17 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lichtzeicheneinrichtung mit einer drehbar gelagerten Objektscheibe. Zusatz zii:1588412
FR39852E (fr) * 1972-06-30 1932-03-24 Ig Farbenindustrie Ag Procédé de production de colorants solides pour cuve
US3778626A (en) * 1972-07-28 1973-12-11 Western Electric Co Mechanical scan system for ion implantation
US3894271A (en) * 1973-08-31 1975-07-08 Ibm Method and apparatus for aligning electron beams
US3866013A (en) * 1973-09-19 1975-02-11 Ibm Method and apparatus for controlling movable means such as an electron beam
US3914608A (en) * 1973-12-19 1975-10-21 Westinghouse Electric Corp Rapid exposure of micropatterns with a scanning electron microscope

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50145865A (ja) * 1974-04-18 1975-11-22

Also Published As

Publication number Publication date
JPS5185826A (ja) 1976-07-27
FR2294489B1 (ja) 1977-04-08
NL7514441A (nl) 1976-06-15
DE2556151C2 (ja) 1987-05-07
US4051381A (en) 1977-09-27
SE403412B (sv) 1978-08-14
GB1529819A (en) 1978-10-25
SE7514083L (sv) 1976-06-14
DE2556151A1 (de) 1976-06-16
FR2294489A1 (fr) 1976-07-09

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