JPS61116893A - 半導体レ−ザ - Google Patents
半導体レ−ザInfo
- Publication number
- JPS61116893A JPS61116893A JP23902484A JP23902484A JPS61116893A JP S61116893 A JPS61116893 A JP S61116893A JP 23902484 A JP23902484 A JP 23902484A JP 23902484 A JP23902484 A JP 23902484A JP S61116893 A JPS61116893 A JP S61116893A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- inp
- type
- semiconductor laser
- gainasp
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000005253 cladding Methods 0.000 claims description 16
- 238000010521 absorption reaction Methods 0.000 claims description 9
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 1
- 230000006866 deterioration Effects 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 description 7
- 239000007791 liquid phase Substances 0.000 description 7
- 101150054880 NASP gene Proteins 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23902484A JPS61116893A (ja) | 1984-11-13 | 1984-11-13 | 半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23902484A JPS61116893A (ja) | 1984-11-13 | 1984-11-13 | 半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61116893A true JPS61116893A (ja) | 1986-06-04 |
| JPH0156553B2 JPH0156553B2 (cg-RX-API-DMAC7.html) | 1989-11-30 |
Family
ID=17038746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23902484A Granted JPS61116893A (ja) | 1984-11-13 | 1984-11-13 | 半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61116893A (cg-RX-API-DMAC7.html) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59124184A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | 半導体発光装置 |
-
1984
- 1984-11-13 JP JP23902484A patent/JPS61116893A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59124184A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | 半導体発光装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0156553B2 (cg-RX-API-DMAC7.html) | 1989-11-30 |
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