JPS61121753U - - Google Patents

Info

Publication number
JPS61121753U
JPS61121753U JP408485U JP408485U JPS61121753U JP S61121753 U JPS61121753 U JP S61121753U JP 408485 U JP408485 U JP 408485U JP 408485 U JP408485 U JP 408485U JP S61121753 U JPS61121753 U JP S61121753U
Authority
JP
Japan
Prior art keywords
semiconductor chip
pad
semiconductor device
power supply
formation region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP408485U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP408485U priority Critical patent/JPS61121753U/ja
Publication of JPS61121753U publication Critical patent/JPS61121753U/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Description

【図面の簡単な説明】[Brief explanation of drawings]

第1図A,Bは本考案の実施例の半導体装置の
平面図と電圧特性を示すグラフ図、第2図A,B
は従来の半導体装置の平面図と電圧特性を示すグ
ラフ図、第3図は本考案の実施例の半導体装置の
平面図である。 1,11,21……半導体チツプ、2,13,
14,26,27,28……素子形成領域、3,
12,22……電源パツド(ボンデイングパツド
)、ΔV……電圧降下、29……信号用パツド。
Figures 1A and B are a plan view and graphs showing voltage characteristics of a semiconductor device according to an embodiment of the present invention, and Figures 2A and B are graphs showing voltage characteristics.
3 is a plan view of a conventional semiconductor device and a graph showing voltage characteristics, and FIG. 3 is a plan view of a semiconductor device according to an embodiment of the present invention. 1, 11, 21... semiconductor chip, 2, 13,
14, 26, 27, 28...element formation region, 3,
12, 22... Power supply pad (bonding pad), ΔV... Voltage drop, 29... Signal pad.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 半導体チツプに集積回路を作成して成る半導体
装置において、該半導体チツプの外周部に信号パ
ツドを配置し、該半導体チツプの素子形成領域の
内部に電源パツドを配置したことを特徴とする半
導体装置。
1. A semiconductor device comprising an integrated circuit formed on a semiconductor chip, characterized in that a signal pad is arranged on the outer periphery of the semiconductor chip, and a power supply pad is arranged inside an element formation region of the semiconductor chip.
JP408485U 1985-01-18 1985-01-18 Pending JPS61121753U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP408485U JPS61121753U (en) 1985-01-18 1985-01-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP408485U JPS61121753U (en) 1985-01-18 1985-01-18

Publications (1)

Publication Number Publication Date
JPS61121753U true JPS61121753U (en) 1986-07-31

Family

ID=30479314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP408485U Pending JPS61121753U (en) 1985-01-18 1985-01-18

Country Status (1)

Country Link
JP (1) JPS61121753U (en)

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