JPS61108162A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法

Info

Publication number
JPS61108162A
JPS61108162A JP59231607A JP23160784A JPS61108162A JP S61108162 A JPS61108162 A JP S61108162A JP 59231607 A JP59231607 A JP 59231607A JP 23160784 A JP23160784 A JP 23160784A JP S61108162 A JPS61108162 A JP S61108162A
Authority
JP
Japan
Prior art keywords
region
film
base
collector
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59231607A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0436576B2 (enrdf_load_stackoverflow
Inventor
Koji Eguchi
江口　剛治
Tatsuhiko Ikeda
龍彦 池田
Kiyoshi Sakagami
阪上　潔
Tadashi Hirao
正 平尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP59231607A priority Critical patent/JPS61108162A/ja
Publication of JPS61108162A publication Critical patent/JPS61108162A/ja
Publication of JPH0436576B2 publication Critical patent/JPH0436576B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP59231607A 1984-10-31 1984-10-31 半導体装置およびその製造方法 Granted JPS61108162A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59231607A JPS61108162A (ja) 1984-10-31 1984-10-31 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59231607A JPS61108162A (ja) 1984-10-31 1984-10-31 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS61108162A true JPS61108162A (ja) 1986-05-26
JPH0436576B2 JPH0436576B2 (enrdf_load_stackoverflow) 1992-06-16

Family

ID=16926160

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59231607A Granted JPS61108162A (ja) 1984-10-31 1984-10-31 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JPS61108162A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393151A (ja) * 1986-10-07 1988-04-23 Toshiba Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6393151A (ja) * 1986-10-07 1988-04-23 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
JPH0436576B2 (enrdf_load_stackoverflow) 1992-06-16

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