JPS6091631A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6091631A
JPS6091631A JP19831083A JP19831083A JPS6091631A JP S6091631 A JPS6091631 A JP S6091631A JP 19831083 A JP19831083 A JP 19831083A JP 19831083 A JP19831083 A JP 19831083A JP S6091631 A JPS6091631 A JP S6091631A
Authority
JP
Japan
Prior art keywords
gas
plasma
semiconductor substrate
film
contact hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19831083A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0580815B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Takeuchi
寛 竹内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP19831083A priority Critical patent/JPS6091631A/ja
Publication of JPS6091631A publication Critical patent/JPS6091631A/ja
Publication of JPH0580815B2 publication Critical patent/JPH0580815B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP19831083A 1983-10-25 1983-10-25 半導体装置の製造方法 Granted JPS6091631A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19831083A JPS6091631A (ja) 1983-10-25 1983-10-25 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19831083A JPS6091631A (ja) 1983-10-25 1983-10-25 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6091631A true JPS6091631A (ja) 1985-05-23
JPH0580815B2 JPH0580815B2 (enrdf_load_stackoverflow) 1993-11-10

Family

ID=16388999

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19831083A Granted JPS6091631A (ja) 1983-10-25 1983-10-25 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6091631A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0376220A (ja) * 1989-08-18 1991-04-02 Fujitsu Ltd 化学気相成長装置及び化学気相成長法
JPH06108252A (ja) * 1992-09-16 1994-04-19 Internatl Business Mach Corp <Ibm> 選択的な金の低温化学蒸着
US6013575A (en) * 1995-07-07 2000-01-11 Kabushiki Kaisha Toshiba Method of selectively depositing a metal film

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248468A (en) * 1975-10-15 1977-04-18 Nec Home Electronics Ltd Process for production of semiconductor device
JPS5776833A (en) * 1980-09-04 1982-05-14 Applied Materials Inc Heat resistant metal depositing method and product thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5248468A (en) * 1975-10-15 1977-04-18 Nec Home Electronics Ltd Process for production of semiconductor device
JPS5776833A (en) * 1980-09-04 1982-05-14 Applied Materials Inc Heat resistant metal depositing method and product thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0376220A (ja) * 1989-08-18 1991-04-02 Fujitsu Ltd 化学気相成長装置及び化学気相成長法
JPH06108252A (ja) * 1992-09-16 1994-04-19 Internatl Business Mach Corp <Ibm> 選択的な金の低温化学蒸着
US6013575A (en) * 1995-07-07 2000-01-11 Kabushiki Kaisha Toshiba Method of selectively depositing a metal film

Also Published As

Publication number Publication date
JPH0580815B2 (enrdf_load_stackoverflow) 1993-11-10

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