JPS61113249A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61113249A
JPS61113249A JP59235677A JP23567784A JPS61113249A JP S61113249 A JPS61113249 A JP S61113249A JP 59235677 A JP59235677 A JP 59235677A JP 23567784 A JP23567784 A JP 23567784A JP S61113249 A JPS61113249 A JP S61113249A
Authority
JP
Japan
Prior art keywords
electrode
gate
control electrode
contact
main
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59235677A
Other languages
English (en)
Japanese (ja)
Other versions
JPH039622B2 (cg-RX-API-DMAC10.html
Inventor
Takeshi Ito
武志 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59235677A priority Critical patent/JPS61113249A/ja
Priority to DE3538815A priority patent/DE3538815C3/de
Priority to FR858516575A priority patent/FR2572852B1/fr
Publication of JPS61113249A publication Critical patent/JPS61113249A/ja
Publication of JPH039622B2 publication Critical patent/JPH039622B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W72/00
    • H10W20/484
    • H10W76/138
    • H10W72/07553
    • H10W72/531
    • H10W72/536
    • H10W72/5524
    • H10W72/884
    • H10W74/00

Landscapes

  • Die Bonding (AREA)
  • Thyristors (AREA)
JP59235677A 1984-11-08 1984-11-08 半導体装置 Granted JPS61113249A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP59235677A JPS61113249A (ja) 1984-11-08 1984-11-08 半導体装置
DE3538815A DE3538815C3 (de) 1984-11-08 1985-10-31 Halbleiterbauelement
FR858516575A FR2572852B1 (fr) 1984-11-08 1985-11-08 Dispositif semi-conducteur en particulier thyristor comportant une electrode d'acces a l'electrode de commande

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59235677A JPS61113249A (ja) 1984-11-08 1984-11-08 半導体装置

Publications (2)

Publication Number Publication Date
JPS61113249A true JPS61113249A (ja) 1986-05-31
JPH039622B2 JPH039622B2 (cg-RX-API-DMAC10.html) 1991-02-08

Family

ID=16989566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59235677A Granted JPS61113249A (ja) 1984-11-08 1984-11-08 半導体装置

Country Status (3)

Country Link
JP (1) JPS61113249A (cg-RX-API-DMAC10.html)
DE (1) DE3538815C3 (cg-RX-API-DMAC10.html)
FR (1) FR2572852B1 (cg-RX-API-DMAC10.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4227063A1 (de) * 1992-08-15 1994-02-17 Abb Research Ltd Abschaltbares Hochleistungs-Halbleiterbauelement
US5539232A (en) * 1994-05-31 1996-07-23 Kabushiki Kaisha Toshiba MOS composite type semiconductor device
DE19505387A1 (de) * 1995-02-17 1996-08-22 Abb Management Ag Druckkontaktgehäuse für Halbleiterbauelemente
DE19530264A1 (de) * 1995-08-17 1997-02-20 Abb Management Ag Leistungshalbleitermodul

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3559001A (en) * 1968-08-21 1971-01-26 Motorola Inc Semiconductor housing assembly
US3992717A (en) * 1974-06-21 1976-11-16 Westinghouse Electric Corporation Housing for a compression bonded encapsulation of a semiconductor device
FR2440077A1 (fr) * 1978-10-23 1980-05-23 Transformation En Cie Indle Conteneur pour composant electronique de puissance a semi-conducteur et son procede de fabrication
JPS56131955A (en) * 1980-09-01 1981-10-15 Hitachi Ltd Semiconductor device
JPS58148433A (ja) * 1982-02-26 1983-09-03 Mitsubishi Electric Corp 半導体装置
JPS60150670A (ja) * 1984-01-17 1985-08-08 Mitsubishi Electric Corp 半導体装置
JPS60194565A (ja) * 1984-03-15 1985-10-03 Mitsubishi Electric Corp 半導体装置

Also Published As

Publication number Publication date
DE3538815C3 (de) 1994-04-14
DE3538815A1 (de) 1986-05-15
FR2572852B1 (fr) 1990-10-05
JPH039622B2 (cg-RX-API-DMAC10.html) 1991-02-08
FR2572852A1 (fr) 1986-05-09
DE3538815C2 (cg-RX-API-DMAC10.html) 1994-04-14

Similar Documents

Publication Publication Date Title
US4719500A (en) Semiconductor device and a process of producing same
US8030749B2 (en) Semiconductor device
US4542398A (en) Semiconductor devices of multi-emitter type
US5047833A (en) Solderable front metal contact for MOS devices
JPH0799766B2 (ja) 半導体素子
US3736474A (en) Solderless semiconductor devices
US6452281B1 (en) Semiconductor integrated circuit and fabrication process therefor
US5141148A (en) Method of anodic bonding a semiconductor wafer to an insulator
US4374393A (en) Light triggered thyristor device
EP0051459B1 (en) A semiconductor device having electrodes and conducting members bonded to the electrodes, and a method of manufacturing the same
JPS61113249A (ja) 半導体装置
GB2095904B (en) Semiconductor device with built-up low resistance contact and laterally conducting second contact
US3604989A (en) Structure for rigidly mounting a semiconductor chip on a lead-out base plate
US11350492B2 (en) Sample holder
KR100934827B1 (ko) 처리 장치용 워크피스 지지체 및 이를 사용하는 처리 장치
US2959718A (en) Rectifier assembly
JPS6159742A (ja) 半導体装置
JPS624330A (ja) 半導体装置
JP3375812B2 (ja) 圧接型半導体装置及び半導体素子
JPS63255924A (ja) 半導体素子
US3368121A (en) Semiconductor thyristor of pnpn type
JPH0251275A (ja) 制御半導体装置
JPS6127901B2 (cg-RX-API-DMAC10.html)
KR100198993B1 (ko) 반도체 패키지공정 및 패키지장치
JPS63173363A (ja) 半導体装置