JPS6090900A - 化合物半導体への不純物拡散方法 - Google Patents

化合物半導体への不純物拡散方法

Info

Publication number
JPS6090900A
JPS6090900A JP58201751A JP20175183A JPS6090900A JP S6090900 A JPS6090900 A JP S6090900A JP 58201751 A JP58201751 A JP 58201751A JP 20175183 A JP20175183 A JP 20175183A JP S6090900 A JPS6090900 A JP S6090900A
Authority
JP
Japan
Prior art keywords
compound semiconductor
diffusion
impurity
substrate
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58201751A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0232240B2 (enExample
Inventor
Kazuhisa Takahashi
和久 高橋
Kenji Ikeda
健志 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP58201751A priority Critical patent/JPS6090900A/ja
Publication of JPS6090900A publication Critical patent/JPS6090900A/ja
Publication of JPH0232240B2 publication Critical patent/JPH0232240B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/42—Gallium arsenide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP58201751A 1983-10-25 1983-10-25 化合物半導体への不純物拡散方法 Granted JPS6090900A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58201751A JPS6090900A (ja) 1983-10-25 1983-10-25 化合物半導体への不純物拡散方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58201751A JPS6090900A (ja) 1983-10-25 1983-10-25 化合物半導体への不純物拡散方法

Publications (2)

Publication Number Publication Date
JPS6090900A true JPS6090900A (ja) 1985-05-22
JPH0232240B2 JPH0232240B2 (enExample) 1990-07-19

Family

ID=16446329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58201751A Granted JPS6090900A (ja) 1983-10-25 1983-10-25 化合物半導体への不純物拡散方法

Country Status (1)

Country Link
JP (1) JPS6090900A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01158725A (ja) * 1987-12-15 1989-06-21 Tel Sagami Ltd 熱処理装置
JPH02241030A (ja) * 1989-03-15 1990-09-25 Hikari Keisoku Gijutsu Kaihatsu Kk 亜鉛拡散方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6071596A (ja) * 1983-09-27 1985-04-23 Matsushita Electric Ind Co Ltd 気相成長装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6071596A (ja) * 1983-09-27 1985-04-23 Matsushita Electric Ind Co Ltd 気相成長装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01158725A (ja) * 1987-12-15 1989-06-21 Tel Sagami Ltd 熱処理装置
JPH02241030A (ja) * 1989-03-15 1990-09-25 Hikari Keisoku Gijutsu Kaihatsu Kk 亜鉛拡散方法

Also Published As

Publication number Publication date
JPH0232240B2 (enExample) 1990-07-19

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