JPS611049A - Manufacture of solid-stage image sensor - Google Patents
Manufacture of solid-stage image sensorInfo
- Publication number
- JPS611049A JPS611049A JP59119764A JP11976484A JPS611049A JP S611049 A JPS611049 A JP S611049A JP 59119764 A JP59119764 A JP 59119764A JP 11976484 A JP11976484 A JP 11976484A JP S611049 A JPS611049 A JP S611049A
- Authority
- JP
- Japan
- Prior art keywords
- film
- image sensor
- etched
- metal film
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 238000005530 etching Methods 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 238000003384 imaging method Methods 0.000 claims 1
- 230000003449 preventive effect Effects 0.000 abstract 3
- 238000000034 method Methods 0.000 description 13
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 12
- 230000003667 anti-reflective effect Effects 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- XMPZTFVPEKAKFH-UHFFFAOYSA-P ceric ammonium nitrate Chemical compound [NH4+].[NH4+].[Ce+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O XMPZTFVPEKAKFH-UHFFFAOYSA-P 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000000428 dust Substances 0.000 description 5
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は新規な固体撮像素子の製造方法に関する。より
詳しくは配線用ないしは遮光用の金属膜の表面に形成さ
れた反射防止膜の窓開部への庇状の突出部がダストとな
るのを未然に防止し、信頼度の高い固体撮像素子を得る
ことのできる新規な固体撮像素子の製造方法を提供しよ
うとするものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a novel solid-state image sensor. More specifically, the anti-reflection film formed on the surface of the metal film for wiring or light shielding prevents dust from forming on the eaves-like protrusion into the window opening, thereby creating a highly reliable solid-state image sensor. The present invention aims to provide a method for manufacturing a novel solid-state image sensor that can be obtained.
背景技術とその問題点
第２図は固体撮像素子の構造を大まかに示すものである
。同図において、ａは半導体基板で、その表面部に光セ
ンサｂ及び垂直転送レジスタＣその他必要な各種領域（
図示しない）が形成され、その半導体基板ａの表面上に
遮光膜ｅが埋設された透明な絶縁膜ｄが形成されている
。遮光膜ｅは光センサｂ以外の領域、特に垂直転送レジ
スタＣに光が入射するのを防止するために形成されるも
のであり、アルミニウム等の金属からなる。又、半導体
基板の表面上には図示はしないがアルミニウム等からな
る配線膜も形成される。ところで。Background Art and Its Problems FIG. 2 roughly shows the structure of a solid-state image sensor. In the figure, a is a semiconductor substrate, on the surface of which are optical sensors b, vertical transfer registers C, and other necessary areas (
(not shown) is formed, and a transparent insulating film d in which a light shielding film e is embedded is formed on the surface of the semiconductor substrate a. The light shielding film e is formed to prevent light from entering the area other than the optical sensor b, particularly the vertical transfer register C, and is made of metal such as aluminum. Further, although not shown, a wiring film made of aluminum or the like is also formed on the surface of the semiconductor substrate. by the way.
配線用ないしは遮光用の金属膜（例えばアルミニウム膜
）は反射率が高いためそこに入射°された光のほとんど
が反射され、そして反射された光が例えば透明な絶縁膜
ｄ等にて内面反射され、光センサｂに入射されてしまう
という現象が生じる。このように配線用ないしは遮光用
の金属膜に入射された光が反射の繰返しによって光セン
サｂに入射されるとノイズが発生し、画質が低下する。Metal films for wiring or light shielding (for example, aluminum films) have a high reflectance, so most of the light incident thereon is reflected, and the reflected light is internally reflected by, for example, a transparent insulating film. , a phenomenon occurs in which the light is incident on the optical sensor b. If the light incident on the metal film for wiring or light shielding is repeatedly reflected and incident on the optical sensor b in this way, noise is generated and the image quality is degraded.
そこで、配線用ないしは遮光用の金属膜表面の反射率を
低くするため各種の試みが為されている。そのうちの一
つとして金属膜表面にＣｒ２Ｏ３等の金属酸化物からな
る反射防止膜を形成する試みがある。第３図（Ａ）乃至
（Ｄ）は反射防止膜が表面上に形成された配線用ないし
は遮光用の金属膜を形成する方法を工程順に示すもので
あり、この図に従ってその方法を具体的に説明する。Therefore, various attempts have been made to lower the reflectance of the surface of a metal film for wiring or light shielding. One such attempt is to form an antireflection film made of a metal oxide such as Cr2O3 on the surface of a metal film. Figures 3 (A) to (D) show the method of forming a metal film for wiring or light shielding on the surface of which an anti-reflection film is formed in the order of steps. explain.
（Ａ）同図（Ａ）に示すように、撮像素子が形成された
半導体基板１表面にアルミニウムＡｔからなる遮光用（
あるいは配線用）金属膜（膜厚約４０００人）２を前面
的に形成し、該金属膜２表面上にＣｒ ２’０３からな
る反射防止膜（膜厚５００〜１００ＯＡ）３を形成する
。(A) As shown in FIG.
Alternatively, a metal film (for wiring) (film thickness: approximately 4,000 OA) 2 is formed on the front surface, and an antireflection film (film thickness: 500 to 100 OA) 3 made of Cr 2'03 is formed on the surface of the metal film 2.
尚、半導体基板１表面部に形成された撮像素子の各領域
は図示を省略する。Note that each region of the image sensor formed on the surface portion of the semiconductor substrate 1 is omitted from illustration.
（Ｂ）次に、同図（Ｂ）に示すように、反射防止ＢＩＪ
３の表面上に所定のパターンを有するレジスト膜４を形
成する。このレジスト膜４は光センサと対応する位置に
窓開部５が存在するようなパターンを有、する。(B) Next, as shown in the same figure (B), anti-reflection BIJ
A resist film 4 having a predetermined pattern is formed on the surface of the resist film 3 . This resist film 4 has a pattern in which window openings 5 are present at positions corresponding to the optical sensors.
（Ｃ）次にレジストｎり４をマスクとしてＣｒ２Ｏ３か
らなる反射防止膜をエツチングする。該エツチングはエ
ツチング液として例えば硝酸第２セリウムアンモニウム
溶液を用い、該エツチング液に半導体基板１を浸漬する
ことにより行う。(C) Next, the antireflection film made of Cr2O3 is etched using the resist layer 4 as a mask. The etching is performed by using, for example, a ceric ammonium nitrate solution as an etching solution, and by immersing the semiconductor substrate 1 in the etching solution.
その後、レジスト膜４をマスクとしてアルミニウムＡｔ
からなる金属膜２をエツチングする。該エツチングはエ
ツチング液として例えばリン酸等り
を用い、該エツチング液に半導体基板ｌを浸漬すること
により行う。同図（Ｃ）はそのエツチングの終了後の状
態を示す。After that, using the resist film 4 as a mask, aluminum
The metal film 2 consisting of is etched. The etching is performed by using, for example, phosphoric acid as an etching solution and by immersing the semiconductor substrate 1 in the etching solution. FIG. 6(C) shows the state after the etching is completed.
（Ｄ）その後、同図（Ｄ）に示すように不要なレジスト
膜４を除去する。(D) After that, unnecessary resist film 4 is removed as shown in FIG. 4(D).
ところで、このような方法によれば、反射防止膜３から
なる窓開部５への庇状の突出部６が形成されてしまう。By the way, according to such a method, an eave-like protrusion 6 is formed toward the window opening 5 made of the antireflection film 3.
これはアルミニウムからなる金属膜２に対するエツチン
グによってＣｒ２Ｏ３も僅かながらエツチングされてし
まうことに起因する。そして、この庇状の突出部６はレ
ジスト膜４の剥離工程あるいはその後の各工程において
折れてダスト６′になり、不良発生の原因となる惧れが
あった。This is because Cr2O3 is also slightly etched when the metal film 2 made of aluminum is etched. There is a fear that this eave-like protrusion 6 may break off during the process of stripping the resist film 4 or in each subsequent process and become dust 6', causing defects.
発明の目的
しかして１本発明は、配線用ないしは遮光用の金属膜の
表面に形成された反射防止膜の窓開部への庇状の突出部
がダストとなるのを未然に防止し、信頼度の高い固体撮
像素子を得ることのできる新規な固体撮像素子の製造方
法を提供しようとするものである。Purpose of the InventionThe present invention prevents the eaves-like protrusion into the window opening of an antireflection film formed on the surface of a metal film for wiring or light shielding from becoming dust, and improves reliability. The present invention aims to provide a novel method for manufacturing a solid-state image sensor that can obtain a high-quality solid-state image sensor.
発明の概要
上記目的を達成するため本発明固体撮像素子の製造方法
は、撮像素子が形成された半導体基板表面上に配線用な
いしは遮光用の金属膜を全面的に形成した後該金属膜表
面上に反射防止膜を全面的に形成し、次いで、該反射防
止膜の表面上に選択的にレジストＭを形成し、該レジス
ト膜をマスクとして反射防止膜をエツチングし、次いで
該エツチングの後に残存する反射防止膜をマスクとして
前記金属膜をエツチングし、その後半導体基板を前記反
射防止膜に対するエツチング液に浸漬することにより前
記金属膜に対するエツチングにより生じたところの各窓
開部への反射防止膜からなる庇状の突出部を除去するこ
とを特徴とするものである。SUMMARY OF THE INVENTION In order to achieve the above object, the method for manufacturing a solid-state image sensor of the present invention includes forming a metal film for wiring or light shielding over the entire surface of a semiconductor substrate on which an image sensor is formed, and then forming a metal film on the surface of the metal film. An anti-reflective film is formed on the entire surface, then a resist M is selectively formed on the surface of the anti-reflective film, the anti-reflective film is etched using the resist film as a mask, and then the anti-reflective film remaining after the etching is etched. The metal film is etched using the anti-reflection film as a mask, and the semiconductor substrate is then immersed in an etching solution for the anti-reflection film, thereby forming an anti-reflection film on each window opening created by etching the metal film. The feature is that the eave-like protrusion is removed.
実施例
以下に、本発明固体撮像素子の製造方法を添附図面に示
した実施例に従って詳細に説明する。EXAMPLES Below, a method for manufacturing a solid-state image sensor according to the present invention will be explained in detail according to examples shown in the accompanying drawings.
第１図（Ａ）乃至（Ｅ）は本発明固体撮像素子の製造方
法の実施の一例を工程順に示す断面図である。FIGS. 1A to 1E are cross-sectional views showing an example of the method for manufacturing a solid-state image sensor of the present invention in order of steps.
（Ａ）同図（Ａ）に示すように、撮像素子が形成された
半導体基板１表面にアルミニウムＡ１からなる遮光用（
あるいは配線用）金属膜（膜厚的４００ＯＡ）２を全面
的に形成し、該金属膜２表面上にＣｒ ２０３からなる
反射防止膜（膜厚５００〜１０００人）３を形成する。(A) As shown in FIG.
Alternatively, a metal film (for wiring) (400 OA in film thickness) 2 is formed over the entire surface, and an antireflection film (500 to 1000 OA in film thickness) 3 made of Cr 203 is formed on the surface of the metal film 2.
尚、半導体基板１表面部に形成された撮像素子の各領域
は図示を省略する。Note that each region of the image sensor formed on the surface portion of the semiconductor substrate 1 is omitted from illustration.
（Ｂ）次に、同図（Ｂ）に示すように、反射防止膜３の
表面上に所定のパターンを看するレジスト膜４を形成す
る。このレジスト膜４は光センサと対応する位置に窓開
部５が存在するようなパターンを有する。(B) Next, as shown in FIG. 3B, a resist film 4 having a predetermined pattern is formed on the surface of the antireflection film 3. This resist film 4 has a pattern in which window openings 5 are present at positions corresponding to the optical sensors.
（Ｃ）次にレジスト膜４をマスクとしてＣｒ２Ｏ３から
なる反射防止膜をエツチングする。該エツチングはエツ
チング液として例えば硝酸第２セリウムアンモニウム溶
液を用い、該エツチング液に半導体基板ｌを浸漬するこ
とにより行う。(C) Next, the antireflection film made of Cr2O3 is etched using the resist film 4 as a mask. The etching is performed by using, for example, a ceric ammonium nitrate solution as an etching solution, and by immersing the semiconductor substrate 1 in the etching solution.
その後、レジスト膜４をマスクとしてアルミニウムＡｔ
からなる金属膜２をエツチングする。該エツチングはエ
ツチング液として例えばリン酸等を用い、該エツチング
液に半導体基板１を浸漬することにより行う。同図（Ｃ
）はそのエツチングの終了後の状態を示す。すると、前
述のとおり、反射防止膜の窓開部５へ庇状に突出する突
出部６が形成されてしまう。After that, using the resist film 4 as a mask, aluminum
The metal film 2 consisting of is etched. The etching is performed by using, for example, phosphoric acid as an etching solution and immersing the semiconductor substrate 1 in the etching solution. The same figure (C
) indicates the state after the etching is completed. Then, as described above, a protrusion 6 is formed that protrudes like an eave into the window opening 5 of the antireflection film.
（Ｄ）次に、第１図（Ｃ）に示す状態の半導体基 。(D) Next, the semiconductor substrate in the state shown in FIG. 1(C).
板１をＣｒ２Ｏ３のエツチング液である硝酸第２セリウ
ムアンモニウム溶液に浸漬して突出部６をエツチング除
去する。第１図ＣＤ）はその突出部６のエツチング除去
後における状ＩＥを示す。The plate 1 is immersed in a ceric ammonium nitrate solution, which is a Cr2O3 etching solution, to remove the protrusion 6 by etching. FIG. 1CD) shows the state IE after the protrusion 6 has been etched away.
（Ｅ）その後、レジスト膜４を除去する。(E) After that, the resist film 4 is removed.
このような第１図（Ａ）乃至（Ｅ）に示す固体撮像素子
の製造方法によれば、表面に反射防止膜３が形成された
金属膜２に対するエツチングが終了すると、そのエツチ
ングの際に生じた窓開部５へ庇状に突出する反射防止膜
３の突出部６をそれを形成するＣｒ２Ｏ３に対するエツ
チング液により除去するので、その後のレジスト膜４を
剥離する工程その他の工程で突出部６が折れてダストと
なるという惧れがなくなる。従って、固体撮像素子の信
頼度が高くなる。According to the method of manufacturing the solid-state image sensor shown in FIGS. 1A to 1E, when the etching of the metal film 2 on which the antireflection film 3 is formed is completed, the etching process that occurs during etching is completed. Since the protrusion 6 of the antireflection film 3 that protrudes like an eave into the window opening 5 is removed using an etching solution for Cr2O3 that forms it, the protrusion 6 will not be removed in the subsequent step of peeling off the resist film 4 and other steps. There is no need to worry about it breaking and turning into dust. Therefore, the reliability of the solid-state image sensor is increased.
発明の効果
以上に述べたように、本発明固体撮像素子の製造方法は
、撮像素子が形成された半導体基板表面上に配線用ない
しは遮光用の金属膜を全面的に形成した後該金属膜表面
上に反射防止膜を全面的に形成し、次いで、該反射防止
膜の表面上に選択的にレジスト膜を形成し、該レジスト
膜をマスクとして反射防止膜をエツチングし、次いで該
エツチングの後に存する反射防止膜をマスクとして前記
金属膜をエツチングし、その後半導体基板を前記反射防
止膜に対するエツチング液に浸漬することにより前記金
属膜に対するエツチングにより生じたところの各窓開部
への反射防止膜からなる庇状の突出部を除去することを
特徴とするものである。Effects of the Invention As described above, the method for manufacturing a solid-state image sensor of the present invention includes forming a metal film for wiring or light shielding over the entire surface of a semiconductor substrate on which an image sensor is formed, and then forming a metal film on the surface of the metal film. An anti-reflective film is formed on the entire surface, then a resist film is selectively formed on the surface of the anti-reflective film, the anti-reflective film is etched using the resist film as a mask, and then, after the etching, the anti-reflective film is etched. The metal film is etched using the anti-reflection film as a mask, and the semiconductor substrate is then immersed in an etching solution for the anti-reflection film, thereby forming an anti-reflection film on each window opening created by etching the metal film. The feature is that the eave-like protrusion is removed.
従って、本発明によれば、各窓開部への反射防止膜から
なる庇状の突出部が除去されるので、その突出部が折れ
てダストとなる惧れがなくなる。Therefore, according to the present invention, since the eave-like protrusion made of the antireflection film extending to each window opening is removed, there is no risk that the protrusion will break and become dust.
依って、固体撮像素子の信頼度を高め、又、歩留りを向
上することができる。Therefore, the reliability of the solid-state image sensor can be increased and the yield can be improved.
第１図（Ａ）乃至（Ｅ）は本発明固体撮像素子の製造方
法の実施の一例を工程順に示す断面図、第２図は固体撮
像素子の構造を大まかに示す断面図、第３図（Ａ）乃至
（Ｄ）は従来試みられた金属膜及び反射防止膜の形成方
法を工程順に示す断面図である。
符号の説明
ｌｅｅ・半導体基板、 ２・・・金属膜、３・φφ反
射防止膜、 ４・・Φレジスト膜、５ｅφ・窓開部、
６・・・突出部
第１図
ＣＡ＞
ＣＢ＞
（Ｃ）
第１図
（Ｄ）
（Ｅ）
ら
第２図1A to 1E are cross-sectional views showing an example of the method for manufacturing a solid-state image sensor of the present invention in the order of steps, FIG. 2 is a cross-sectional view roughly showing the structure of the solid-state image sensor, and FIG. A) to (D) are cross-sectional views showing conventional methods of forming a metal film and an antireflection film in the order of steps. Explanation of symbols: lee・semiconductor substrate, 2・metal film, 3・φφ antireflection film, 4・φresist film, 5eφ・window opening,
6...Protrusion part Fig. 1 CA>CB> (C) Fig. 1 (D) (E) et al. Fig. 2
Claims (1)
ないしは遮光用の金属膜を全面的に形成した後該金属膜
表面上に反射防止膜を全面的に形成し、次いで、該反射
防止膜の表面上に選択的にレジスト膜を形成し、該レジ
スト膜をマスクとして反射防止膜をエッチングし、次い
で該エッチングの後に残存する反射防止膜をマスクとし
て前記金属膜をエッチングし、その後半導体基板を前記
反射防止膜に対するエッチング液に浸漬することにより
前記金属膜に対するエッチングにより生じたところの各
窓開部への反射防止膜からなる庇状の突出部を除去する
ことを特徴とする固体撮像素子の製造方法(1) After forming a metal film for wiring or light shielding on the entire surface of the semiconductor substrate on which the image sensor is formed, an anti-reflection film is formed on the entire surface of the metal film, and then the anti-reflection film is formed on the entire surface of the metal film. A resist film is selectively formed on the surface of the film, the anti-reflection film is etched using the resist film as a mask, the metal film is etched using the anti-reflection film remaining after the etching as a mask, and then the semiconductor substrate is etched. A solid-state imaging device characterized in that an eave-like protrusion made of the anti-reflection film at each window opening, which is generated by etching the metal film, is removed by immersing the device in an etching solution for the anti-reflection film. manufacturing method
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59119764A JPS611049A (en) | 1984-06-13 | 1984-06-13 | Manufacture of solid-stage image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59119764A JPS611049A (en) | 1984-06-13 | 1984-06-13 | Manufacture of solid-stage image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS611049A true JPS611049A (en) | 1986-01-07 |
Family
ID=14769600
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59119764A Pending JPS611049A (en) | 1984-06-13 | 1984-06-13 | Manufacture of solid-stage image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS611049A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006301101A (en) * | 2005-04-18 | 2006-11-02 | Fujifilm Electronic Materials Co Ltd | Light-shielding/antireflection multilayer film, method for forming the same, solid-state imaging element having the same, and manufacturing method therefor |
| JPWO2006046502A1 (en) * | 2004-10-27 | 2008-05-22 | 株式会社ニコン | Optical element manufacturing method, optical element, Nippon disk, confocal optical system, and three-dimensional measuring apparatus |
-
1984
- 1984-06-13 JP JP59119764A patent/JPS611049A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006046502A1 (en) * | 2004-10-27 | 2008-05-22 | 株式会社ニコン | Optical element manufacturing method, optical element, Nippon disk, confocal optical system, and three-dimensional measuring apparatus |
| JP4797990B2 (en) * | 2004-10-27 | 2011-10-19 | 株式会社ニコン | Optical element manufacturing method, optical element, Nippon disk, confocal optical system, and three-dimensional measuring apparatus |
| JP2006301101A (en) * | 2005-04-18 | 2006-11-02 | Fujifilm Electronic Materials Co Ltd | Light-shielding/antireflection multilayer film, method for forming the same, solid-state imaging element having the same, and manufacturing method therefor |
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