JPS6097676A - 半導体圧力センサ及びその製造方法 - Google Patents

半導体圧力センサ及びその製造方法

Info

Publication number
JPS6097676A
JPS6097676A JP58206334A JP20633483A JPS6097676A JP S6097676 A JPS6097676 A JP S6097676A JP 58206334 A JP58206334 A JP 58206334A JP 20633483 A JP20633483 A JP 20633483A JP S6097676 A JPS6097676 A JP S6097676A
Authority
JP
Japan
Prior art keywords
pressure sensor
diaphragm
silicon
semiconductor pressure
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58206334A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0510830B2 (enrdf_load_stackoverflow
Inventor
Katsunori Nishiguchi
勝規 西口
Junichi Hiramoto
順一 平本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP58206334A priority Critical patent/JPS6097676A/ja
Publication of JPS6097676A publication Critical patent/JPS6097676A/ja
Publication of JPH0510830B2 publication Critical patent/JPH0510830B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Pressure Sensors (AREA)
JP58206334A 1983-11-01 1983-11-01 半導体圧力センサ及びその製造方法 Granted JPS6097676A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58206334A JPS6097676A (ja) 1983-11-01 1983-11-01 半導体圧力センサ及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58206334A JPS6097676A (ja) 1983-11-01 1983-11-01 半導体圧力センサ及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6097676A true JPS6097676A (ja) 1985-05-31
JPH0510830B2 JPH0510830B2 (enrdf_load_stackoverflow) 1993-02-10

Family

ID=16521576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58206334A Granted JPS6097676A (ja) 1983-11-01 1983-11-01 半導体圧力センサ及びその製造方法

Country Status (1)

Country Link
JP (1) JPS6097676A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5107309A (en) * 1989-12-18 1992-04-21 Honeywell Inc. Double diffused leadout for a semiconductor device
US5181417A (en) * 1989-07-10 1993-01-26 Nippon Soken, Inc. Pressure detecting device
US5302933A (en) * 1991-09-27 1994-04-12 Terumo Kabushiki Kaisha Infrared sensor
US5382823A (en) * 1990-11-27 1995-01-17 Terumo Kabushiki Kaisha Semiconductor device and method for production thereof
US5404125A (en) * 1991-07-19 1995-04-04 Terumo Kabushiki Kaisha Infrared radiation sensor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206335A (ja) * 1982-05-18 1983-12-01 ガ−バ−・サイエンテイフイツク・プロダクツ・インコ−ポレ−テツド 真空ワ−クピ−スホルダ−
JPS59169184A (ja) * 1983-03-16 1984-09-25 Nec Corp 圧力センサの製造方法
JPS59172778A (ja) * 1983-03-22 1984-09-29 Nec Corp 圧力センサの製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58206335A (ja) * 1982-05-18 1983-12-01 ガ−バ−・サイエンテイフイツク・プロダクツ・インコ−ポレ−テツド 真空ワ−クピ−スホルダ−
JPS59169184A (ja) * 1983-03-16 1984-09-25 Nec Corp 圧力センサの製造方法
JPS59172778A (ja) * 1983-03-22 1984-09-29 Nec Corp 圧力センサの製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181417A (en) * 1989-07-10 1993-01-26 Nippon Soken, Inc. Pressure detecting device
US5107309A (en) * 1989-12-18 1992-04-21 Honeywell Inc. Double diffused leadout for a semiconductor device
US5382823A (en) * 1990-11-27 1995-01-17 Terumo Kabushiki Kaisha Semiconductor device and method for production thereof
US5404125A (en) * 1991-07-19 1995-04-04 Terumo Kabushiki Kaisha Infrared radiation sensor
US5302933A (en) * 1991-09-27 1994-04-12 Terumo Kabushiki Kaisha Infrared sensor

Also Published As

Publication number Publication date
JPH0510830B2 (enrdf_load_stackoverflow) 1993-02-10

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