JPS61116866A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS61116866A
JPS61116866A JP59238903A JP23890384A JPS61116866A JP S61116866 A JPS61116866 A JP S61116866A JP 59238903 A JP59238903 A JP 59238903A JP 23890384 A JP23890384 A JP 23890384A JP S61116866 A JPS61116866 A JP S61116866A
Authority
JP
Japan
Prior art keywords
substrate
potential
diffusion layer
integrated circuit
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59238903A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0374036B2 (enExample
Inventor
Kiyonobu Hinooka
日野岡　清伸
Kenji Shiraki
白木　賢二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP59238903A priority Critical patent/JPS61116866A/ja
Publication of JPS61116866A publication Critical patent/JPS61116866A/ja
Publication of JPH0374036B2 publication Critical patent/JPH0374036B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/854—Complementary IGFETs, e.g. CMOS comprising arrangements for preventing bipolar actions between the different IGFET regions, e.g. arrangements for latchup prevention

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59238903A 1984-11-13 1984-11-13 半導体集積回路装置 Granted JPS61116866A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59238903A JPS61116866A (ja) 1984-11-13 1984-11-13 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59238903A JPS61116866A (ja) 1984-11-13 1984-11-13 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS61116866A true JPS61116866A (ja) 1986-06-04
JPH0374036B2 JPH0374036B2 (enExample) 1991-11-25

Family

ID=17036980

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59238903A Granted JPS61116866A (ja) 1984-11-13 1984-11-13 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS61116866A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63287053A (ja) * 1987-05-19 1988-11-24 Nec Corp 半導体集積回路装置
JPS63318767A (ja) * 1987-06-22 1988-12-27 Nec Corp 相補型半導体集積回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848960A (ja) * 1982-09-03 1983-03-23 Hitachi Ltd 半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5848960A (ja) * 1982-09-03 1983-03-23 Hitachi Ltd 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63287053A (ja) * 1987-05-19 1988-11-24 Nec Corp 半導体集積回路装置
JPS63318767A (ja) * 1987-06-22 1988-12-27 Nec Corp 相補型半導体集積回路

Also Published As

Publication number Publication date
JPH0374036B2 (enExample) 1991-11-25

Similar Documents

Publication Publication Date Title
EP0032046B1 (en) Circuitry for protecting a semiconductor device against static electricity
KR0159451B1 (ko) 반도체장치의 보호회로
JPH02119262A (ja) 半導体装置
KR100222078B1 (ko) 최소면적에 형성되는 정전기 보호 회로
GB2334633A (en) Low leakage electrostatic discharge protection system
EP0348017B1 (en) Semiconductor integrated-circuit apparatus
KR100194496B1 (ko) 반도체 장치
JPS61116866A (ja) 半導体集積回路装置
JP3499578B2 (ja) 半導体集積回路
US6084272A (en) Electrostatic discharge protective circuit for semiconductor device
US6972462B2 (en) Compact high voltage ESD protection diode
JPH0494161A (ja) 集積回路用入出力保護装置
US5880514A (en) Protection circuit for semiconductor device
JPH01214055A (ja) 静電破壊保護装置
JPH0374509B2 (enExample)
JP3211871B2 (ja) 入出力保護回路
JPS6239045A (ja) 半導体集積回路の入力保護回路
JPS63287053A (ja) 半導体集積回路装置
US5384482A (en) Semiconductor integrated circuit device having input protective circuit
JPS63301555A (ja) 半導体装置
KR100494143B1 (ko) 반도체장치의 필드트랜지스터 구조
JP3070095B2 (ja) 入出力保護回路
JPS60254651A (ja) Ｃｍｏｓ回路の入力保護回路
JPH0243343B2 (enExample)
JPS61102766A (ja) 半導体集積回路